• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.146-149
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• 2016

The CrN/TiN/Al thin films for solar selective absorber were prepared by dc reactive magnetron sputtering with multi targets. The binary nitride CrN layer deposited with change in N₂ gas flow rates. The gas mixture of Ar and N2 was an important parameter during sputtering deposition because the metal volume fraction (MVF) was controlled by the N2 gas flow rate. In this study, the crystallinity and surface properties of the CrN/TiN/Al thin films were estimated by X-ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The composition and depth profile of thin films were investigated using Auger electron spectroscopy (AES). The absorptance and reflectance with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 300~1,100 nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.353.1-353.1
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• 2016

다공성 물질은 동공의 크기에 따라 미세동공(Micropore), 메조동공(Mesopore), 거대동공(Macropore)으로 나누어 분류한다. 다공성 재료의 장점은 높은 비표면적으로써, 촉매, 센서, 연료전지 전극, 에너지 저장장치 등으로의 이용 가능성을 보여주는 연구가 활발히 보고되고 있다. 종래의 연구는 두 가지 이상의 원소로 구성된 박막을 제작한 후 전기화학적 분해법, 선택적 용해법 등 습식공정을 통해 다공성 구조체를 제작하였다. 하지만 본 연구에서는 Au, Ag 타겟과 $CH_4$ gas를 이용해 ICP-assisted reactive magnetron sputtering 장비를 활용하여 450 nm 두께의 Au-C, Ag-C 박막을 제작하였다. 이후 연속적으로 RF 250 W를 ICP antenna 에 인가하여 $O_2$ plasma dealloying 공정을 통해 탄소(Carbon) 만을 선택적으로 제거함으로써, 건식 공정만으로 Si wafer ($10{\times}10mm^2$) 기판 위에 250 ~ 300 nm 두께의 다공성 Au, Ag 박막을 제작하였다. SEM (Scanning Electron Microscopy)를 활용하여 표면, 단면 형상을 관찰해 다공성 구조를 확인하였으며, AES (Auger Electron Spectroscopy)를 통해 plasma dealloying 전 후 박막의 조성변화를 관찰하였다. 따라서 plasma dealloying 공정으로 제작된 다공성 Au, Ag 박막은 기존의 습식 공정 대비 청결하고 신속한 공정이 가능하며 높은 재현성을 통해 위의 적용분야에 보다 쉽게 사용될 수 있을 것으로 기대된다.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.177-182
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• 2017

The properties of electroless Ni-B thin film on diamond powder with different parameters (temperature, pH, surfactant etc.) were studied. The surface morphology, structure and composition distribution of the Ni-B film were observed by field effect scanning electron microscope (FE-SEM), energy-dispersive spectrometer (EDS), X-ray diffraction (XRD) and Auger electron spectroscopy (AES). The growth rate of Ni-B film was increased with increase of bath temperature. The B content in Ni-B film was reduced with increase of bath pH. As a result the structure of Ni-B film was changed from amorphous to crystalline structure. The PVP in solution plays multi-functional roles as a dispersant and a stabilizer. The Ni-B film deposited with adding 0.1 mM-PVP was strongly introduced an amorphous structure with higher B content (25 at.%). Also the crystallite size of Ni-B film was reduced from 12.7 nm to 5.4 nm.

• Journal of Welding and Joining
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• v.13 no.2
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• pp.122-131
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• 1995

The effects of cooling rate on the microstructures, precipitation of Cu-cluster, .epsilon.-Cu and impact toughness of high strength low alloy(HSLA) steel were studied using hardness tester, impact tester, DSC(differential scanning calorimetry), AES(auger electron spectroscopy) and TEM(transmission electron microscopy). Not only the Cu-precipitates but also the segregation of Cu, As, Sb, P, S, N, Sn along grain boundary were not observed at the specimens heat treated from 800.deg. C to 300.deg. C with the cooling time of 12-125 sec. The Cu-cluster, .epsilon.-Cu are formed by introducing ageing after cooling and the effect of precipitates on hardening increase after cooling was the same in all cooling rate. The peak hardness was obtained at an ageing of 500.deg. C in all cooling conditions. The impact energy become higher as the cooling time increases. This fact can be explained to be due to the tempering effect applied on the cooling stage since the present alloy has a relatively high Ms temperature and the local high concentration of the retained austenite.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.280-284
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• 2015

Among many the oxynitrides, TiNO and AlCrNO, have diverse applications in different technological fields. We prepared TiNO/AlCrNO/Al thin films on aluminum substrates using the method of dc reactive magnetron sputtering. The reactive gas flow, gas mixture, and target potential were applied as the sputtering conditions during the deposition in order to control the chemical composition. The multi-layer films have been prepared in an Ar and O₂+N₂ gas mixture rate. The surface properties were estimated by performing scanning electron microscopy (SEM). At a wavelength range of 0.3~2.5 μm, the exact composition and optical properties of thin films were measured by Auger electron spectroscopy (AES) and Ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometry. The optimal absorptance of multi-layer films was exhibited above 95.5% in the visible region of the electromagnetic spectrum, and the reflectance was achieved below 1.89%.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.264-267
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• 2015

AlCrNO cermet films were prepared on aluminum substrates using a DC-reactive magnetron sputtering method and a water-cooled Al:Cr target. The Al₂O₃/AlCrNO (LMVF)/AlCrNO (MMVF)/AlCrNO (HMVF)/Al/substrate of the 5 multi-layers was prepared according to the Ar and (N₂ + O₂) gas-mixture rates. The Al₂O₃ of the top layer is the anti-reflection layer of triple AlCrNO (LMVF)/AlCrNO (MMVF)/AlCrNO (HMVF) layers, and an Al metal forms the infrared reflection layer. In this study, the crystallinity and surface properties of the AlCrNO thin films were estimated using X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM), while the composition of the thin films was systematically investigated using Auger electron spectroscopy (AES). The optical properties of the wavelength spectrum were recorded using UH4150 spectrophotometry (UV-Vis-NIR) at a range of 0.3 μm to 2.5 μm.

• Transactions of the Korean Society of Mechanical Engineers
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• v.18 no.10
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• pp.2514-2522
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• 1994

The mirror surface grinding of carbon fiber reinforced plastics(CFRP) was realized by using the metal bonded super-abrasive micro grain wheel with electrolytic in-process dressing(ELID). The maximum surface roughness $R_{max}$ of CFRP which was obtained with #6,000 wheel, was 0.65 $\mu{m}$, which was rougher surface finish compared to those of hard and brittle materials with the same mesh number wheel with ELID. The grinding performance was much dependent on the grinding direction and the best surface roughness was obtained at $90^{\circ}C$ grinding with fiber direction. The spark-out effect on the surface improvement was significant when smaller mesh number grinding wheels were used. From the surface observations of CFRP with scanning electron microscope(SEM) and Auger electron spectroscopy(AES), it was found that the mirror surface grinding of CFRP was generated by the homogenization due to carbonization of the ground surface and smearing of chips composed of the carbon fiber and carbonized epoxy resin into the ground surface.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.88-95
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• 2005

The head to disk spacing must be decreased to increase recording densities in hard disk drives. Recently, to decrease the head to disk spacing, smooth disk having no bumps onto the lading zone has used. In this research, we compared the number of particles generated in HDD with smooth and textured disks. We used a sampling method using a particle sampler and a CPC (condensation particle counter) to detect particles in HDD. First, we sampled and counted panicles generated with disk rotational speed and various rest times when the smooth disk and textured disks were used, then analyzed the sampled particles by SEM (scanning electron microscopy) and AES (auger electron spectroscopy). In results of measuring particles, more particles in case of LZT disk drive generated than that of the smooth disk drive in all test modes. The number of particles generated in the smooth disk was very low. The particle generation increased as the rest time increased (smooth/LZT disks) and more particles in case of LZT disk drive generated than that of the smooth disk drive. In results of analyzing particle components, Al, Ti, Si components were detected and we could not found differences between components in case of smooth/LZT disk drive.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.473-476
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• 1997

Focused Ar ion laser beam can be utilized to fabricate microstructures on silicon substrate as well as other materials(e.g. such as ceramic). The laser using in this study is an argon ion laser with maximum power of 6 W, wavelength of 514 nm. This laser beam is focused by objectives with a high numerical aperture, a long working distance. We have achieved line width about 1 ${\mu}{\textrm}{m}$ with high scan speed. The resolution for Si machining is determined by the selectivity of the chemical reaction rather than the laser spot size. In this study, we have obtained the maximum etch rate of 434.7 ${\mu}{\textrm}{m}$/sec with high aspect ratio. The characteristics of etched groove was investigated by scanning electron microscope(SEM) and auger electron spectroscopy(AES). It is assumed that the technique using arson ion laser is applicab1e to fabricate microstructures.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.183-186
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• 2004

The metal-ferroelectric-insulator-semiconductor(MFIS) capacitors were fabricated using a metalorganic decomposition (MOD)method. The $CeO_2$ thin films were deposited as a buffer layer on Si substrate and $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated by varying the $CeO_2$ layer thickness. The width of the memory window in the capacitance-voltage (C-V)curves for the MFIS structure decreased with increasing thickness of the $CeO_2$ layer. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) show no interdiffusion by using the $CeO_2$ film as buffer layer between the BLT film and Si substrate. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory field-effect-transistors (FETs) with large memory window.