• Korean Chemical Engineering Research
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• 제58권3호
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• pp.486-492
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• 2020

가시광 LED 빛에 반응하는 페로브스이트형 bismuth ferrite (BFO) 광촉매 제조방법과 가시광 광촉매 반응 특성을 조사하였다. BFO는 졸-겔법에 따라 제조하였다. 제조된 BFO는 주로 BiFeO₃ 구조로 이루어져 있으며 Bi₂₄Fe₂O₃₉ 구조도 포함한 나노 크기의 결정을 이루고 있었다. BFO 나노 결정은 약 600 nm까지 자외선과 가시광선을 흡수하는 것을 UV-visible 확산 반사 스펙트럼으로부터 확인하였다. 확산 반사 스펙트럼으로부터 구한 BFO의 밴드갭은 약 2.2 eV로 나타났다. 포름알데히드는 585 nm와 613 nm 파장의 가시광 LED 램프의 빛과 BFO 광촉매와의 광반응에 의하여 분해되어 제거되었다. BFO의 가시광 LED 빛에서 광촉매 활성은 BFO의 좁은 밴드갭에서 기인하는 것으로 보인다.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.895-899
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• 2011

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.33.1-33.1
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• 2010

BiFeO3 (BFO)는 강자성과 유전체 특성을 모두 구현할 수 있는 재료로서 연구가 활발히 진행되고 있다. BFO 박막을 제조하는 방법에는 sputtering, chemical solution deposition, pulsed laser deposition methods 등이 알려져 있으나, 이러한 방법들은 근본적으로 고 진공을 사용하거나, 고온에서의 열처리, 낮은 성막 속도 등의 문제점이 있어, 상온에서 비교적 쉽게 박막을 제조할 수 있는 Aerosol deposition에 관한 관심이 증가하고 있다. 본 연구에서는 BFO의 강자성, 강유전 특성을 향상시키기 위해 Ba(Cu1/3Nb2/3)O3 (BCN)를 첨가한 Ba(Cu1/3Nb2/3)O3 (BFO-BCN) 복합재료를 합성하였다. 합성한 마이크론 크기의 입자를 사용하여 나노 결정립 크기의 Ba(Cu1/3Nb2/3)O3 (BFO-BCN) 박막을 상온에서 진공 분말 분사 공정(Aerosol-Deposition)을 이용하여 제조하고, 강자성 및 강유전성 특성을 평가하였다. Aerosol deposition방법으로 제조된 BFO-BCN박막은 BFO박막에 비해 우수한 강자성과 강유전 특성 나타내었다.

• 한국진공학회지
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• 제19권1호
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• pp.52-57
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• 2010

$BiFeO_3(BFO)/Pb(Zr_{0.52}Ti_{0.48})O_3$(PZT) bilayer와 multilayer의 다층구조를 만들어 전기적 특성을 측정하여 같은 두께의 BFO 단층박막과 비교해 보았다. BFO와 PZT 용액을 이용하였으며 chemical solution deposition 방법으로 Pt/Ti/$SiO_2$/Si(100) 기판위에 각 박막을 증착하였다. X-ray diffraction 분석을 통해 모든 박막이 다배향(multi-orientation) 페로브스카이트 (perovskite) 구조를 가졌음을 확인하였다. BFO/PZT Bilayer와 multilayer 박막들은 BFO 단층박막의 비해 누설전류 값이 500 kV/cm에서 약 4, 5차수 정도 감소했으며, 이로 인해 BFO/PZT 다층박막의 강유전체 특성이 크게 향상되었다. BFO/PZT multilayer 다층구조 박막의 경우 안정된 이력곡선(hysteresis loop)을 나타냈으며, 잔류 분극(remanent polarization)의 값은 $44.3{\mu}C/cm^2$이었으며, 항전계($2E_c$) 값은 681.4 kV/cm였다.

• 한국재료학회지
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• 제19권5호
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• pp.253-258
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• 2009

Mn-substituted $BiFeO_3$(BFO) thin films were prepared by r.f. magnetron sputtering under an Ar/$O_2$ mixture of various deposition pressures at room temperature. The effects of the deposition pressure and annealing temperature on the crystallization and electrical properties of BFO films were investigated. X-ray diffraction patterns revealed that BFO films were crystallized for films annealed above $500^{\circ}C$. BFO films annealed at $550^{\circ}C$ for 5 min in $N_2$ atmosphere exhibited the crystallized perovskite phase. The (Fe+Mn)/Bi ratio decreased with an increase in the deposition pressure due to the difference of sputtering yield. The grain size and surface roughness of films increased with an increase in the deposition pressure. The dielectric constant of BFO films prepared at various conditions shows $127{\sim}187$ at 1 kHz. The leakage current density of BFO films annealed at $500^{\circ}C$ was approximately two orders of magnitude lower than that of $550^{\circ}C$. The leakage current density of the BFO films deposited at $10{\sim}30\;m$ Torr was about $5{\times}10^{-6}{\sim}3{\times}10^{-2}A/cm^2$ at 100 kV/cm. Due to the high leakage current, saturated P-E curves were not obtained in BFO films. BFO film annealed at $500^{\circ}C$ exhibited remnant polarization(2Pr) of $26.4{\mu}C/cm^2$ at 470 kV/cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.197-197
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• 2010

Pb(Zr,Ti)O3/BiFeO3/(PZT/BFO) multilayer thin films were coated on Pt/Ti/SiO2/Si substrates by chemical solution deposition. With increasing the annealing temperature, the dielectric and leakage current density properties of multilayered PZT/BFO/PZT thin films were improved. The current density of the PZT/BFO/PZT filmannealing at $600^{\circ}C$ was about 189.39(x10-9A/cm2) at 10V. The relative dielectric constant and the dielectric loss of the PZT/BFO/PZT thin film annealing at $600^{\circ}C$ were about 318 and 0.161%, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.139.1-139.1
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• 2016

Multiferroic materials are of great interest because of its potential applications in the design of devices combining magnetic, electronic and optical functionalities. Among various multiferroic materials, $BiFeO_3$(BFO) is known to be one of the intensively focused mainly due to the possibility of multiferroism at device working temperature (> $200^{\circ}C$). However, leakage current and weak polarization resulting from oxygen deficiency and crystalline defect should be resolved. Furthermore the magnetic ordering of pure BFO mainly prefers to have antiferromagnetic coupling. Up to now many attempts have been performed to improve the ferromagnetic and the ferroelectric properties of BFO by doping. In this work, we investigated the effects of Ni substitution on the multiferroism of bulk BFO. Four BFO samples (a pure BFO and three Ni-doped BFO's; $BiFe_{0.99}Ni_{0.01}O_3$, $BiFe_{0.98}Ni_{0.02}O_3$ and $BiFe_{0.97}Ni_{0.03}O_3$) were synthesized by the standard solid-state reaction and rapid sintering technique. The XRD results reveal that Ni atoms are substituted into Fe-sites and give rise to phase transition of cubic to rhombohedal. By using vibrating sample magnetometer and standard ferroelectric tester, the multiferroic properties at room temperature were characterized. We found that the magnetic moment of Ni-doped BFO turned out to be maximized for 3% of Ni dopant.

• 한국재료학회지
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• 제19권11호
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• pp.601-606
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• 2009

$BiFeO_3$ (BFO) thin films were prepared on $Pt/TiO_2/Si$ substrate by r.f. magnetron sputtering. The effects of deposition pressure on electrical properties were investigated using measurement of dielectric properties, leakage current and polarization. When BFO targets were prepared, Fe atoms were substituted with Mn 0.05% to increase electrical resistivity of films. (Fe+Mn)/Bi ratio of BFO thin films increases with increasing partial pressure of $O_2$ gas. The deposited films showed the only BFO phase at 10 mTorr, the coexistence of BFO and $Bi_2O_3$ phase at 30-50 mTorr, and the only $Bi_2O_3$ phase at 70 mTorr. The crystallinity of BFO films was reduced due to the higher Bi contents and the decrease of surface mobility of atoms at high temperature. The porosity and surface roughness of films increased with the increase of the deposition pressure. The films deposited at high pressure showed low dielectric constant and high leakage current. The dielectric constant of films deposited at various deposition pressures was 84${\sim}$153 at 1 kHz. The leakage current density of the films deposited at 10${\sim}$70 mTorr was about $7{\times}10.6{\sim}1.5{\times}10.2A/cm^2$ at 100 kV/cm. The leakage current was found to be closely related to the morphology and composition of the BFO films. BFO films showed poor P-E hysteresis loops due to high leakage current.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.245-245
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• 2011

$BiFeO_3$ (BFO)박막에 전위금속 Pb와 Co를 각각 치환환 박막을 chemical solution deposition 방법으로 Pt/Ti/SiO2/Si(100) 기판위에 증착하였다. Bi 자리에 Pb와 Co를 20 at.% 치환하였으며, 치환된 $Bi_{0.8}Pb_{0.2}FeO_3$ (BPFO), $Bi_{0.8}Co_{0.2}FeO_3$ (BCFO) 박막의 구조적, 자기적 특성 변화를 BFO 박막과 비교하여 조사하였다. XRD 패턴을 분석한 결과 BPFO, BCFO 박막들은 모두 rhombohedrally distorted perovskite 구조였으며 불순물인 pyrochlore 상이 약하게 관측되었다. 치환이 이루어진 BPFO, BCFO 박막들의 자기 이력곡선은 안정된 포화곡선을 나타냈으며 BFO의 포화값(5 emu/$cm^3$)에 비해 크게 증가된 55 emu/$cm^3$, 35 emu/$cm^3$의 값을 나타냈다. 또한 보자력장(coercive field, Hc)값도 BFO의 500 Oe보다 크게 증가된 1,200 Oe, 800 Oe의 값을 보였다.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.949-955
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• 2010

Nd and Ti co-doped bismuth ferrite $(Bi_{1-x}Nd_x)(Fe_{1-y}Ti_y)O_3$ (x, y = 0, 0.05, 0.1, 0.2) ceramics and thin films were synthesized through the conventional mixed-oxide process and pulsed laser deposition (PLD), respectively. Nd and Ti co-doping effect was examined with emphasis on how these impurities affect phase formation behavior as there could be the improvement in leakage current problems often associated with multiferroic $BiFeO_3$ (BFO) thin films. The lattice constants of BFO ceramics decreased with Nd doping concentration up to 10mol%, while they further decreased with Nd and Ti co-doping to about 20%. BFO thin films obtained by the PLD process revealed random polycrystalline structure. Similar to bulk BFO ceramic, Nd and Ti co-doping effectively suppressed the formation of unwanted secondary phase and thus stabilized the perovskite phase in BFO thin films.