• 제목/요약/키워드: BIAS

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A FACETS Analysis of Rater Characteristics and Rater Bias in Measuring L2 Writing Performance

  • Shin, You-Sun
    • 영어어문교육
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    • 제16권1호
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    • pp.123-142
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    • 2009
  • The present study used multi-faceted Rasch measurement to explore the characteristics and bias patterns of non-native raters when they scored L2 writing tasks. Three raters scored 254 writing tasks written by Korean university students on two topics adapted from the TOEFL Test of Written English (TWE). The written products were assessed using a five-category rating scale (Content, Organization, Language in Use, Grammar, and Mechanics). The raters only showed a difference in severity with regard to rating categories but not in task types. Overall, the raters scored Grammar most harshly and Organization most leniently. The results also indicated several bias patterns of ratings with regard to the rating categories and task types. In rater-task bias interactions, each rater showed recurring bias patterns in their rating between two writing tasks. Analysis of rater-category bias interaction showed that the three raters revealed biased patterns across all the rating categories though they were relatively consistent in their rating. The study has implications for the importance of rater training and task selection in L2 writing assessment.

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광반응 폴리이미드위에 RF bias sputtering 방식으로 증착된 Cr의 접착력에 관한 연구

  • 김선영;김영호;윤종승
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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    • pp.171-177
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    • 2001
  • The adhesion enhancement from inserting a RF bias-sputtered Cr layer between Cu and polyimide (PI) has been studied. The RF bias power applied in this study was ranged from 0 to 400 W. Without the RF bias, the peel strength, which measures the adhesion strength, was nearly o g/mm. As the RF power was increased, the peel strength rose up to ~130 g/mm at 200 W, which remained constant with further increase of the RF bias power. Cross-sectional transmission electron microscopy(TEM) was used to investigate the interfacial reaction between the Cr film and PI substrate during the bias sputtering. The Cr/PI interface without the application of RF dais showed a clean, sharp interface while the RF raised Cr/PI interface had about 10~30 nm thick atomistically mixed interlayer between the metal film and PI substrate. This interlayer appeared to have resulted from the implantation of high energy adatoms during the RF bias sputtering of Cr film. This mixed layer serves as an interlocking layer, which enhances adhesion between the metal and PI layers.

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자기변형 센서 바이어스 자기계의 요크 위상최적설계 (Yoke Topology Optimization of the Bias Magnetic System in a Magnetostrictive Sensor)

  • 김윤영;김우철
    • 대한기계학회논문집A
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    • 제28권7호
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    • pp.923-929
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    • 2004
  • A magnetostrictive sensor is a sensor measuring elastic waves. Because of its unique non-contact measurement feature, the sensor receives more attentions in recent years. These sensors have been mainly used to measure longitudinal and torsional waves in ferromagnetic waveguides, but there increases an interest in using the sensor for flexural wave measurement. Since the performance of the sensor is strongly influenced by the applied bias magnetic field distribution, the design of the bias magnetic system providing the desired magnetic field is critical. The motivation of this investigation is to design a bias magnetic system consisting of electromagnets and yokes and the specific objective is to formulate the design problem as a bias yoke topology optimization. For the formulation, we employ linear magnetic behavior and examine the optimized results for electromagnets located at various locations. After completing the design optimization, we fabricate the prototype of the proposed bias magnetic system, and test its performance through flexural wave measurements.

A Novel Compensator for Eliminating DC Magnetizing Current Bias in Hybrid Modulated Dual Active Bridge Converters

  • Yao, Yunpeng;Xu, Shen;Sun, Weifeng;Lu, Shengli
    • Journal of Power Electronics
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    • 제16권5호
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    • pp.1650-1660
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    • 2016
  • This paper proposes a compensator to eliminate the DC bias of inductor current. This method utilizes an average-current sensing technique to detect the DC bias of inductor current. A small signal model of the DC bias compensation loop is derived. It is shown that the DC bias has a one-pole relationship with the duty cycle of the left side leading lag. By considering the pole produced by the dual active bridge (DAB) converter and the pole produced by the average-current sensing module, a one-pole-one-zero digital compensation method is given. By using this method, the DC bias is eliminated, and the stability of the compensation loop is ensured. The performance of the proposed compensator is verified with a 1.2-kW DAB converter prototype.

RF 바이어스 조건하에서 증착된 a-C:H 박막을 이용한 네마틱 액정의 배향 효과 (Alignment Effects for Nematic Liquid Crystal using a-C:H Thin Films Deposited at Rf Bias Condition)

  • 황정연;박창준;서대식;안한진;백홍구
    • 한국전기전자재료학회논문지
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    • 제17권5호
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    • pp.526-529
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    • 2004
  • The nematic liquid crysta](NLC) aligning capabilities using a-C:H thin film deposited at the three kinds of rf bias condition were investigated. A high pretilt angle of NLC on low substrate rf bias applied a-C:H thin films was observed and the low pretilt angle of the NLC on high substrate rf bias applied a-C:H thin films was observed. Consequently, the high NLC pretilt angle and the good aligning capabilities of LC alignment by the IB alignment method on the a-C:H thin film deposited at 1 W rf bias condition can be achieved. It is considered that pretilt angle of the NLC may be attributed to substrate rf bias condition and IB energy time. Therefore, LC alignment is affected by topographical structure forming strong IB energy.

Effect of Interface Roughness on Exchange Bias of an Uncompensated Interface: Monte Carlo Simulation

  • Li, Ying;Moon, Jung-Hwan;Lee, Kyung-Jin
    • Journal of Magnetics
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    • 제16권4호
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    • pp.323-327
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    • 2011
  • By means of Monte Carlo simulation, we investigate the effects of interface roughness and temperature on the exchange bias and coercivity in ferromagnetic (FM)/antiferromagnetic (AFM) bilayers. Both exchange bias and coercivity are strongly dependent on interface roughness. For a perfect uncompensated interface a domain wall is formed in the AFM system during FM reversal, which results in a very small exchange bias. However, a finite interface roughness leads to a finite value of the exchange bias due to the existence of pinned spins at the AFM surface adjacent to the mixed interface. It is observed that the exchange bias decreases with increasing temperature, consistent with the experimental results. It is also observed that a bump in coercivity occurs around the blocking temperature.

Noun versus Verb Bias Revisited

  • ChangSong, You-kyung;Pae, So-Yeong
    • 음성과학
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    • 제10권1호
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    • pp.131-141
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    • 2003
  • Recently, researchers have been debating whether Korean children exhibit a verb bias or not. Since verbs are perceptually and structurally more salient in Korean language, it has been questioned whether these differences in the Korean make a difference in the pattern of noun and verb acquisition of Korean children. Although language structures may vary between Korean and English, universal cognitive constraints play an important role in early vocabulary acquisition. Several recent studies have examined the noun and verb acquisition of Korean children. However, their conclusions regarding the noun versus verb bias have still been inconclusive. In this paper, previous studies investigating Korean children's noun versus verb bias are examined. Methodological issues are mentioned and results were reinterpreted as favoring the noun bias for one-year-old Korean children.

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P-채널 다결정 실리콘 박막 트랜지스터의 Alternate Bias 스트레스 효과 (Effect of Alternate Bias Stress on p-channel poly-Si TFT`s)

  • 김영호;조봉희;강동헌;길상근;임석범;임동준
    • 한국전기전자재료학회논문지
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    • 제14권11호
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    • pp.869-873
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    • 2001
  • The effects of alternate bias stress on p-channel poly-Si TFT\`s has been systematically investigated. We alternately applied positive and negative bias stress on p-channel poly-Si TFT\`s, device Performance(V$\_$th/, g$\_$m/, leakage current, S-slope) are alternately appeared to be increasing and decreasing. It has been shown that device performance degrade under the negative bias stress while improve under the positive bias stress. This effects have been related to the hot carrier injection into the gate oxide rather than the generation of defect states within the poly-Si/SiO$_2$ interface under alternate bias stress.

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Exchange Bias Modifications in NiFe/FeMn/NiFe Trilayer by a Nonmagnetic Interlayer

  • Yoon, S.M.;Sankaranarayanan V.K.;Kim, C.O.;Kim, C.G.
    • Journal of Magnetics
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    • 제10권3호
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    • pp.99-102
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    • 2005
  • Modification in exchange bias of a NiFe/FeMn/NiFe trilayer, on introduction of a nonmagnetic Al layer at the top FeMn/NiFe interface, is investigated in multilayers prepared by rf magnetron sputtering. The introduction of Al layer leads to vanishing of bias of the top NiFe layer. But the bias for the bottom NiFe layer increases steadily with increasing Al layer thickness and attains bias (230 Oe) which is greater than that of the trilayer without the Al layer (150 Oe). When the top NiFe layer thickness is varied, exchange bias has highest value at 12 nm thickness for 1 nm thicknes of Al layer. Ion beam etching of the top NiFe layer also leads to an enhancement in bias for the bottom NiFe layer.

다중 바이어스 추출 기법을 이용한 HEMT 소신호 파라미터 추출 (Parameter Extraction of HEMT Small-Signal Equivalent Circuits Using Multi-Bias Extraction Technique)

  • 강보술;전만영;정윤하
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 추계종합학술대회 논문집(1)
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    • pp.353-356
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    • 2000
  • Multi-bias parameter extraction technique for HEMT small signa] equivalent circuits is presented in this paper. The technique in this paper uses S-parameters measured at various bias points in the active region to construct one optimization problem, of which the vector of unknowns contains only a set of bias-independent elements. Tests are peformed on measured S-parameters of a pHEMT at 30 bias points. Results indicate that the calculated S-parameters is similar to the measured data.

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