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http://dx.doi.org/10.4313/JKEM.2016.29.6.376

Enhancing Solar Cell Properties of Heterojunction Solar Cell in Amorphous Silicon Carbide  

Kim, Hyunsung (School of Information and Communication Engineering, Sungkyunkwan University)
Kim, Sangho (Department of Energy Science, Sungkyunkwan University)
Lee, Youngseok (Department of Energy Science, Sungkyunkwan University)
Jeong, Jun-Hui (Department of Energy Science, Sungkyunkwan University)
Kim, Yongjun (School of Information and Communication Engineering, Sungkyunkwan University)
Dao, Vinh Ai (School of Information and Communication Engineering, Sungkyunkwan University)
Yi, Junsin (School of Information and Communication Engineering, Sungkyunkwan University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.29, no.6, 2016 , pp. 376-379 More about this Journal
Abstract
In this paper, the efficiency improvement of the heterojunction with intrinsic thin layer (HIT) solar cells is obtained by optimization process of p-type a-SiC:H as emitter. The optoelectronic of p-type a-SiC:H layers including the optical band-gap and conductivity under the methane gas content variation is conducted in detail. A significant increase in the Jsc by $1mA/cm^2$ and Voc by 30 mV are attributed to enhanced photon-absorption due to broader band-gap of p-a-SiC:H and reduced band-offsets at p-side interface, respectively of HIT solar cells.
Keywords
Heterojunction solar cell; Wide bandgap; Carbide; Conductivity; Absorption;
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