• Title/Summary/Keyword: BaSrFBr:Eu

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Positron Annihilation Lifetime Study on the Proton-Irradiation BaSrFBr : Eu Film (양전자 소멸 수명 측정에 의한 양성자 조사된 BaSrFBr : Eu 박막 특성)

  • Im, Yu-Suk;Lee, Chong-Yong
    • Korean Journal of Materials Research
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    • v.20 no.6
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    • pp.307-311
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    • 2010
  • Positron annihilation lifetime spectroscopy is applied to BaSrFBr : Eu film which is used for the phosphore layer, and afterwards the reliability and self-consistency of source corrections in the positron lifetime spectroscopy is investigated using a $^{22}Na$ positron emitter covered by thin foils. The positron lifetime showed no significant change through the various proton irradiation energies. It is unusual that the measurements of the defects indicate that most of the defects were likely to have been generated by X-ray radiation. This may have resulted from the Bragg peaks of the proton characteristics. The Bragg peak does not affect the defect signals enough to distinguish the lifetimes and intensities in a material that is includes multi-grains. The lifetime ($\tau_1$) associated with positron annihilations in the Ba, Br, and Eu of the sample was about 250 ps, and due to the annihilations at F-centers or defects from the irradiated protons in sample, the lifetime ($\tau_2$) was about 500 ps.

Defect Analysis of Phospher (Ba, Sr) FBr : Eu by X-Ray Irradiation (X선 조사에 의해 (Ba, Sr) FBr : Eu 형광 물질에 생성되는 결함 특성)

  • Shin, Jung-Ki;Lee, Chong-Yong;Bae, Seok-Hwan;Kim, Jae-Hong;Kwon, Jun-Hyun
    • Korean Journal of Materials Research
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    • v.18 no.8
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    • pp.427-431
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    • 2008
  • The mechanical property of a phosphore layer was investigated by measuring the resolution (LP/mm) and by positron annihilation spectroscopy and SEM. Image plate samples containing the phosphore layer were irradiated by X-rays in a hospital numerous times over a course of several years. The LP/mm values of a (Ba,Sr)FBr : Eu image plate irradiated by X-rays varied between 2.2 and 2.0 over a period of four years. Coincidence Doppler Broadening (CDB) positron annihilation spectroscopy was used to analyze defect structures. The S parameters of the samples from hospital use varied from 0.6219 to 0.6232. There was a positive relationship between the time of exposure to the X-rays and the S parameters. Most of the defects were found to have been generated by X-rays.

The Characterization of Proton Irradiated BaSrFBr:Eu Film by the Coincidence Doppler Broadening Positron Annihilation Spectroscopy (동시계수 양전자 소멸 측정에 의한 양성자 조사된 BaSrFBr:Eu 박막 특성)

  • Kim, J.H.;Nagai, Y.;Lee, C.Y.
    • Journal of the Korean Vacuum Society
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    • v.18 no.6
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    • pp.447-452
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    • 2009
  • Enhance signal-to-noise ratio, Coincidence Doppler Broadening positron method has been applied to study of characteristics of BaSrFBr:Eu film sample. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The films were exposed by 0, 3, 5, and 7.5 MeV proton beams ranging from 0 to $10^{13}$ ptls. The S-parameter values were increased as increasing the exposed time and the energies, that indicated the defects generate more.

동시계수 도플러 방법과 양전자 수명 분광법에 의한 BaSrFBr:Eu의 결함 연구

  • Kim, Ju-Heung;Lee, Jong-Yong;Bae, Seok-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.259-259
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    • 2010
  • 본 연구는 양전자 소멸 측정 분광법을 통하여 BaSrFBr:Eu 형광물질의 결함 농도 분석을 시도하였다. LABO를 이용한 동시계수 도플러 방법과 Fast - Slow - Coincidence 시스템으로 구성한 양전자 수명 분광법을 통하여 에너지의 변화에 따른 양성자 조사에 의한 시료 결함에 따른 동시 계수 도플러법과 양전자 수명의 변화를 측정 하였으며, SRIM 시뮬레이션을 통한 에너지에 따른 양성자 투과 깊이의 변화를 연구하였다.

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Positron Annihilation Study of Vacancy Type Defects in Ti, Si, and BaSrFBr:Eu

  • Lee, Chong Yong
    • Applied Science and Convergence Technology
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    • v.25 no.5
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    • pp.85-87
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    • 2016
  • Coincidence Doppler broadening and positron lifetime methods in positron annihilation spectroscopy has been used to analyze defect structures in metal, semiconductor and polycrystal, respectively. The S parameter and the lifetime (${\tau}$) value show that the defects were strongly related with vacancies. A positive relationship existed between the scanning electron microscope (SEM) images and the positron annihilation spectroscopy (PAS). According to the SEM images and PAS results, measurements of the defects with PAS indicate that it was more affected by the defect than the purity.

양전자 소멸 측정법에 의한 형광물질의 결함 연구

  • Lee, Jong-Yong;Gwon, Jun-Hyeon;Bae, Seok-Hwan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.11a
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    • pp.45.1-45.1
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    • 2009
  • 본 연구에서는 BaSrFBr:Eu 형광물질의 결함 농도 분석을 시도하였다. 또한 동시 계수 방법과 Fast -Slow - Coincidence 시스템으로 구성한 양전자 수명 측정법을 통하여 에너지의 변화에 따른 양성자 조사에 의한 시료 결함에 따른 동시 계수 도플러법과 양전자 수명의 변화를 측정 하였으며, SRIM 시뮬레이션을 통한 에너지에 따른 양성자 투과 깊이의 변화를 연구하였다.

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