• Journal of IKEEE
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• v.17 no.3
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• pp.267-274
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• 2013

This paper presents a design of LLC resonant converter IC for LED backlight unit based on PFM/PWM dual-mode feedback. Dual output LLC resonant architecture with a single inductor is proposed, where the master output is controlled by the PFM and slave output is controlled by the PWM. To regulate the master output PFM is used as feedback to control the frequency of the power switch. On the other hand, PWM feedback is used to control the pulse width of the power switch and to regulate the slave output. This chip is fabricated in 0.35um 2P3M BC(Bipolar-CMOS-DMOS) Process and the die area is $2.3mm{\times}2.2mm$. Current consumptions is 26mA from 5V supply.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.4
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• pp.34-42
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• 2012

In this paper, a wide-input range CMOS multi-mode rectifier for wireless power transfer system is presented. The output voltage of multi-mode rectifier is sensed by comparator and switches are controlled based on it. The mode of multi-mode rectifier is automatically selected by the switches among full-wave rectifier, 1-stage voltage multiplier and 2-stage voltage multiplier. In full-wave rectifier mode, the rectified output DC voltage ranges from 9 V to 19 V for a input AC voltage from 10 V to 20 V. However, the input-range of the multi-mode rectifier is more improved than that of the conventional full-wave rectifier by 5V, so the rectified output DC voltage ranges from 7.5 V to 19 V for a input AC voltage from 5 V to 20 V. The power conversion efficiency of the multi-mode rectifier is 94 % in full-wave rectifier mode. The proposed multi-mode rectifier is fabricated in a $0.35{\mu}m$ CMOS process with an active area of $2500{\mu}m{\times}1750{\mu}m$.

• Journal of IKEEE
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• v.15 no.4
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• pp.319-323
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• 2011

In this paper presents a new model of dual-mode synchronous buck converter with dynamic control for mobile applications was proposed. The proposed circuit can operate at 2.5MHz with supply voltage 2.5V to 5V for low ripple and minimum inductor and capacitor size, which is suitable for single-cell lithium-ion battery supply mobile applications. For high efficiency, the proposed circuit adopts synchronous type and dynamic control. The proposed circuit is designed by using the device parameter of TSMC 0.18um BCD process and the performance is evaluated by Cadence spectre. Experimental board level results show the maximum conversion efficiency is 96% at 100mA load current.

• Journal of IKEEE
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• v.17 no.1
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• pp.77-82
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• 2013

In this paper, dc-dc buck converter controled by the peak current-mode pulse-width-modulation (PWM) presented. Based on the small-signal model, we propose the novel methods of the power stage and the systematic stability designs. To improve the reliability and performance, over-temperature and over-current protection circuits have been designed in the dc-dc converter systems. To prevent electrostatic An electrostatic discharge (ESD) protection circuit is proposed. The proposed dc-dc converter circuit exhibits low triggering voltage by using the gate-substrate biasing techniques. Throughout the circuit simulation, it confirms that the proposed ESD protection circuit has lower triggering voltage(4.1V) than that of conventional ggNMOS (8.2V). The circuit simulation is performed by Mathlab and HSPICE programs utilizing the 0.35um BCD (Bipolar-CMOS-DMOS) process parameters.

• Journal of IKEEE
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• v.24 no.1
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• pp.161-169
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• 2020

In order to reduce the manufacturing cost of MCU chips used in applications such as wireless chargers and USB-C, compared to DP-EEPROM (Double Poly EEPROM), which requires 3 to 5 additional process masks, it is even more necessary MTP(Multi-Time Programmable), which is less than one additional mask and have smaller unit cell size. In addition, in order to improve endurance characteristics and data retention characteristics of the MTP memory cell due to E/P(Erase / Program) cycling, the distribution of the V_TP(Program Threshold Voltage) and the V_TE(Erase Threshold Voltage) needs to be narrow. In this paper, we proposed a current-type BL S/A(Bit-Line Sense Amplifier) circuit, WM(Write Mask) circuit, BLD(BL Driver) circuit and a algorithm, which can reduce the distribution of program and V_T and erase V_T, through compare the target current by performing the erase and program pulse of the short pulse several times, and if the current specification is satisfied, the program or erase operation is no longer performed. It was confirmed that the 256Kb MTP memory fabricated in the Magnachip semiconductor 0.13㎛ process operates well on the wafer in accordance with the operation mode.