• 한국재료학회지
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• 제21권9호
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• pp.509-514
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• 2011

In this study, optical emission spectroscopy was used to monitor the plasma produced during the RF magnetron sputtering of a $BaTiO_3$ target. The intensities of chemical species were measured by real time monitoring with various discharge parameters such as RF power, pressure, and discharge gas. The emission lines of elemental and ionized species from $BaTiO_3$ and Ti targets were analyzed to evaluate the film composition and the optimized growth conditions for $BaTiO_3$ films. The emissions from Ar(I, II), Ba(I, II) and Ti(I) were found during sputtering of the $BaTiO_3$ target in Ar atmosphere. With increasing RF power, all the line intensities increased because the electron density increased with increasing RF power. When the Ar pressure increased, the Ba(II) and Ti(I) line intensity increased, but the $Ar^+$ line intensity decreased with increasing pressure. This result shows that high pressure is of greater benefit for the ionization of Ba than for that of Ar. Oxygen depressed the intensity of the plasma more than Ar did. When the Ar/$O_2$ ratio decreased, the intensity of Ba decreased more sharply than that of Ti. This result indicates that the plasma composition strongly depends on the discharge gas atmosphere. When the oxygen increased, the Ba/Ti ratio and the thickness of the films decreased. The emission spectra showed consistent variation with applied power to the Ti target during co-sputtering of the $BaTiO_3$ and Ti targets. The co-sputtered films showed a Ba/Ti ratio of 1.05 to 0.73 with applied power to the Ti target. The films with different Ba/Ti ratios showed changes in grain size. Ti excess films annealed at $600^{\circ}C$ did not show the second phase such as $BaTi_2O_5$ and $TiO_2$.

• 한국응용과학기술학회지
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• 제24권3호
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• pp.246-252
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• 2007

$BaTiO_3$ powders were prepared by sol-gel method from different concentration of KOH aqueous solution and Ba/Ti molar ratio. Particle shape, size and crystal structure of prepared $BaTiO_3$ powders were analyzed by SEM, XRD, and FT-IR. As the result of KOH concentration changing, spherical particles were obtained by condition more than 3 M and particle size decreased as concentration increasing. Different appearance showed between dried and sintered powders against changing of Ba/Ti molar ratio. In case of dried powders, the crystallinity decreased as molar ratio increasing. On the other hand, increased as molar ratio increasing in case of sintered powders.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1493-1494
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• 1998

We have investigated the influence of Ti/Ba mole ratio in the characteristics of the modified $BaTiO_3$ systems with Ca addition. The specimens were fabricated with variations in Ti/Ba mole ratio between 0.995 and 1.01, and sintered in the temperature range between $1325^{\circ}C$ and $1375^{\circ}C$. When Ti/Ba mole ratio was 1.005 and sintering temperature was $1350^{\circ}C$, the breakdown voltage shows 260[V /mm].

• Korean Chemical Engineering Research
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• 제45권5호
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• pp.448-454
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• 2007

미세 $BaTiO_3$ 분말의 합성을 위해 함수 티타니아와 수산화바륨을 원료로 수열합성 실험을 수행하여, 반응시간, 온도, 농도 변화에 따른 전화율, 결정구조 및 생성 분말의 물성을 조사하였다. 전화율에 미치는 영향은 시간 < 온도 < 농도 순이었으며, 2.0 M의 원료를 $180^{\circ}C$에서 2 h 수열합성 시킬 때 최대 전화율을 99.5%를 얻을 수 있었다. 낮은 농도(0.25 M)에서는 고온에서도 미반응 $BaCO_3$와 미반응 $TiO_2$ 생성을 피할 수 없었으며, 이 미반응 물질들은 고온에서 $BaTi_2O_5$를 생성시켜 불순물로 존재하였다. 농도를 높일수록 합성 $BaTiO_3$ 분말의 크기는 작아졌으며, 분말의 Ba/Ti 비도 1에 접근하였다. 2.0M 이상의 농도에서는 $180^{\circ}C$, 2 h 반응에서 Ba/Ti 비는 $1{\pm}0.005$ 이였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.44-48
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• 1996

We have investigated the influence of Ti/Ba mole ratio in the characteristics of the modified BaTiO$_3$systems with Ca addition. The specimens were fabricated with variations in Ti/Ba mole ratio between 0.995 and 1.01, and sintered in the temperature range between 13$25^{\circ}C$ and 1375$^{\circ}C$. The room temperature resistivity, PTCR effect and ac complex impedence characteristics were studied. It shows that the room temperature resistivity was increased with the increasing Ti/Ba mole ratio and sintering temperature. It was suggested that this result was mainly attributed to its grain-boundary properties

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.609-612
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• 2002

In this study, the electrical properties were investigated for the deposited Ba,Sr)(Nb,Ti)$O_3$[BSNT] thin films grown on $Pt/TiO_2/SiO_2/Si$ substrate by RF sputtering method. The structural properties of the BSNT thin films affected by the $Ar/O_2$ rates were investigated. In the case of the BSNT thin films deposited with condition of 60/40$(Ar/O_2)$ ratio, the $BaTiO_3$, $SrTiO_3$ and $BaNbO_3$ phases were showed. The composition ratio of Nb and Ti in the BSNT thin films were nearly equivalent. Also, in the BSNT thin films deposited with condition of 60/40 and 80/20$(Ar/O_2)$ ratios, the composition of Ba, Sr, Nb and Ti were relatively uniform. The Ba, Sr, Nb and Ti in the BSTN thin films were not diffused into the Pt layer.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.317-321
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• 2003

In this study, the structural properties were Investigated for the deposited (Ba,Sr)(Nb,Ti)O$_3$[BSNT] thin films grown on Pt/TiO$_2$/SiO$_2$/Si substrate by RF sputtering method. The structural properties of the BSNT thin films affected by the Ar/02 ratios were Investigated. In the case of the BSNT thin films deposited with condition of 60/40(Ar/O$_2$) ratio, the BaTiO$_3$, SrTiO$_3$ and BaNbO$_3$ phases were showed. The composition ratio of Nb and Ti in the BSNT thin films were nearly equivalent. Also, in the BSNT thin films deposited with condition of 60/40 and 80/20(Ar/O$_2$) ratios, the composition of Ba, Sr, Nb and Ti were relatively uniform. The Ba, Sr, Nb and Ti in the BSTN thin films were not diffused into the Pt layer.

• 한국전기전자재료학회논문지
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• 제16권3호
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• pp.195-201
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• 2003

The (Ba,Bi,Sr)TiO$_3$[BBST] thin films were fabricated on Pt/Ti/SiO$_2$ /Si substrate by RF sputtering method. The effects of Ar/O$_2$ ratio on the structural and dielectric properties of BBST thin films were investigated. Increasing the Ar/O$_2$ ratio, the intensity of BaBi$_4$Ti$_4$O$_{15}$ and Bi$_4$Ti$_3$O$_{12}$ peaks were increased but (Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ peak was decreased. In the BBST thin films deposited with condition of Ar/O$_2$(90/10) ratio, the composition ratio of the Ba, Bi and Sr atoms were 0.35, 0.25 and 0.4 respectively. The Bi and Ti atoms were diffused into the Pt layers. Increasing the Ar/O$_2$ ratio, the dielectric constant of the BBST thin films were increased but the dielectric loss of the BBST thin films were decreased. The dielectric constant and dielectric loss of the BBST deposited at 90/10 of Ar/O$_2$ ratio were 319 and 2.2%. respectively . Increasing the applied voltage, the capacitance of the BBST thin films were decreased.reased.

• 한국재료학회지
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• 제1권1호
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• pp.37-45
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• 1991

$BaTiO_3$세라믹에서 미세구조를 조절하기 위하여 Ba/Ti비 변화에 따른 소결거동 및 비정상 입자성장에 대하여 연구하였다. 본 연구에서 사용한 $BaTiO_3$분말은 $BaCO_3$와 $TiO_2$를 이용하여 일반적인 고상반응법으로 제조하였다. Ba/Ti비가 감소할수록(과잉 $TiO_2$가 증가할수록)소결 시작온도가 낮아졌으며 치밀화가 증진되었다. 이것은 과잉 $TiO_2$양이 증가할수록 하소된 분말의 크기가 감소되었기 때문으로 판단되며, 공융액상 형성으로 인한 액상소결에 의한 것이 아님을 알 수 있었다. 또한 과잉 $TiO_2$양이 증가할수록 입자성장이 강력하게 억제되었으며, 이는 Ti-rich 이차상이 입자성장을 억제시킴을 의미한다. 따라서 이러한 이차상의 불균일한 분포로 인하여 비정상 입자성장이 일어나는 것으로 판단되었다.

• 한국세라믹학회지
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• 제35권12호
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• pp.1274-1279
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• 1998

The glass forming ability of the PbO-B2O3-TiO3-BaO system was investigated in relation to transitieon tem-peratures and the atomic ratio between constituents. Glass forming tendency was improved as the tem-peratures and the atomic ratio between constituents. Glass forming tendency was improved as the tem-perature differences between liquidus temperature and crystallization(or glass transition) temperature de-creased and the temperature difference between crystallization and glass transition temperature increases. The atomic ratio could be used as a criterion to deign glass systems. The interposition of B and Ba atoms between Pb and Ti atoms was one of important factors in glass formation.