• Journal of electromagnetic engineering and science
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• 제14권2호
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• pp.61-67
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• 2014

This paper presents a zero-IF CMOS RF receiver, which supports three channel bandwidths of 5/10/40MHz for LTE-Advanced systems. The receiver operates at IMT-band of 2,500 to 2,690MHz. The simulated noise figure of the overall receiver is 1.6 dB at 7MHz (7.5 dB at 7.5 kHz). The receiver is composed of two parts: an RF front-end and a baseband circuit. In the RF front-end, a RF input signal is amplified by a low noise amplifier and $G_m$ with configurable gain steps (41/35/29/23 dB) with optimized noise and linearity performances for a wide dynamic range. The proposed baseband circuit provides a -1 dB cutoff frequency of up to 40MHz using a proposed wideband OP-amp, which has a phase margin of $77^{\circ}$ and an unit-gain bandwidth of 2.04 GHz. The proposed zero-IF CMOS RF receiver has been implemented in $0.13-{\mu}m$ CMOS technology and consumes 116 (for high gain mode)/106 (for low gain mode) mA from a 1.2 V supply voltage. The measurement of a fabricated chip for a 10-MHz 3G LTE input signal with 16-QAM shows more than 8.3 dB of minimum signal-to-noise ratio, while receiving the input channel power from -88 to -12 dBm.

• 전기전자학회논문지
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• 제23권3호
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• pp.917-924
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• 2019

This paper presents a wideband low noise amplifier (LNA) that is suitable for LTE-Advanced and 5G communication standards employing carrier aggregation (CA). The proposed LNA encompasses a common input stage and a dual output second stage with a buffer at each distinct output. This architecture is targeted to operate in both intra-band (contiguous and non-contiguous) and inter-band CA. In the proposed design, the input and second stages employ a gm enhancement with resistive feedback technique to achieve self-biasing, enhanced gain, wide bandwidth as well as reduced noise figure of the proposed LNA. An up/down power controller controls the single input single out (SISO) and single input multiple outputs (SIMO) modes of operation for inter-band and intra-band operations. The proposed LNA is designed with a 45nm CMOS technology. For SISO mode of operation, the LNA operates from 0.52GHz to 4.29GHz with a maximum power gain of 17.77dB, 2.88dB minimum noise figure and input (output) matching performance better than -10dB. For SIMO mode of operation, the proposed LNA operates from 0.52GHz to 4.44GHz with a maximum voltage gain of 18.30dB, a minimum noise figure of 2.82dB with equally good matching performance. An $IIP_3$ value of -6.7dBm is achieved in both SISO and SIMO operations. with a maximum current of 42mA consumed (LNA+buffer in SIMO operation) from a 1.2V supply.

• 전자공학회논문지B
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• 제33B권5호
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• pp.1-9
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• 1996

In this paper, a parameter identification method for a discrete-time linear system using multi-layer neural network is proposed. The parameters are identified with the combination of weights and the output of neuraons of a neural network, which can be used for a linear and a nonlinear controller. An adaptive output tracking architecture is designed for the linear controller. And, the nonlinear controller. A sliding mode control law is applied to the stabilizing the nonlinear controller such that output errors can be reduced. The effectiveness of the proposed control scheme is illustrated through simulations.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제54권10호
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• pp.492-496
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• 2005

An electronic ballast with automatic identification between HPS and MH lamps is proposed in this paper. The behavior of the lamp impedance is studied at both cold-starting and warm-starting. Lamp identification is carried out by taking into account the rate of impedance changing at constant current driving mode just after ignition. The ballast consists of 8-bit microcontroller and LCC resonant inverter.

• 전자공학회논문지B
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• 제30B권2호
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• pp.1-7
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• 1993

In this paper, we show that Petri nets can be applied to design and reliability analysis of concurrent, parallel and embedded mode system such as a lift system that is familiar to our daily life. Modeling the behavioral characteristics of the lift system we extend the standard Petri nets by nadditionally constant timed transition, fault transition, stochastic imed ttransition and conditional transition concepts. Likewise, we present esults of rdesign and analysis of the system. This method can be applied to esign and danalysis of any other concurrent systems.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 추계학술대회 논문집
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• pp.141-142
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• 2006

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(5)
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• pp.87-90
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• 2002

This paper describes design technique of switched-capacitor 1V delta-sigma modulator. To solve the incomplete switching operation at low voltage, bootstrapping technique is used. For PMOS input pair of 1V operational amplifier, simple common mode level down technique is used. Designed 2nd order single loop modulator has an oversampling ratio of 64 and obtains a peak SNR of 71dB, a dynamic range of 73 dB with the power consumption of 350uW at 1V power supply.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2006년도 전력전자학술대회 논문집
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• pp.292-294
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• 2006

This paper presents a study on the use of improved space-vector modulation of VSI employing only four switches, four body diodes. Different switching sequence strategy for vector control for inverter fault mode are described. The influence of different switching patterns at same modulation index and improved PWM method is proposed. The proposed PWM is compared with conventional PWM. Simulation and experimental results are presented.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.477-479
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• 1997

The preparation of mach-zehnder inteferometric optical modulator and the properties of electrode and modulation bandwidth for high speed optical communications were described. The results of fabricated optical modulator was that optical 3-dB bandwidth 4.7GHz, driving voltage 6V and fiber-waveguide-fiber insertion loss 4.5dB for TM mode respectively.

• Bulletin of the Korean Chemical Society
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• 제20권6호
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• pp.657-662
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• 1999

The variation of Jahn-Teller(J-T) distortion imposed on various metallo- tetraphenylporphyrins(MTPPS;M=ZnⅡ,PdⅡ,PtⅡ,and RhⅢ) has been investigated by time-resolved resonance Raman spectroscopy. B1g and B2g modes of the triplet(π,π*) states for the heavy-metal porphyrins exhibit the enhancement of their intensities compared with those of 3ZnⅢTPP, while the enhancement of phenyl internal mode is reduced. These results suggest that the J-T distortion becomes manifest as the metal size increases, and consequently the porphyrin-to-phenyl ring charge transfer in the excited triplet state is inhibited.