• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.210.1-210.1
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• 2014

The hexagonal boron nitride (h-BN) sheet, a 2D material like graphene sheet, is comprised of boron and nitrogen atoms. Similar to graphene, h-BN sheet has attractive mechanical properties while it has a wide band gap unlike graphene. Recently, many experimental groups studied the growth of single BN layer by chemical vapor deposition (CVD) method on the copper substrate. To study the initial stage of h-BN growth on the copper surface, we have performed density functional theory calculations. We investigate several adsorption sites of a boron or nitride atom on the Cu surfaces. Then, by increasing the number of adsorbed B and N atoms, we study formation behaviors of the BN flakes on the surface. Several types of BN flakes atoms such as triangular, linear, and hexagonal shapes are considered on the copper surface. We find that the formation of the BN flake in triangular shape is most favorable on the surface. On the basis of the theoretical results, we discuss the growth mechanism of h-BN layer on the copper surfaces in terms of its shapes in the initial stage of growth.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.185.2-185.2
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• 2014

We have studied the atomic and electronic structure of graphene nanoribbons (GNRs) on a hexagonal boron nitride (h-BN) sheet with intercalated atoms using first-principles calculations. The h-BN sheet is an insulator with the band gap about 6 eV and then it may a good candidate as a supporting dielectric substrate for graphene-based nanodevices. Especially, the h-BN sheet has the similar bond structure as graphene with a slightly longer lattice constant. For the computation, we use the Vienna ab initio simulation package (VASP). The generalized gradient approximation (GGA) in the form of the PBE-type parameterization is employed. The ions are described via the projector augmented wave potentials, and the cutoff energy for the plane-wave basis is set to 400 eV. To include weak van der Waals (vdW) interactions, we adopt the Grimme's DFT-D2 vdW correction based on a semi-empirical GGA-type theory. Our calculations reveal that the localized states appear at the zigzag edge of the GNR on the h-BN sheet due to the flat band of the zigzag edge at the Fermi level and the localized states rapidly decay into the bulk. The open-edged graphene with a large corrugation allows some space between graphene and h-BN sheet. Therefore, atoms or molecules can be intercalated between them. We have considered various types of atoms for intercalation. The atoms are initially placed at the edge of the GNR or inserted in between GNR and h-BN sheet to find the effect of intercalated atoms on the atomic and electronic structure of graphene. We find that the impurity atoms at the edge of GNR are more stable than in between GNR and h-BN sheet for all cases considered. The nickel atom has the lowest energy difference of ~0.2 eV, which means that it is relatively easy to intercalate the Ni atom in this structure. Finally, the magnetic properties of intercalated atoms between GNR and h-BN sheet are investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.252.1-252.1
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• 2013

Hexagonal boron nitride (h-BN) is a two dimensional material which has high band-gap, flatness and inert properties. This properties are used various applications such as dielectric for electronic device, protective coating and ultra violet emitter so on. 1) In this report, we were growing h-BN sheet directly on sapphire 2"wafer. Ammonia borane (H3BNH3) and nickel were deposited on sapphire wafer by evaporate method. We used nickel film as a sub catalyst to make h-BN sheet growth. 2) During annealing process, ammonia borane moved to sapphire surface through the nickel grain boundary. 3) Synthesized h-BN sheet was confirmed by raman spectroscopy (FWHM: ~30cm-1) and layered structure was defined by cross TEM (~10 layer). Also we controlled number of layer by using of different nickel and ammonia borane thickness. This nickel film supported h-BN growth method may propose fully and directly growing on sapphire. And using deposited ammonia borane and nickel films is scalable and controllable the thickness for h-BN layer number controlling.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.226-226
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• 2010

Boron Nitride (BN) doped GeSbTe films were grown by the ion beam sputtering deposition (IBSD). The in-situ sheet resistance data and the x-ray diffraction patterns showed the crystallization is suppressed due to the BN incorporation. The phase change speed in BN doped GeSbTe films were investigated using the static tester equipped with nanosecond pulsed laser. The phase change speed for BN doped GST films become faster than the corresponding values for an undoped GST film. The Johnson-Mehl-Avrami(JMA) plot and Avrami coefficient for laser crystallization showed that the change in growth mode during the laser crystallization is a most important factor for the phase change speed in the BN doped GST films. The JMA results and the atomic force microscopy (AFM) images indicate that the origin of the change in the crystalline growth mode is due to an increase in the number of initial nucleation sites which is produced by the incorporated BN. In addition, the retension properties for the laser writing/erasing are remarkably improved in BN doped GeSbTe films owing to the stability of the incorporated BN.

• Journal of the Korean Chemical Society
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• v.61 no.1
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• pp.16-24
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• 2017

The adsorption of various atmospheric harmful gases ($CO_x$, $NO_x$, $SO_x$) on graphene-like boron nitride(BN) and aluminum nitride(AlN) sheets was theoretically investigated using density functional theory (DFT) and MP2 methods. The structures were fully optimized at the $B3LYP/6-31G^{**}$ and $CAM-B3LYP/6-31G^{**}$ levels of theory and confirmed to be a local minimum by the calculation of the harmonic vibrational frequencies. The MP2 single-point binding energies were computed at the $CAM-B3LYP/6-31G^{**}$ optimized geometries. Also the zero-point vibrational energy (ZPVE) and 50%-basis set superposition error (BSSE) corrections were included. The adsorptions of gases on the BN sheet were predicted to be a physisorption process and the adsorptions of gases on the AlN sheet were predicted to be a physisorption process for $CO_x$ and $NO_x$ but to be a chemisorption process for $SO_x$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.116-121
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• 2019

Hexagonal boron nitride particles (s-hBN) modified with 3-aminopropyl triethoxysilane (APTES) were used for the preparation of silicone composite materials. The microstructure of the composite materials was observed, and the thermal conduction and mechanical characteristics of the composite sheets were studied based on the compositions and microstructures. When a small amount of s-hBN particles was used, the thermal conductivity of the composite improved as a whole, and the tensile strength of the sheet also increased. The thermal conductivity and tensile strength of the composite in which a small amount of carbon fiber was added along with s-hBN were further improved. However, the use of carbon nanotubes with structural characteristics similar to those of carbon fiber resulted in lower thermal conductivity and tensile strength. Elastic silicone composites exhibiting 2.5 W/mK of thermal conductivity and a low hardness are expected to be used as thermally conductive interfacial sheet materials.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.95-99
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• 2018

High thermal conductivity films with electrically insulating properties have a great potential for the effective heat transfer as substrate and thermal interface materials in high density and high power electronic packages. There have been lots of studies to achieve high thermal conductivity composites using high thermal conductivity fillers such alumina, aluminum nitride, boron nitride, CNT and graphene, recently. Among them, hexagonal-boron nitride (h-BN) nano-sheet is a promising candidate for high thermal conductivity with electrically insulating filler material. This work presents an enhanced heat transfer properties of ceramic/polymer composite films using h-BN nano-sheets and PVA polymer resins. The h-BN nano-sheets were prepared by a mechanical exfoliation of h-BN flakes using organic media and subsequent ultrasonic treatment. High thermal conductivities over $2.8W/m{\cdot}K$ for transverse and $10W/m{\cdot}K$ for in-plane direction of the cast films were achieved for casted h-BN/PVA composite films. Further improvement of thermal conductivity up to $13.5W/m{\cdot}K$ at in-plane mode was achieved by applying uniaxial compression at the temperature above glass transition of PVA to enhance the alignment of the h-BN nano-sheets.

• 전기의세계
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• v.30 no.4
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• pp.227-230
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• 1981

The variation of sheet resistance and the reduction of masking oxide thickness with the flow rate of nitrogen gas has been measured in Boron predeposition process with Planar Diffusion source, BN-975. At 900.deg. C, the sheet resistance varied as much as 75% when the nitrogen flow rate was changed from 0.4 liters/min to 2.0 liters/min. At 975.deg. C, however, only 12% of sheet resistance variation was observed under the same flow rate change. The reduction of masking oxide thickness at 975.deg. C for a 5 min predeposition was 600 nm when the nitrogen flow rate was 0.4 liters/min. When the flow rate incresased to 1.9 liters/min, however, only 100nm of masking oxide was consumed in a similar predeposition process.

• Journal of Powder Materials
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• v.25 no.2
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• pp.120-125
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• 2018

Boron nitride nanotubes (BNNTs) are receiving great attention because of their unusual material properties, such as high thermal conductivity, mechanical strength, and electrical resistance. However, high-throughput and high-efficiency synthesis of BNNTs has been hindered due to the high boiling point of boron (${\sim}4000^{\circ}C$) and weak interaction between boron and nitrogen. Although, hydrogen-catalyzed plasma synthesis has shown potential for scalable synthesis of BNNTs, the direct use of $H_2$ gas as a precursor material is not strongly recommended, as it is extremely flammable. In the present study, BNNTs have been synthesized using radio-frequency inductively coupled thermal plasma (RF-ITP) catalyzed by solid-state ammonium chloride ($NH_4Cl$), a safe catalyst materials for BNNT synthesis. Similar to BNNTs synthesized from h-BN (hexagonal boron nitride) + $H_2$, successful fabrication of BNNTs synthesized from $h-BN+NH_4Cl$ is confirmed by their sheet-like properties, FE-SEM images, and XRD analysis. In addition, improved dispersion properties in aqueous solution are found in BNNTs synthesized from $h-BN+NH_4Cl$.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.05a
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• pp.302-305
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• 2009

This paper examines the effect of nitride formation on formability for Cu bearing high strength extra low carbon (ELC) steel sheets. For this purpose, we have investigated the effect of addition of aluminium (Al) and boron (B) on texture and precipitation behavior of the ELC steel during continuous annealing. Mechanical properties and microstructures of the ELC steel sheets were analyzed as well using uni-axial tensile test, electron back-scattered diffraction (EBSD) technique and transmission electron microscopy (TEM) following pilot rolling and continuous annealing. It has been found that the addition of Al and B increases the precipitation of AlN and BN. What is more, the scavange of solute nitrogen is effective in increasing the formability of the ELC steels. In addition, the Al and B addition improves the aging property of the ELC steel.