• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권6호
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• pp.241-248
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• 2003

$Bi_{1.84}Pb_{0.34}Sr_{1.91}Ca_{2.03}Cu_{3.06}O_{10+\delta}$ high $T_{c}$ superconductors containing Ag as an additive were fabricated by a solid-state reaction method. The superconducting properties, such as the structural characteristics, the critical temperatures, the grain size and the image of mapping on the surface were investigated. Samples with Ag and Au of 50 wt% each were sintered at various temperature(820~$850^{\circ}C$). The structural characteristics, the microstructure of surface and the critical temperature with respect to the each samples were analyzed by XRD and SEM, EDS and four-prove methode respectively. The critical temperature showed the result which the Ag additive samples are higher than Au additive samples. The microstructure of the surface showed the tendency which the Ag additive samples become more minuteness than Au additive samples.

• 한국전기전자재료학회논문지
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• 제15권4호
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• pp.308-313
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• 2002

Samples with the norminal composition, $Bi_{2-x}Au_xSr_2CaCu_2O_{8+\delta}$ (x = 0, 0.05. 0.1, 0.15) were prepared by the solid-state reaction method. The superconducting properties, x-ray powder diffraction patterns, critical temperature and microstructure of surface were measured the samples. x-ray patterns show the single phase(2212) nature of the samples. But, the peaks of 2201 at $2\theta=30^{\circ}$ and Au peak at $2\theta=38.31^{\circ}$ are observed in the Au additive samples. The grain sire are enlarged with the increase of x. As the result of enlargement the grain size, the onset and offset critical temperature($T_c^{on}$,$T_c^{zero}$) increased with increase of x.

• Transactions on Electrical and Electronic Materials
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• 제4권3호
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• pp.1-4
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• 2003

The etching of Au thin films has been performed in an inductively coupled $CF_4 / Cl_2 / Ar$ plasma. The etch properties including etch rate and selectivity were examined as $CF_4$ content adds from o to $30\%$ to $Cl_2/Ar$ plasma. The $Cl_2/(Cl_2 + Ar)$ gas mixing ratio was fixed at $20\%$. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of -150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a $10\%$ additive $CF_4$ into $Cl_2/Ar$ gas mixture. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. The XPS analysis shows that the intensities of Ail peaks are changed, indicating that there is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point. However, etching products can be sputtered by Ar ion bombardment.

• 한국지구과학회지
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• 제35권4호
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• pp.259-266
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• 2014

폐 PCBs의 스크랩으로부터 염소-차아염소산염 용액을 이용하여 Au와 Ag를 친환경적이고 효과적으로 용출시키고자 하였다. PCBs에 Cu, Sn, Sb, Al, Ni, Pb, Au 등과 같은 유용금속이 함유되어 있는 것을 EDS 분석으로 확인하였다. 최대 Au 용출율은 1%의 광액농도, 2:1의 염산:차아염소산나트륨 그리고 2 M의 NaCl 농도조건이다. Au 회수율이 가장 높은 메타중아황산나트륨 농도는 3 M에서였다. 염소-차아염소산염이 폐 컴퓨터에 함유되어 있는 Au와 Ag를 효과적으로 용출시킬 수 있는 용매제 임을 그리고 메타중아황산나트륨이 Au를 간단하게 침전시킬 수 있는 첨가제임을 확인하였다.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.564-568
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• 2003

The etching of Au thin films have been performed in an inductively coupled CF$_4$/Cl$_2$/Ar plasma. The etch rates were measured as CF$_4$ contents added from 0 to 30 % to Cl$_2$/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. The highest etch rate of the Au thin film was 3700 $\AA$m/min at a 10% additive CF$_4$ into Cl$_2$/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment.

• Journal of Electrochemical Science and Technology
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• 제8권1호
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• pp.25-34
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• 2017

Concurrent electrocatalysis and sensing of hydrazine, sulfite ions, and nitrite ions in a mixture were studied using electrodes modified by electrodeposited Au nanostructures (NSs). The ${\beta}$-cyclodextrin-mixed silicate sol-gel composite was drop-casted on the electrode surface and nucleation guided by ${\beta}$-cyclodextrin occurred, followed by the electrodeposition of Au NSs. The additive, ${\beta}$-cyclodextrin, played an evident role as a structure-directing agent; thus, small raspberry-like Au NSs were obtained. The modified electrodes were characterized by surface characterization techniques and electrochemical methods. The Au NSs-modified electrodes effciently electrocatalyzed the oxidation of toxic molecules such as hydrazine and sulfite and nitrite ions even in the absence of any other electron transfer mediator or enzyme immobilization. Well-resolved oxidation peaks along with decreased overpotentials were noticed during the electrooxidation process. The fabricated Au nanostructured electrode clearly distinguished the electrooxidation peaks of each of the three analytes from their mixture.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.190-194
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• 2002

In this study, the etching of Au thin films have been performed in an inductively coupled CF4/Cl2/Ar plasma. The etch properties were measured as the CF4 adds from 0 % to 30 % to the Cl2/(Cl2 + Ar) gas mixing ratio of 0.2. Other parameters were fixed at a rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a 10 % additive CF4 into Cl2/(Cl2 + Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. From x-ray photoelectron spectroscopy (XPS) analysis, the intensities of Au peaks are changed. There is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point and the etching products can be sputtered by Ar ion bombardment. We obtained the cleaned and steep profile.

• 대한수학회논문집
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• 제34권1호
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• pp.185-202
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• 2019

In this paper, we investigate many types of stability, like (uniform stability, exponential stability and h-stability) of the first order dynamic equations of the form $$\{u^{\Delta}(t)=Au(t)+f(t),\;\;t{\in}{\mathbb{T}},\;t>t_0\\u(t_0)=x{\in}D(A),$$ and $$\{u^{\Delta}(t)=Au(t)+f(t,u),\;\;t{\in}{\mathbb{T}},\;t>t_0\\u(t_0)=x{\in}D(A),$$ in terms of the stability of the homogeneous equation $$\{u^{\Delta}(t)=Au(t),\;\;t{\in}{\mathbb{T}},\;t>t_0\\u(t_0)=x{\in}D(A),$$ where f is rd-continuous in $t{\in}{\mathbb{T}}$ and with values in a Banach space X, with f(t, 0) = 0, and A is the generator of a $C_0$-semigroup $\{T(t):t{\in}{\mathbb{T}}\}{\subset}L(X)$, the space of all bounded linear operators from X into itself. Here D(A) is the domain of A and ${\mathbb{T}}{\subseteq}{\mathbb{R}}^{{\geq}0}$ is a time scale which is an additive semigroup with property that $a-b{\in}{\mathbb{T}}$ for any $a,b{\in}{\mathbb{T}}$ such that a > b. Finally, we give illustrative examples.

• 한국표면공학회지
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• 제56권6호
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• pp.386-392
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• 2023

In this work, we describe the reduction kinetics of gold nanoparticles synthesized by plasma discharge in aqueous solutions with varied voltages and precursor (HAuCl₄) concentrations. The reduction rate of [AuCl₄]^- was determined by introducing NaBr to the gold colloidal solution synthesized by plasma discharge, serving as a catalyst in the reduction process. We observed that [AuCl₄]^- was completely reduced when its characteristic absorption peak at 380 nm disappeared, indicating the absence of [AuCl₄]^- for ligand exchange with NaBr. The reduction rate notably increased with the rise in discharge voltage, attributable to the intensified plasma generated by ionization and excitation, which in turn accelerated the reduction kinetics. Regarding precursor concentration, a lower concentration was found to retard the reduction reaction, significantly influencing the reduction kinetics due to the presence of active H⁺ and H radicals. Therefore, the production of strong plasma with high plasma density was observed to enhance the reduction kinetics, as evidenced by optical emission spectroscopy.

• 한국광물학회지
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• 제27권3호
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• pp.115-124
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• 2014

금-은 함유 황화광물 정광으로부터 Au와 Ag를 용출시키기 위하여 황화광물 정광을 건식과 습식으로 전처리하였다. 전처리한 황화광물에 대하여 광물학적 연구와 티오요소 용출실험을 수행하였다. 평균입도와 등전위는 정광시료에서 보다 건식 전-처리 시료에서 낮게 나타났고, 건식 전-처리 시료 보다 습식 전-처리 시료에서 더 낮게 나타났다. XRD 분석결과, 습식 전-처리 시료에서만 비정질의 특성이 나타났다. 정광시료에서, 최대의 Au, Ag 용출인자는 1.0 g의 티오요소, 1.0 M의 황산제2철, 2.0 M의 황산 농도에서 그리고 $60^{\circ}C$의 용출온도에서였다. Au, Ag용출률은 건식 전-처리 시료에서 보다 습식 전-처리 시료에서 언제나 많이 그리고 빠르게 나타났다. 따라서, 향후 적당한 미분쇄 첨가제와 시간으로 전처리를 수행하고 비-시안 용매를 적용한다면 친환경적으로 Au, Ag를 용출시킬 수 있을 것으로 기대된다.