• 제목/요약/키워드: Au thin film

검색결과 302건 처리시간 0.024초

터널링 박막 두께 변화에 따른 부동 게이트 유기 메모리 소자 (Floating Gate Organic Memory Device with Tunneling Layer's Thickness)

  • 김희성;이붕주;신백균
    • 한국진공학회지
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    • 제21권6호
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    • pp.354-361
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    • 2012
  • 유기 메모리 절연막 제작을 위해 일반적으로 사용되어지는 습식법이 아닌 건식법 중 플라즈마 중합법을 이용하였다. 유기 절연 박막으로 사용된 단량체는 Styrene과 MMA을 사용하고, 터널링 박막은 MMA를 사용하며, 메모리 박막은 열기상증착법을 이용한 Au 박막을 사용하였다. 최적화된 소자의 구조는 Au의 메모리층의 두께를 7 nm, Styrene 게이트 절연막의 두께를 400 nm, MMA 터널링 박막의 두께를 30 nm로 증착하여 제작된 부동 게이트형 유기 메모리 소자는 40/-40 V의 double sweep시 27 V의 히스테리시스 전압을 얻을 수 있었다. 이 특성을 기준하여 유기 메모리의 전하 포집 특성을 얻을 수 있었다. 유기 재료 중 MMA 대비 Styrene의 전하 포집 특성이 좋은 것으로 보아 향후 부동 게이트인 Au 박막을 유기 재료인 Styrene으로 대체하여 플렉시블 소자의 가능성을 기대한다.

Au/Au-Sn 이종접합 적용 레이저 패키징을 통한 Vapor Cell 신뢰성 연구 (Study on Reliability of Vapor Cell by Laser Packaging with Au/Au-Sn Heterojunction)

  • 권진구;전용민;김지영;이은별;이성의
    • 한국전기전자재료학회논문지
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    • 제33권5호
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    • pp.367-372
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    • 2020
  • As packaging processes for atomic gyroscope vapor cells, the glass tube tip-off process, anodic bonding, and paste sealing have been widely studied. However, there are stability issues in the alkali metal which are caused by impurity elements and leakage during high-temperature processes. In this study, we investigated the applicability of a vapor cell low-temperature packaging process by depositing Au on a Pyrex cell in addition to forming an Au-Sn thin film on a cap to cover the cell, followed by laser irradiation of the Au/Au-Sn interface. The mechanism of the thin film bonding was evaluated by XRD, while the packaging reliability of an Ne gas-filled vapor cell was characterized by variation of plasma discharge behavior with time. Furthermore, we confirmed that the Rb alkaline metal inside the vapor cell showed no color change, indicating no oxidation occurred during the process.

신축 전자패키지 배선용 금속박막의 신축변형-저항 특성 II. Au, Pt 및 Cu 박막의 특성 비교 (Stretchable Deformation-Resistance Characteristics of Metal Thin Films for Stretchable Interconnect Applications II. Characteristics Comparison for Au, Pt, and Cu Thin Films)

  • 박동현;오태성
    • 마이크로전자및패키징학회지
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    • 제24권3호
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    • pp.19-26
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    • 2017
  • Polydimethylsiloxane (PDMS) 기판과 금속박막 사이의 중간층으로 parylene F를 사용한 신축패키지 구조에서 Au, Pt, Cu 박막의 신축변형에 따른 저항변화를 분석하였다. Parylene F 중간층을 코팅한 PDMS 기판에 스퍼터링한 150 nm 두께의 Au 박막과 Pt 박막은 각기 $1.56{\Omega}$$5.53{\Omega}$의 초기저항을 나타내었으며, 30% 인장변형률에서 각 박막의 저항증가비 ${\Delta}R/R_o$은 각기 7 및 18로 측정되었다. Cu 박막은 $18.71{\Omega}$의 높은 초기저항을 나타내었으며 인장변형에 따라 저항이 급격히 증가하다 5% 인장변형률에서 open 되어, Au 박막과 Pt 박막에 비해 매우 열등한 신축 특성을 나타내었다.

Synthesis and characterization Au doped TiO2 film for photocatalytic function

  • Son, Jeong-Hun;Bae, Byung-Seo;Bae, Dong-Sik
    • 한국결정성장학회지
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    • 제25권6호
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    • pp.280-284
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    • 2015
  • Au doped $TiO_2$ nanoparticles have been synthesized using a reverse micelle technique combined with metal alkoxide hydrolysis and condensation. Au doped $TiO_2$ was coated with glass substrate. The size of the particles and thickness of the coating can be controlled by manipulating the relative rates of the hydrolysis and condensation reaction of TTIP within the micro-emulsion. The average size of synthesized Au doped $TiO_2$ nanoparticle was about in the size range of 15 to 25 nm and the Au particles formed mainly the range of 2 to 10 nm in diameter. The effect of synthesis parameters, such as the molar ratio of water to TTIP and the molar ratio of water to surfactant, are discussed. The synthesized nanopaticles were coated on glass substrate by a spin coating process. The thickness of thin film was about 80 nm. The degradation of MB on a $TiO_2$ thin film was enhanced over 20 % efficiency by the incorporation of Au.

INVESTIGATION OF ENERGETIC DEPOSITION OF Au/Au (001) THIN FILMS BY COMPUTER SIMULATION

  • Zhang, Q. Y.;Pan, Z. Y.;Zhao, G. O.
    • 한국진공학회지
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    • 제7권s1호
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    • pp.183-189
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    • 1998
  • A new computer simulation method for film growth, the kinetic Monte Carlo simulation in combination with the results obtained from molecular dynamics simulation for the transient process induced by deposited atoms, was developed. The behavior of energetic atom in Au/Au(100) thin film deposition was investigated by the method. The atomistic mechanism of energetic atom deposition that led to the smoothness enhancement and the relationship between the role of transient process and film growth mechanism were discussed. We found that energetic atoms cannot affect the film growth mode in layer-by-layer at high temperature. However, at temperature of film growth in 3-dimensional mode and in quasi-two-dimensional mode, energetic atoms can enhance the smoothness of film surface. The enhancement of smoothness is caused by the transient mobility of energetic atoms and the suppression for the formation of 3-dimensional islands.

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기판온도와 열처리온도의 변화에 따른 Au/Cr, Au/Ni/Cr 및 Au/Pd/Cr 다층박막의 AES 분석 (AES Analysis of Au, Au/Cr, Au/Ni/Cr and Au/Pd/Cr Thin Films by the Change of Substrate Temperature and Annealing Temperature)

  • 유광수;정형진
    • 분석과학
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    • 제6권2호
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    • pp.217-223
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    • 1993
  • 저항가열식 진공중착기를 이용하여 실온(ambient temp.)과 $250^{\circ}C$에서 알루미나 기판 위에 Au/Cr, Au/Ni/Cr 및 Au/Pd/Cr 박막을 제조하였으며, 공기 중에서 $300^{\circ}C$, $450^{\circ}C$, $600^{\circ}C$의 온도로 각각 1시간 동안 열처리하였다. Au, Ni(또는 Pd) 및 Cr 박막의 두께는 각각 $1000{\AA}$, $300{\AA}$, 및 $50{\AA}$이었다. 박막 제조시 기판의 온도와 박막 제조 후 열처리 온도는 각 층의 상호확산으로 인하여 박막의 면저항값에 영향을 주었다. Auger depth profile 분석결과, Au/Cr 시스템에서는 기판의 온도는 $250^{\circ}C$로 하여 박막을 제조할 때 이미 Cr은 Au 표면으로 확산되었으며, 열처리 후에는 Au의 분포도만 변화하였다. Au/Ni/Cr과 Au/Pd/Cr 시스템의 경우 Ni와 Pd 모두 확산현상이 발견되었으며, 특히 Ni(약 45 at.%)는 Au 박막 표면으로 확산되어 산화되었다.

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Organic thin-film transistors and transistor diodes with transfer-printed Au electrodes

  • Cho, Hyun-Duck;Lee, Min-Jung;Yoon, Hyun-Sik;Char, Kook-Heon;Kim, Yeon-Sang;Lee, Chang-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1122-1124
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    • 2009
  • Organic thin-film transistors (OTFTs) were fabricated by using the transfer patterning method. In order to remove Au pattern easily, UV-curable polymer mold was surface treated. Au source/drain (S/D) pattern was transferred to insulator-coated substrate surface. Fabricated OTFTs were compared to OTFTs using vacuum-deposited Au S/D. Additionally, transistor diodes were characterized.

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Gold Nanoparticles-embedded MAPbI3 Perovskite Thin Films

  • Kim, Hyojung;Byun, Hye Ryung;Kim, Bora;Jeong, Mun Seok
    • Journal of the Korean Physical Society
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    • 제73권11호
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    • pp.1725-1728
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    • 2018
  • We synthesized the gold nanoparticles (Au NPs)-embedded methylammonium lead iodide ($MAPbI_3$) film for the first time. The effects of metal nanoparticles on $MAPbI_3$ perovskite were systematically studied using UV-Vis absorption and photoluminescence (PL) measurements. As a result, the 20-nm-sized Au NPs-embedded $MAPbI_3$ film exhibited a 4.15% higher absorbance than the bare $MAPbI_3$ film. Moreover, the average PL intensity of the Au NPs-embedded $MAPbI_3$ film increased by about 75.25% over the bare $MAPbI_3$ film. Therefore, we have confirmed that addition of the Au NPs has a positive effect on the optical properties of $MAPbI_3$, and we believe that this study will provide a basic insight into the metal nanoparticles-embedded perovskite thin films for the future optoelectronic applications.

죠셉슨 소자구현을 위한 YBCO다층 박막 제작 및 특성 (Fabrication and Charactreization of YBCO Multi-layer Thin Films for Josephson device)

  • 이현수;박재윤;박상현;이동훈;박홍재;김영주
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 학술대회 논문집 전문대학교육위원
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    • pp.49-51
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    • 2002
  • In this thesis, Josephson junction using high-Tc superconducting multi-layer thin film has been fabricated by on-axis RF magnetron sputtering method. And, the characterizations were performed by X-ray diffraction, SEM and the measuring system of critical current density. The physical properties of multi-layer superconducting thin films were also analyzed with the measured results. To fabricate the multi-layer superconducting thin films, the optimum partial pressure of Argon and Oxgen and the temperature of substrate were measured. Also, YBaCuO thin film was grown on MgO and $SrTiO_3$ substrates by rf-sputtering and LGO thin film of 30 A was epitaxially grown on the YBaCuO thin film as a josephson junction with the same condition. The schottky barrier at the contact surface between YBaCuO/LGO and YBaCuO/Au and the energy gap of 0.5 ${\sim}$ 0.6 mV in Nb were observed from the dI/dV-V of YBaCuO/LGO/Au/Nb and YBaCuO/Au/Nb.

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Cl2/Ar 유도 결합 플라즈마에 의한 gold 박막의 식각특성 (Etching Characteristics of Gold Thin films using Inductively Coupled Cl2/Ar Plasma)

  • 장윤성;김동표;김창일;장의구;이수재
    • 한국전기전자재료학회논문지
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    • 제15권12호
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    • pp.1011-1015
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    • 2002
  • In this study, Au thin films were etched with a Cl$_2$/Ar gas combination in an inductively coupled plasma. The highest etch rate of the Au thin film was 3500 A/min at a Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in Cl$_2$/Ar plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions[l].