• Korean Journal of Chemical Engineering
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• v.36 no.6
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• pp.975-980
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• 2019

Infrared (IR) spectroscopy is a powerful technique for observing organic molecules, as it combines sensitive vibrational excitations with a non-destructive probe. However, gaseous volatile compounds in the air are challenging to detect, as they are not easy to immobilize in a sensing device and give enough signal by themselves. In this study, we fabricated a thin nanocrystalline metal-organic framework (nMOF) film on a surface plasmon resonance (SPR) substrate to enhance the IR vibration signal of the gaseous volatile compounds captured within the nMOF pores. Specifically, we synthesized nanocrystalline HKUST-1 (nHKUST-1) particles of ca. 80 nm diameter and used a colloidal dispersion of these particles to fabricate nHKUST-1 films by a spin-coating process. After finding that benzene was readily adsorbed onto nHKUST-1, an nHKUST-1 film deposited on a plasmonic Au substrate was successfully applied to the IR detection of gaseous benzene in air using surface-enhanced IR spectroscopy.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.99-105
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• 2014

$LiCoO_2$ thin film have received attention as cathodes of thin-film microbatteries. In this study, $LiCoO_2$ thin films were synthesized on Au substrates by sol-gel spin coating method and electrochemical properties were investigated under annealing temperature and time. The phycochemical properties of $LiCoO_2$ thin film were investigated by X-ray diffraction, scaning electron microscopy and atomic force microscopy. The electrochemical properties were characterized using galvanostatic charging/discharging cycling tests. From X-ray diffraction, as-grown films annealed at $550^{\circ}C$ and $750^{\circ}C$ are presumed to be spinel structure and a single phase of the layered-rock-salt, respectively. The RMS roughness and grain size of the films which annealed at $750^{\circ}C$ has similar values for annealing time 10 and 30 min, while for annealing time 120 min surface roughness, grain size increase and pore appearance were observed. The first discharge capacity of $LiCoO_2$ thin films annealed at $750^{\circ}C$ for 10, 30 and 120 min is about 54.5, 56.8 and $51.87{\mu}Ah/cm^2{\mu}m$, respectively. Corresponding capacity retention at 50th cycle is 97.25, 76.69, 77.19%.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.39-46
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• 2013

In this paper, organic solar cells(OSCs) based on bulk-heterojunction structures were fabricated by spin coating method using polymer P3HT and fullerene PCBM as a photoactive layer. The fabricated OSCs had a simple glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structures. The photoactive layer of mixed P3HT:PCBM was formed with 1:1 weight ratio. The hole transport layer(HTL) was used conducting polymer PEDOT:PSS concentration with gold nanoparticles. The annealing temperature and concentration of nanoparticles in HTL were verified to improve the OSC characterization. The percentage of gold nanoparticles in HTL were 0.5 wt% and 1.0 wt%, and the surface morphology, electrical properties and absorption intensities were investigated. The devices were 0.5 wt%, and the highest 3.1% of the powder conversion efficiency(PCE), 10.2 $mA/cm^2$ of the maximum short circuit current density($J_{SC}$), 0.535V of the open circuit voltage($V_{OC}$) and 55.8% of the fill factor(F.F) could be obtained when the nanoparticle concertration was 0.5 wt%. The annealing temperature of HTL was $110^{\circ}C$, $130^{\circ}C$, $150^{\circ}C$ in vacuum oven and measured the absorption intensities, surface morphology, crystallinity and electrical properties were investigated. The best property was obtained in HTL annealed at $130^{\circ}C$ for gold nanoparticles of 0.5 wt%, showing that $J_{SC}$, $V_{OC}$, F.F and PCE were about 12.0 $mA/cm^2$, 0.525V, 64.2% and 4.0%, respectively.

• Journal of the Korean Electrochemical Society
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• v.4 no.3
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• pp.125-131
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• 2001

A long-term variation of electrode polarization in the MCFC has been analyzed successfully using a single cell with a Au, $CO_2/O_2$ reference electrode Four different cells with different components were operated and their electrode polarizations were analyzed. As published in the literatures, the cathode polarization was larger than that of the anode. The more stable operation of a single cell with the Al-coated cell frame up to 6,000hrs indicates that the corrosion at the cell frame, particularly wet seal area, plays an important role to determine the lifetime of a MCFC. At the initial stage of the cell operation, the voltage of the cell using a cathode stabilized by the $LiCoO_2$ coating was relatively low due to the high cathode polarization. As the cell was operated and the stabilized cathode was lithiated sufficiently, the cathode polarization decreased and the cell voltage was recovered. It was observed that the voltage of the cell using the $Li_2CO_3/Na_2CO_3$ electrolyte fluctuated with operation time and the cathode polarization fluctuated along with the cell voltage quite similarly. Although the mechanisms of the voltage fluctuation were not clear yet, the results imply that the voltage fluctuation was related with a reaction in the cathode side. After testing every single cell, the cathode polarization increased with the steep decrease in the cell voltage. Thus, the cathode should be improved in order to develop more durable MCFC.

• Journal of the Korean Ceramic Society
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• v.45 no.8
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• pp.472-476
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• 2008

The surface region of commercial stainless steel 304 and 316 plates has been modified through deposition of the multi-layered coatings composed of titanium film ($0.1{\mu}m$) and gold film ($1-2{\mu}m$) by an electron beam evaporation method. XRD patterns of the stainless steel plates deposited with conductive metal films showed the peaks of the external gold film and the stainless steel substrate. Surface microstructural morphologies of the stainless steel bipolar plates modified with multi-layered coatings were observed by AFM and FE-SEM images. The stainless steel plates modified with $0.1{\mu}m$ titanium film and $1{\mu}m$ gold film showed microstructure of grains of under 100 nm diameter. The external surface of the stainless steel plates deposited with $0.1{\mu}m$ titanium film and $2{\mu}m$ gold film represented somewhat grain growth of Au grains in FE-SEM image. The electrical resistance and water contact angle of the stainless steel bipolar plates modified with multi-layered coatings were examined with the thickness of the gold film.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.380-380
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• 2013

본 논문에서는 외기 환경 요인 중에서 H2O와 O2의 영향으로 성능이 저하되는 유기박막트랜지스터(OTFT)의 수명시간 향상을 위하여 필요한 passivation layer의 효과에 대하여 알아 보았다. OTFT에 기존의 액상 공정이나 증착 공정으로 단일 passivation layer또는 다층 passivation layer를 형성하는 방식과는 다르게 향후에 산업 전반에 적용이 기대되는 것을 고려하여 제작 공정의 간편성을 위하여 film 형태로 되어 있는 열경화성 epoxy resin film으로 passivation layer를 구현하는 방법을 사용하여 OTFT의 storage stability를 평가하였다. passivation layer가 없는 OTFT와 열경화성 epoxy resin film으로 passivation된 OTFT의 전기적 특성이 서로 비교 평가되었으며 또한 30일 동안 온도 $25^{\circ}C$ 상대습도 40%의 환경을 갖는 Desicator 안에서 소자를 보관하여 시간에 따른 전기적 특성 변화를 검증하여 epoxy resin film의 passivation layer으로의 적용가능성을 검증하였다. 결과적으로 30일 후의 passivation layer가 없는 OTFT의 전기적 특성은 매우 낮게 떨어진 반면에 epoxy resin film으로 passivation layer가 구현된 OTFT의 mobility는 $0.060cm^2$/Vs, VT는 -0.18 V, on/off ratio는 $3.7{\times}10^3$으로 초기의 소자 특성이 잘 유지되는 결과를 얻었다. OTFT는 Flexible한 polyethersulfone (PES)기판에 게이트 전극이 하부에 있는 Bottom gate 구조로 제작되었고 채널 형성을 위한 유기반도체 재료로 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene이 사용되었고 spin coating된 Poly-4-vinylphenol (PVP)가 게이트 절연체로 사용되었다. 이때 Au전극은 Shadow mask를 이용하여 증착하였다. 또한 OTFT의 채널 길이 $100{\mu}m$, 채널 폭 $300{\mu}m$의 영역에 Drop casting법을 사용하여 채널을 형성하였다. 물리적 특성은 scanning electron microscopy (SEM), scanning probe microscopy (SPM), x-ray diffraction (XRD)를 사용하여 분석하였고, 전기적 특성은 Keithley-4200을 사용하여 추출하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.379-379
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• 2013

본 논문에서는 Normal ink jetting 공법으로 OTFT를 제작할 때 coffee stain effect에 의해서 반도체 소자의 특성이 저하되는 것을 극복하기 위해서 동일한 위치에 동일한 부피로 Droplet을 형성하는 Multiple ink jetting 공법을 통해 TIPS pentacene 결정의 Morphology와 전기적 특성이 어떻게 변화하는지 알아 보았다. Multiple ink jetting의 drop 횟수가 증가할수록 coffee stain effect에 의해서 형성된 가운데 영역의 Dendrite grain이 점점 작아지다가 7 Drops 이후로는 Big grain 만 남게 되었다. Active layer의 표면 Roughness는 drop 횟수가 증가할수록 낮아지다가 일정 count 이후로는 다시 높아지는 것을 확인할 수 있었다. 전계 이동도(mobility)는 drop 횟수가 증가할수록 커지다가 일정 count 이후로는 saturation되는 것을 확인할 수 있었다. Multiple ink jetting에 의해서 만들어진 OTFT 소자의 전계 이동도(mobility)는 1 drop과 10 drops에서 각각 0.0059, 0.036 cm2/Vs 로 6배 정도 차이가 있었다. 이것은 첫 drop에 의해 만들어진 가운데 Dendrite grain 영역이 Multiple ink jetting을 반복하면서 점점 작아지게 되어 사라지고 두꺼운 Grain 영역만 남게 된 것으로 판단된다. Vth 와 On/Off ratio는 1 drop과 10 drops에서 각각 -3 V, -2 V 그리고 $3.3{\times}10^3$, $1.0{\times}10^4$를 보였다. OTFT의 substrate로 Flexible한 polyethersulfone (PES) 기판을 사용하였고, 절연체로 Spin coating된 Poly-4-vinylphenol (PVP)가 사용되었으며, Gate 및 Source/Drain 전극은 Au를 50 nm 두께로 증착하였다. Channel의 width와 length는 각각 100 um, 40 um 였고, Gate 전극 위에 Active layer를 형성한 Bottom gate 구조로 제작되었다. Ink jet으로 제작된 TIPS pentacene의 결정성은 x-ray diffraction (XRD)와 광학 현미경으로 분석하였고 Thickness profile은 알파스텝 측정기를 이용하였으며, OTFT의 전기적 특성은 Keithley-4,200을 사용하여 측정하였다.

• Journal of Welding and Joining
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• v.23 no.3
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• pp.61-67
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• 2005

Since lead (Pb)-free solders for electronics have higher melting points than that of eutectic Sn-Pb solder, they need higher soldering temperatures. In order to decrease the soldering temperature we tried to coat Sn-Bi layer on $Sn-3.5\%Ag$ solder by electroplating, which applies the mechanism of transient liquid phase bonding to soldering. During heating Bi will diffuse into the $Sn-3.5\%Ag$ solder and this results in decreasing soldering temperature. As bonding samples, the 1608 capacitor electroplated with Sn, and PCB, its surface was finished with electroless-plated Ni/Au, were selected. The $Sn-95.7\%Bi$ coated Sn-3.5Ag was supplied as a solder between the capacitor and PCB land. The samples were reflowed at $220^{\circ}C$, which was lower than that of normal reflow temperature, $240\~250^{\circ}C$, for the Pb-free. As experimental result, the joint of $Sn-95.7\%Bi$ coated Sn-3.5Ag showed high shear strength. In the as-reflowed state, the shear strength of the coated solder showed 58.8N, whereas those of commercial ones were 37.2N (Sn-37Pb), 31.4N (Sn-3Ag-0.5Cu), and 40.2N (Sn-8Zn-3Bi). After thermal shock of 1000 cycles between $-40^{\circ}C$ and $+125^{\circ}C$, shear strength of the coated solder showed 56.8N, whereas the previous commercial solders were in the range of 32.3N and 45.1N. As the microstructures, in the solder $Ag_3Sn$ intermetallic compound (IMC), and along the bonded interface $Ni_3Sn_4$ IMC were observed.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.401-407
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• 2010

We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.33-33
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• 2007

SoP-L 공정은 유전율이 상이한 재료를 이용하여 PCB 공정이 가능하고 다른 packaging 방법에 비해 공정 시간과 비용이 절약되는 잠정이 있다. 본 연구에서는 SoP-L 기술을 이용하여 Si 기판의 함몰에 판한 공정의 안정도와 함몰 시 제작된 때턴의 특성의 변화에 대해 관찰 하였다. Si 기판의 함몰에 Active device를 이용하여 특성의 변화를 살펴보고 공정의 안정도를 확립하려 했지만 Active device는 측정 시 bias의 확보와 특성의 민감한 변화로 인해 비교적 측정이 용이하고 공정의 test 지표를 삼기 위해 passive device 를 구현하여 함몰해 보았다. Passive device 의 제작 과정은 Si 기판 위에 spin coating을 통해 PI(Poly Imide)를 10um로 적층한 후에 Cr과 Au를 seed layer로 증착을 하였다. 그리고 photo lithography 공정을 통하여 photo resister patterning 후에 전해 Cu 도금을 거쳐 CPW 구조로 $50{\Omega}$ line 과 inductor를 형성하였다. 제작 된 passive device의 함몰 전 특성 추출 data와 SoP-L공정을 통한 함몰 후 추출 data 비교를 통해 특성의 변화와 공정의 안정도를 확립하였다. 차후 안정된 SoP-L 공정을 이용하여 Active device를 함몰 한다면 특성의 변화 없이 size 룰 줄이는 효과와 외부 자극에 신뢰도가 강한 기판이 제작 될 것으로 예상된다.