• 제목/요약/키워드: Au addition

검색결과 227건 처리시간 0.023초

수소저장합금을 이용한 p-GaN ITO 투명전극과 Au 전극과의 특성비교 (Comparison of the Electrical and Optical Properties in between Transparent ITO and Au Electrodes using Hydrogen-storage Metals as Intermediate Layers)

  • 채승완;김철민;김은홍;이병규;신영철;김태근
    • 한국전기전자재료학회논문지
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    • 제21권7호
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    • pp.610-614
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    • 2008
  • In this work, the electrical and optical properties of the two different p-type GaN electrode schemes, ZnNi/ITO and ZnNi/Au, were compared each other, and applied to the top-emitting GaN/InGaN light-emitting diodes (LEDs). The ZnNi/ITO electrode showed much higher transmittance (90%) and slightly lower contact resistance $(1.27{\times}10^{-4}{\Omega}cm^2)$ than those (77%, $(2.26{\times}10^{-4}{\Omega}cm^2)$) of the ZnNi/Au at a wavelength of 460 nm. In addition, GaN LEDs having ZnNi/ITO showed accordingly higher light output power and luminous intensity than those having ZnNI/Au did at the current levels up to 1 A.

Al:Au 음극층을 이용한 양면발광(dual emission) 유기 EL 소자의 Al 두께별 특성 평가 (Characterization of Organic Light-Emitting Diode (OLED) with Dual Emission using Al:Au Cathode)

  • 이수환;김달호;양희두;김지헌;이곤섭;박재근
    • 반도체디스플레이기술학회지
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    • 제7권1호
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    • pp.47-51
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    • 2008
  • The Al:Au double-layer metal electrode for use in transparent, dual emission of organic light-emitting diode (OLED) was fabricated. The electrode of Al:Au metals with various thicknesses was deposited by the vacuum thermal evaporation technique. For Al thickness of 1 nm, a bottom luminance of $4880\;cd/m^2$ was observed at 8 V. Otherwise, top luminance of $2020\;cd/m^2$ were observed at 8 V. In addition, the threshold voltages of the electrodes were 2.2 V. It was forward that the inserting 1 nm Al between LiF and Au enhanced electron injection with tunneling effect.

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전력비 변화에 따른 Au Multilayer 위에 증착한 GZOB 박막의 특성 (Properties of the Various Power Ratio in GZOB/AU Multilayers)

  • 이종환;유현규;이규일;이태용;강현일;김응권;송준태
    • 한국전기전자재료학회논문지
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    • 제21권11호
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    • pp.977-980
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    • 2008
  • We investigated the effects of power ratio on the electrical and optical properties of Au based Ga-, B- codoped ZnO(GZOB) thin films. GZOB thin films were deposited on Au based poly carbonate(PC) substrate with various power in the range from 60 to 120 W by DC magnetron sputtering. In the result, GZOB films at 100 W exhibited a low resistivity value of $1.12\times10^{-3}\Omega-cm$, and a visible transmission of 80 % with a thickness of 300 nm. This result indicated that the addition of Ga and B in ZnO films leads to the improvement of conductivity and transparent. From the result, we can confirm the possibility of the application as transparent conductive electrodes.

A New Method to Control the Coverage of Irreversibly Adsorbing Sb on Au Electrode

  • 류호열;이충균
    • Bulletin of the Korean Chemical Society
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    • 제18권4호
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    • pp.385-389
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    • 1997
  • We report on the development of a new method to control the coverage of a metal film prepared with immersion method. An Sb species in solution adsorbed irreversibly at an open circuit potential (∼0.2 V) as an oxygenous Sb(Ⅲ) on a clean Au electrode, and the adsorbates showed voltammetric features in the potential range from 0.1 V to - 0.4 V. The full coverage of the Sb adsorbates was ∼0.45. On the contrary, the Sb species in solution did not adsorb at all on iodine-covered Au electrode surfaces, when the iodine coverages were more than 0.25. As the iodine coverage decreased below 0.25, however, the irreversible adsorption of Sb took place and the coverage of Sb increased accordingly. This electrochemical behavior has been interpreted as the penetration of the adsorbing Sb species in solution through open spaces among the iodine adlattices of coverages less than 0.25. With the manipulation of the iodine coverage, the controllable range of Sb coverage was from 0 to 0.45, i.e. the full coverage of Sb. In addition, the reversible deposition of Sb on an iodine-saturated Au electrode with voltammetric scan has been observed, which is contrasted with the adsorptive behavior of Sb on the clean Au electrode.

알칼리 수용액에서 산소환원반응에 대한 다공성 AuCu 덴드라이트 표면의 전기화학적 특성 평가 (Electrochemical properties of porous AuCu dendrite surface for the oxygen reduction reaction in alkaline solutions)

  • 김민영;이종원;조수연;박다정;정현민;이주열;이규환
    • 한국표면공학회지
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    • 제54권1호
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    • pp.1-11
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    • 2021
  • Porous dendrite structure AuCu alloy was formed using a hydrogen bubble template (HBT) technique by electroplating to improve the catalytic performance of gold, known as an excellent oxygen reduction reaction (ORR) catalyst in alkaline medium. The rich Au surface was maximized by selectively electrochemical etching Cu on the AuCu dendrite surface well formed in a leaf shape. The catalytic activity is mainly due to the synergistic effect of Au and Cu existing on the surface and inside of the particle. Au helps desorption of OH- and Cu contributes to the activation of O2 molecule. Therefore, the porous AuCu dendrite alloy catalyst showed markedly improved catalytic activity compared to the monometallic system. The porous structure AuCu formed by the hydrogen bubble template was able to control the size of the pores according to the formation time and applied current. In addition, the Au-rich surface area increased by selectively removing Cu through electrochemical etching was measured using an electrochemical calculation method (ECSA). The results of this study suggest that the alloying of porous AuCu dendrites and selective Cu dissolution treatment induces an internal alloying effect and a large specific surface area to improve catalyst performance.

열처리에 따른 p-GaN의 오믹접촉 특성에 관한 연구 (Study on characteristics of p-GaN ohmic contacts by rapid thermal annealing)

  • 김두수;이세준;성규석;강윤묵;차정호;김남화;정웅;조훈영;강태원;김득영;이연환
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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    • pp.310-313
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    • 2000
  • In this study, the Au/Ni and Au/Ni/Si/Ni layers prepared by electron beam evaporation were used to form ohmic contacts on p-type GaN. Before rapid thermal annealing, the current-voltage(I-V) characteristic of Au/Ni and Au/Ni/Si/Ni contact on p-type GaN film shows non-ohmic behavior. A Specific contact resistance as 3.4$\times$10$^{-4}$ Ω-$\textrm{cm}^2$ was obtained after 45$0^{\circ}C$-RTA. The Schottky barrier height reduction may be attributed to the presence of Ga-Ni and Ga-Au compounds, such as Ga$_4$Ni$_3$, Ga$_4$Ni$_3$, and GaAu$_2$ at the metal - semiconductor interface. The mixing behaviors of both Ni and Au have been studied by using X-ray photoelectron spectroscopy. In addition, X-ray diffraction measurements indicate that the Ni$_3$N, NiGa$_4$, Ni$_2$Si, and Ni$_3$Si$_2$ Compounds were formed at the metal-semiconductor interface.

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Au@TiO2 코어쉘 미세 입자의 합성 및 특성 평가 (Synthesis and Characterization of Au@TiO2 Core-Shell Microspheres)

  • 김순금;장하준;장재원;심재현;백성준
    • 한국전기전자재료학회논문지
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    • 제35권4호
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    • pp.392-397
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    • 2022
  • We present the structural and optical properties of Au@TiO2 core-shell microsphere structure prepared by a hydrothermal synthesis method. As a way to improve the efficiency of organic solar cells, the Au@TiO2 core-shell microsphere was synthesized to use the local surface plasmon resonance (LSPR) phenomenon. The synthesized results were confirmed to have the Au@TiO2 core-shell structure using a high-resolution transmission electron microscopy. An absorption was observed to occur at 527 nm belonging to the visible light region using a visible light spectroscopy, which supports the LSPR phenomenon. We suggest that the Au@TiO2 core-shell microsphere is highly likely to be applied to organic solar cells including dye-sensitized solar cells. In addition, we expect it to be widely used not only in the energy but also in the bio as well as in the environmental fields.

Al 및 SiN 박막 위에 형성된 TiW Under Bump Metallurgy의 스퍼터링 조건에 따른 Au Bump의 접착력 특성 (Effects of Sputtering Conditions of TiW Under Bump Metallurgy on Adhesion Strength of Au Bump Formed on Al and SiN Films)

  • 조양근;이상희;김지묵;김현식;장호정
    • 마이크로전자및패키징학회지
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    • 제22권3호
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    • pp.19-23
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    • 2015
  • 본 연구에서는 COG (Chip On Glass) 패키지 적용을 위해 Au 범프를 전기도금 공정을 사용하여 Al/Si wafer와 SiN/Si wafer 위에 TiW/Au 구조를 갖는 두 종류의 Au범프 시료를 제작하였다. UBM (Under Bump Metallurgy) 물질로서 TiW 박막을 스퍼터링 방법으로 증착하였으며 스퍼터링 입력 파워(500~5000 Watt)에 따른 박리 현상을 관찰하였다. 안정된 계면 접착을 나타내는 스퍼터링 파워는 1500 Watt임을 확인 할 수 있었다. 또한 SAICAS (Surface And Interfacial Cutting Analysis System) 장비를 사용하여 기판 종류에 따른 Au Bump의 접착력을 조사하였다. TiW 증착 조건은 스퍼터링 파워를 1500 Watt로 고정하였다. TiW/Au 계면의 접착력은 두 종류의 wafer (Al/Si과 SiN/Si wafers)에 관계없이 오차 범위 안에서 비슷한 접착력을 보여주었으나, TiW UBM 스퍼터링 박막 계면에서의 접착력은 하부 박막인 Al 금속과 SiN 비금속 박막에서의 접착력 차이가 약 2.2배 크게 나타났다. 즉, Al/Si wafer와 SiN/Si wafer위에 증착된 TiW의 접착력은 각각 0.475 kN/m와 0.093 kN/m 값을 나타내었다.

저품위 금합금의 PbO와 CaO를 이용한 건식 정련 공정 (Pyrometallurgy Process for a Low Graded Gold Alloy with PbO and CaO)

  • 송정호;송오성
    • 한국산학기술학회논문지
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    • 제18권4호
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    • pp.608-613
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    • 2017
  • 본 연구에서는 저품위인 35wt% 금합금에 대해 80.0wt% 이상의 Au를 얻기 위한 건식 정련 공정을 제안하였다. Au35wt%-Ag5wt%-Cu60wt%의 조성을 가진 금합금에 대해 PbO/(PbO+CaO)의 혼합비를 각각 0~1로 변화시키고 플럭스/금합금의 무게비는 1/2로 하여 $1200^{\circ}C$-5시간의 열처리를 진행하였다. 이때 공정 전, 후 시료의 조성 변화는 energy dispersive X-ray spectroscopy(EDS)로 확인하고, 공정이 완료된 후 분리된 플럭스 금속 원소 성분은 time of flight secondary ion mass spectromerty(ToF-SIMS)로 확인하였다. EDS분석 결과 플럭스의 비율이 1(PbO 단일)인 경우 Au의 함량이 35.0wt%에서 86.7wt%로 가장 크게 향상되었고, 다른 플럭스 조성의 경우도 84wt% 이상으로 정련이 가능하였다. 또한 2/3 혼합비의 플럭스에서 Ag가 플럭스부로 빠져나가는 손실이 가장 적었다. 플럭스부의 ToF-SIMS 분석 결과 플럭스의 비율이 1, 0 일 때 $Au^+$의 특성 피크의 강도가 각각 349, 37로 측정되었다. Au의 손실을 고려하였을 때 CaO 단일 플럭스의 사용이 더 유리할 수 있었으나, 이 정도의 신호강도는 무시할 수 있는 정도로 판단되었다. 따라서 혼합플럭스를 이용한 건식 열처리를 통해 효과적인 금의 정련이 가능하여 경제적인 습식제련의 전처리 공정으로 사용될 수 있음을 확인하였다.

고대신라의 금속기술 연구 (A Study of Metal Technology in Ancient Silla Dynasity)

  • 강성군;조종수
    • 한국표면공학회지
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    • 제8권1호
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    • pp.1-9
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    • 1975
  • The crorosion film of gilt bronz, silver and iron objects, which were excaved from Ancient Tomb of Silla Dynasty, was removed by the electrolytic reduction process. These metallic objects were mainly investigated for microstructure, designs and gilting film etc. Most iron objects might be made by hot forging process. The cold extrusion technique might be used for gold and silver objects, in addition to an amalgam method might be applied for the gilting Au film on Cu-alloy surface. For the gilting on glass surface, first, a Cu alloy was cladded on glass , next, Au-film was obtained on the Cu-ally by the amagum method.

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