• Journal of Electrochemical Science and Technology
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• 제7권4호
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• pp.306-315
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• 2016

Amorphous vanadium titanates (aVTOs) are examined for use as a negative electrode in lithium-ion batteries. These amorphous mixed oxides are synthesized in nanosized particles (<100 nm) and flocculated to form secondary particles. The $V^{5+}$ ions in aVTO are found to occupy tetrahedral sites, whereas the $Ti^{4+}$ ions show fivefold coordination. Both are uniformly dispersed at the atomic scale in the amorphous oxide matrix, which has abundant structural defects. The first reversible capacity of an aVTO electrode ($295mAhg^{-1}$) is larger than that observed for a physically mixed electrode (1:2 $aV_2O_5$ | $aTiO_2$, $245mAhg^{-1}$). The discrepancy seems to be due to the unique four-coordinated $V^{5+}$ ions in aVTO, which either are more electron-accepting or generate more structural defects that serve as $Li^+$ storage sites. Coin-type Li/aVTO cells show a large irreversible capacity in the first cycle. When they are prepared under nitrogen (aVTO-N), the population of surface hydroxyl groups is greatly reduced. These groups irreversibly produce highly resistive inorganic compounds (LiOH and $Li_2O$), leading to increased irreversible capacity and electrode resistance. As a result, the material prepared under nitrogen shows higher Coulombic efficiency and rate capability.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.423-425
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• 2005

Reflective paper-like display (PLD) using two types of particles having different electric polarity has been developed. A positive-charged particle has $TiO_2$, polymer and charge control agent (CCA), while a negative-charged particle consists of carbon black, polymer and CCA. We achieved fast response time (${\sim}0.2$ msec) and passive matrix driving addressing. These methods can easily be adapted to complete a large area display and flexible display.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1283-1284
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• 2007

The barium strontium calcium titanate((Ba,Sr,Ca)$TiO_3$) powders prepared by the sol-gel method and $MnCO_3$ as acceptor were mixed oxide method. The microstructure was investigated with variation of $Pr_{2}O_{3}$ amount. The BSCT powder and $Pr_{2}O_{3}$ were mixed with organic vehicle(Ferro. B75001). BSCT thick films were fabricated by the screen-printing method on alumina substrates. The bottom electrode was Pt and upper electrode was Ag, respectively. All BSCT thick films were sintered at $1420^{\circ}C$, for 2h. The result of the differential thermal analysis(DTA), exothermic peak at around $654^{\circ}C$ due to the formation of the polycrystalline perovskite phase. In the X-ray diffraction(XRD) patterns, all BSCT thick films showed the typical perovskite polycrystalline structure and no pyrochlore phase was dbserved. The microstructure investigated by scanning electron microscope(SEM). Pore and grain size of BSCT thick films were decreased with increasing amount of $Pr_{2}O_{3}$ dopant. And the average grain size and thickness of BSCT thick films doped with 0.1 mol% $Pr_{2}O_{3}$ was $3.09{\mu}m$, $60{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss decreased with increasing amount of $Pr_{2}O_{3}$ dopant, the values of the BSCT thick films no doped with $Pr_{2}O_{3}$ were 7443 and 4 % at 1 kHz, respectively.

• 폴리머
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• 제32권5호
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• pp.465-469
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• 2008

블록 공중합체의 자기조립현상과 졸-겔 공정을 결합하여 나노크기 수준에서 다양한 형태를 발현하는 블록공중합체-이산화티타늄 하이브리드 박막의 모폴로지를 제조하였다. 모폴로지 변화를 일으키는 요소로서 블록 공중합체의 조성, 용매의 선택성과 첨가제에 의한 영향을 고려하였으며, 모폴로지 변화에 따른 이산화티타늄의 발광 효율 변화 또한 확인하였다. 폴리스티렌-폴리4비닐피리딘 이중블록공중합체는 용매와 두 블록간의 상대적인 친화성에 따라 미셀과 나노선 형태로 자기조립이 가능하며, 이산화티타늄의 전구체인 티타늄 테트라아이소프로폭시드는 폴리4비닐피리딘블록의 질소 원소와 결합한다. 블록 공중합체/졸-겔 전구체 혼합 용액에 제3의 성분인 3-펜타데실페놀을 첨가하면 블록의 상대적인 부피 비율의 변화를 야기하여 모폴로지 변화를 일으킨다. 다양하게 변화하는 모폴로지에서 이산화 티타늄의 형광 효율이 변화함을 확인하였다.

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.731-735
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• 2001

S $r_{0.89}$B $i_{2.4}$T $a_2$ $O_{9}$ (SBT) thin films are deposited on Pt-coated electrode(Pt/Ti $O_2$/ $SiO_2$/Si) using RF magnetron sputtering method. In the XRD pattern, the SBT thin films had (105) orientation. As annealing temperature was increased from $600^{\circ}C$ to 85$0^{\circ}C$, the intensities of peak were increased. In the SEM images, Bi-layered perovskite phase was crystallized above $650^{\circ}C$ and rod-like grains grew above 75$0^{\circ}C$. The maximum remanent polarization and the coercive electric field at annealing temperature of 75$0^{\circ}C$ are 11.60$\mu$C/$\textrm{cm}^2$ and 48kV/cm respectively. The dielectric constant and leakage current density at annealing temperature of 75$0^{\circ}C$ are 213 and 1.01x10$^{-8}$ A/$\textrm{cm}^2$, respectively. The fatigue characteristics of SBT thin filmsdid not change up to 10$^{10}$ switching cycles.s.s.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권12호
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• pp.553-558
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• 2003

The A S $r_{0.7}$B $i_{2.6}$T $a_2$ $O_{9}$ (SBT)thin films are deposited on Pt-coated electrode(Pt/$TiO_2$/$SiO_2$/Si) using a RF magnetron sputtering method. The electrical properties of SBT capacitors with top electrodes were studied. In the XRD pattern, the SBT thin films in all annealing temperatures had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized at 75$0^{\circ}C$ and grains largely grew in oxygen annealing atmosphere. The electrical properties of SBT capacitor with top electrodes represent a favorable properties in Pt electrode. The maximum remanent polarization and the coercive electric field with Pt electrode are 12.40C/$\textrm{cm}^2$ and 30kV/cm, respectively. The dielectric constant and leakage current density with Pt electrode is 340 and 6.8110$^{-10}$ A/$\textrm{cm}^2$, respectively.y.y.

• ETRI Journal
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• 제27권5호
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• pp.551-556
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• 2005

We have demonstrated a high-power widely tunable sampled grating distributed Bragg reflector (SGDBR) laser integrated monolithically with a semiconductor optical amplifier (SOA) having a lateral tapered waveguide, which is the first to emit a fiber-coupled output power of more than 10 dBm using a planar buried heterostructure (PBH). The output facet reflectivity of the integrated SOA using a lateral tapered waveguide and two-layer AR coating of $TiO_2\;and\;SiO_2$ was lower than $3\;{\times}\;10^{-4}\;over$ a wide bandwidth of 85 nm. The spectra of 40 channels spaced by 50 GHz within the tuning range of 33 nm were obtained by a precise control of SG and phase control currents. A side-mode suppression ratio of more than 35 dB was obtained in the whole tuning range. Fiber-coupled output power of more than 11 dBm and an output power variation of less than 1 dB were obtained for the whole tuning range.

• 센서학회지
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• 제17권2호
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• pp.127-132
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• 2008

The effect of $CeO_2$ as a sintering additive on the microstructure and the piezoelectric property of yPb$(Sb_{0.5}Nb_{0.5})O_3$-(1-y)Pb$(Zr_{0.52}Ti_{0.48})O_3$ ($0{\leq}y{\leq}0.1$, PSN-PZT) for a hypersonic sound speaker (HSS) application was investigated. The samples were sintered at $1250^{\circ}C$ for 2 h. The crystal structure and surface morphology of the samples were examined using XRD and FE-SEM, respectively. Study on the influence of $CeO_2$ additives on the dielectric and piezoelectric properties indicated that the $CeO_2$-added PSN-PZT system had a high piezoelectric properties. The optimized results of ${\varepsilon}_r=1209$, $K_p$=52% $d_{33}$=351(pC/N) and $Q_m$=1230.16 were obtained at 0.4 wt.% $CeO_2$-added PSN-PZT.

• 한국초전도ㆍ저온공학회논문지
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• 제12권3호
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• pp.44-48
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• 2010

Acoustic emission (AE) signal from an HTS tape has a low signal to noise ratio, due to the large amount of noise caused by the boiling of the liquid cryogen or mechanical vibration from the cryo-cooler. In an attempt to improve the sensitivity of the AE sensor, $Pb(Zr_{0.54}Ti_{0.46})O_3$ + 0.2 wt% $Cr_2O_3$ + 1.0 wt.% $Nb_2O_5$ ceramics sintered at $1200^{\circ}C$ was synthesized. In addition, the resonance ($f_r$) and anti-resonance frequencies ($f_a$) were measured using the specimens with various thicknesses (1.0, 1.5, 2.0, 2.5 and 3.0 mm). According to the test results, large AE signals with high frequencies were obtained from the AE sensor fabricated using a piezoelectric disc with a thinner thickness.