• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.6
• /
• pp.241-248
• /
• 2003

$Bi_{1.84}Pb_{0.34}Sr_{1.91}Ca_{2.03}Cu_{3.06}O_{10+\delta}$ high $T_{c}$ superconductors containing Ag as an additive were fabricated by a solid-state reaction method. The superconducting properties, such as the structural characteristics, the critical temperatures, the grain size and the image of mapping on the surface were investigated. Samples with Ag and Au of 50 wt% each were sintered at various temperature(820~$850^{\circ}C$). The structural characteristics, the microstructure of surface and the critical temperature with respect to the each samples were analyzed by XRD and SEM, EDS and four-prove methode respectively. The critical temperature showed the result which the Ag additive samples are higher than Au additive samples. The microstructure of the surface showed the tendency which the Ag additive samples become more minuteness than Au additive samples.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.4
• /
• pp.308-313
• /
• 2002

Samples with the norminal composition, $Bi_{2-x}Au_xSr_2CaCu_2O_{8+\delta}$ (x = 0, 0.05. 0.1, 0.15) were prepared by the solid-state reaction method. The superconducting properties, x-ray powder diffraction patterns, critical temperature and microstructure of surface were measured the samples. x-ray patterns show the single phase(2212) nature of the samples. But, the peaks of 2201 at $2\theta=30^{\circ}$ and Au peak at $2\theta=38.31^{\circ}$ are observed in the Au additive samples. The grain sire are enlarged with the increase of x. As the result of enlargement the grain size, the onset and offset critical temperature($T_c^{on}$,$T_c^{zero}$) increased with increase of x.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.3
• /
• pp.1-4
• /
• 2003

The etching of Au thin films has been performed in an inductively coupled $CF_4 / Cl_2 / Ar$ plasma. The etch properties including etch rate and selectivity were examined as $CF_4$ content adds from o to $30\%$ to $Cl_2/Ar$ plasma. The $Cl_2/(Cl_2 + Ar)$ gas mixing ratio was fixed at $20\%$. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of -150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a $10\%$ additive $CF_4$ into $Cl_2/Ar$ gas mixture. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. The XPS analysis shows that the intensities of Ail peaks are changed, indicating that there is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point. However, etching products can be sputtered by Ar ion bombardment.

• Journal of the Korean earth science society
• /
• v.35 no.4
• /
• pp.259-266
• /
• 2014

This study was carried out to find an environmental friendly and effective way to leach Au and Ag from scrap of Printed Circuit Boards (PCBs) using sodium-hypochlorite solution. In an EDS analysis, valuable metals such as Cu, Sn, Sb, Al, Ni, Pb and Au were all found in PCBs. The highest leaching rates obtained were 1% of pulp density with a chlorine:hypochlorite of 2:1 and a concentration of NaCl at 2M. The highest Au recovery was observed with the addition of sodium metabisulfite to make a 3M solution. It is confirmed that the leaching agent (chlorine-hypochlorite) could effectively leach Au and Ag from Printed Circuit Boards (scrap parts) and the additive reagent sodium metabisulfite could easily precipitate Au from the chlorine-hypochlorite solution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.7
• /
• pp.564-568
• /
• 2003

The etching of Au thin films have been performed in an inductively coupled CF$_4$/Cl$_2$/Ar plasma. The etch rates were measured as CF$_4$ contents added from 0 to 30 % to Cl$_2$/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. The highest etch rate of the Au thin film was 3700 $\AA$m/min at a 10% additive CF$_4$ into Cl$_2$/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment.

• Journal of Electrochemical Science and Technology
• /
• v.8 no.1
• /
• pp.25-34
• /
• 2017

Concurrent electrocatalysis and sensing of hydrazine, sulfite ions, and nitrite ions in a mixture were studied using electrodes modified by electrodeposited Au nanostructures (NSs). The ${\beta}$-cyclodextrin-mixed silicate sol-gel composite was drop-casted on the electrode surface and nucleation guided by ${\beta}$-cyclodextrin occurred, followed by the electrodeposition of Au NSs. The additive, ${\beta}$-cyclodextrin, played an evident role as a structure-directing agent; thus, small raspberry-like Au NSs were obtained. The modified electrodes were characterized by surface characterization techniques and electrochemical methods. The Au NSs-modified electrodes effciently electrocatalyzed the oxidation of toxic molecules such as hydrazine and sulfite and nitrite ions even in the absence of any other electron transfer mediator or enzyme immobilization. Well-resolved oxidation peaks along with decreased overpotentials were noticed during the electrooxidation process. The fabricated Au nanostructured electrode clearly distinguished the electrooxidation peaks of each of the three analytes from their mixture.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.190-194
• /
• 2002

In this study, the etching of Au thin films have been performed in an inductively coupled CF4/Cl2/Ar plasma. The etch properties were measured as the CF4 adds from 0 % to 30 % to the Cl2/(Cl2 + Ar) gas mixing ratio of 0.2. Other parameters were fixed at a rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a 10 % additive CF4 into Cl2/(Cl2 + Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. From x-ray photoelectron spectroscopy (XPS) analysis, the intensities of Au peaks are changed. There is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point and the etching products can be sputtered by Ar ion bombardment. We obtained the cleaned and steep profile.

• Communications of the Korean Mathematical Society
• /
• v.34 no.1
• /
• pp.185-202
• /
• 2019

In this paper, we investigate many types of stability, like (uniform stability, exponential stability and h-stability) of the first order dynamic equations of the form $$\{u^{\Delta}(t)=Au(t)+f(t),\;\;t{\in}{\mathbb{T}},\;t>t_0\\u(t_0)=x{\in}D(A),$$ and $$\{u^{\Delta}(t)=Au(t)+f(t,u),\;\;t{\in}{\mathbb{T}},\;t>t_0\\u(t_0)=x{\in}D(A),$$ in terms of the stability of the homogeneous equation $$\{u^{\Delta}(t)=Au(t),\;\;t{\in}{\mathbb{T}},\;t>t_0\\u(t_0)=x{\in}D(A),$$ where f is rd-continuous in $t{\in}{\mathbb{T}}$ and with values in a Banach space X, with f(t, 0) = 0, and A is the generator of a $C_0$-semigroup $\{T(t):t{\in}{\mathbb{T}}\}{\subset}L(X)$, the space of all bounded linear operators from X into itself. Here D(A) is the domain of A and ${\mathbb{T}}{\subseteq}{\mathbb{R}}^{{\geq}0}$ is a time scale which is an additive semigroup with property that $a-b{\in}{\mathbb{T}}$ for any $a,b{\in}{\mathbb{T}}$ such that a > b. Finally, we give illustrative examples.

• Journal of Surface Science and Engineering
• /
• v.56 no.6
• /
• pp.386-392
• /
• 2023

In this work, we describe the reduction kinetics of gold nanoparticles synthesized by plasma discharge in aqueous solutions with varied voltages and precursor (HAuCl₄) concentrations. The reduction rate of [AuCl₄]^- was determined by introducing NaBr to the gold colloidal solution synthesized by plasma discharge, serving as a catalyst in the reduction process. We observed that [AuCl₄]^- was completely reduced when its characteristic absorption peak at 380 nm disappeared, indicating the absence of [AuCl₄]^- for ligand exchange with NaBr. The reduction rate notably increased with the rise in discharge voltage, attributable to the intensified plasma generated by ionization and excitation, which in turn accelerated the reduction kinetics. Regarding precursor concentration, a lower concentration was found to retard the reduction reaction, significantly influencing the reduction kinetics due to the presence of active H⁺ and H radicals. Therefore, the production of strong plasma with high plasma density was observed to enhance the reduction kinetics, as evidenced by optical emission spectroscopy.

• Journal of the Mineralogical Society of Korea
• /
• v.27 no.3
• /
• pp.115-124
• /
• 2014

In order to leach Au and Ag from gold-silver bearing sulfide concentrate, the sulfide concentrate was ground in a ball mill for a dry pre-treatment and a wet pre-treatment process. Mineralogical studies and thiourea leaching experiments were carried out with the pre-treated sulfide concentrate. The results of the pre-treatment with the concentrate samples showed the mean particle size and iso-electrical potential was smaller in the dry pre-treatment sample than in the concentrate sample, and the contents was lower in the wet pre-treatment sample than in the dry pre-treatment sample. In XRD analysis, amorphous properties were only shown in the wet pretreatment sample. The results of the concentrate sample leaching experiments showed that the best Au, Ag leaching parameters were when the addition of thiourea was at a 1.0 g concentration, ferric sulfate was 1.0 M, sulfuric acid was 2.0 M and the leaching temperature was at $60^{\circ}C$. The Au, Ag leaching rate was always much greater and faster with the wet pre-treatment samples than with the dry pre-treatment samples. Accordingly, it is expected that more Au, Ag can be leached in an eco-friendly methodology using wet pre-treatment. The pre-treatment could be improved with an optimized grinding additive reagent and through researching grinding time in future non-cyanide processes.