• 한국광학회:학술대회논문집
• /
• 한국광학회 2006년도 하계학술발표회 논문집
• /
• pp.137-138
• /
• 2006

• Composites Research
• /
• 제30권2호
• /
• pp.108-115
• /
• 2017

$SiC_f/SiC$ 복합체를 제조하는 공정들 중에서 화학기상 침착(Chemical Vapor Infiltration) 공정은 저온에서 실형상이나 복잡한 형상을 제조할 수 있고, 기지상의 미세구조를 제어할 수 있으며, 고순도를 지닌 $SiC_f/SiC$ 복합체를 제조할 수 있는 효과적인 방법이다. 그러나 잔유 기공을 가지며 공정시간이 긴 단점이 있다. 기공률을 줄이고 효과적인 기지상 채움을 위하여 휘스커(whisker) 성장과 기지상 채움공정을 연속하여 수행하는 whisker growing assisted 화학기상침착공정이 개발되었다. 기지상 채움 전에 프리폼에 SiC 휘스커를 미리 성장시키면 섬유간이나 번들간에 존재하는 큰 기공을 작게 분할하여 기지상 채움 효율을 증진할 수 있다. 본 논문에서는 $SiC_f/SiC$ 복합체 제조를 위한 화학기상침착법공정의 기초와 일반적인 화학기상침착공정과 whisker growing assisted 화학기상침착공정으로 제조한 $SiC_f/SiC$ 복합체의 실험결과들을 간략히 서술하였다.

• ETRI Journal
• /
• 제27권5호
• /
• pp.545-550
• /
• 2005

We have carried out the fabrications of a barrier layer on a polyethersulfon (PES) film and organic light emitting diode (OLED) based on a plastic substrate by means of atomic layer deposition (ALD). Simultaneous deposition of 30 nm $AlO_x$ film on both sides of the PES film gave a water vapor transition rate (WVTR) of $0.062 g/m^2/day (@38^{\circ}C,\;100%\;R.H.)$. Further, the double layer of 200 nm $SiN_x$ film deposited by plasma enhanced chemical vapor deposition (PECVD) and 20 nm $AlO_x$ film by ALD resulted in a WVTR value lower than the detection limit of MOCON. We have investigated the OLED encapsulation performance of the double layer using the OLED structure of ITO / MTDATA (20 nm) / NPD (40 nm) / AlQ (60 nm) / LiF (1 nm) / Al (75 nm) on a plastic substrate. The preliminary life time to reach 91% of the initial luminance $(1300 cd/m^2)$ was 260 hours for the OLED encapsulated with 100 nm of PECVD-deposited $SiN_x$ and 30 nm of ALD-deposited $AlO_x$.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
• /
• pp.66.1-66.1
• /
• 2010

Microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD). It has been found that energetically positive ion and atomic hydrogen collision on to growing surface have important effects on increasing growth rate, and atomic hydrogen density is necessary for the increasing growth rate correspondingly, while keeping ion bombardment is less level. Since the plasma potential is determined by working pressure, the ion energy can be reduced by increasing the deposition pressure of 700-1200 Pa. Also, correlation of the growth rate and crystallinity with deposition parameters such as working pressure, hydrogen flow rate and input power were investigated. Consequently an efficiency of 7.9% was obtained at a high growth rate of 0.92 nm/s at a high RF power 300W using a plasma-enhanced chemical vapor deposition method (27.12MHz).

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.304.1-304.1
• /
• 2016

We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

• 한국세라믹학회지
• /
• 제44권10호
• /
• pp.580-584
• /
• 2007

The ZrC layer instead of SiC layer is a critical and essential layer in TRISO coated fuel particles since it is a protective layer against diffusion of fission products and provides mechanical strength for the fuel particle. In this study, we carried out computational simulation before actual experiment. With these simulation results, Zirconium carbide (ZrC) films were chemically vapor deposited on $ZrO_2$ substrate using zirconium tetrachloride $(ZrCl_4),\;CH_4$ as a source and $H_2$ dilution gas, respectively. The change of input gas ratio was correlated with growth rate and morphology of deposited ZrC films. The growth rate of ZrC films increased as the input gas ratio decreased. The microstructure of ZrC films was changed with input gas ratio; small granular type grain structure was exhibited at the low input gas ratio. Angular type structure of increased grain size was observed at the high input gas ratio.

• 한국표면공학회지
• /
• 제47권6호
• /
• pp.347-353
• /
• 2014

We present a synthesis of single-walled carbon nanotubes(SWNTs) for enhancement of parallel-alignment and density using chemical vapor deposition with methane feed gas. As-purchased ST-cut quartz substrates were heat-treated and line-patterned by electron-beam lithography in order to grow SWNTs with parallel alignment. We investigated the effects of various synthesis parameters such as catalyst oxidation, reduction, and synthesis conditions in order to enhance both tube density and degree of parallel alignment. The condition of $1{\AA}$ of Fe catalyst film, atmospheric oxidation at $750^{\circ}C$ for 10 min, reduction under 400 Torr for 5 min, and growth at $865^{\circ}C$ under 300 Torr yields $33tubes/10{\mu}m$, which is the highest tube density with parallel alignment. Based on the results of atomic force microscope and Raman spectroscopy, it was found that SWNTs have diameter range of 0.8-2.0 nm. We believe that the present work would contribute to the development of SWNTs-based flexible functional devices.

• 한국재료학회지
• /
• 제13권8호
• /
• pp.497-502
• /
• 2003

Crystallographic characteristics and interfacial structures of $Al_2$$O_3$and $ZrO_2$dielectric films prepared by atomic layer chemical vapor deposition (ALCVD) were investigated at atomic scale by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS)/electron energy-loss spectroscopy (EELS) coupled with a field-emission transmission electron microscope. The results obtained from cross-sectional and plan-view specimens showed that the $Al_2$$O_3$film was crystallized by annealing at a high temperature and its crystal system might be evaluated as either cubic or tetragonal phase. Whereas the $ZrO_2$film crystallized during deposition at a low temperature of ∼$300^{\circ}C$ was composed of both tetragonal and monoclinic phase. The interfacial thickness in both films was increased with the increased annealing temperature. Further, the interfacial structures of X$ZrO_2$$O_3$and $ZrO_2$films were discussed through analyses of EDS elemental maps and EELS spectra obtained from the annealed films, respectively.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.391-392
• /
• 2012

Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7％) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99％) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

• 멤브레인
• /
• 제15권3호
• /
• pp.198-205
• /
• 2005

방사능 오염도 측정에 사용하기 위한 이중구조 고분자막이 폴리설폰과 세륨활성화된 이트륨실리케이트(CAYS)를 이용하여 제조되었다. 제조된 막은 순수 고밀도 고분자 지지층과 이에 제막된 고분자 용액의 상전환 공정에 의해 고형화된 CAYS 함침 활성층의 이중구조로 구성된다. 제막공정에서 대기방치 공정이 생략되었을 때 CAYS를 포함하는 활성층은 전형적인 비대칭 구조를 지니며, CAYS 입자들이 고분자 구조 사이에 박혀있는 형상을 지닌다. 제막공정에서 대기에 방치하는 시간이 증가할수록 막의 형상은 스폰지 구조를 띠며 CAYS는 고분자 구조로부터 분리되어 막 내부에 셀 같은 공간에 밀집되어 존재함을 보였다. 한편, 두 충 사의 계면형상은 고분자 고형화 과정에서의 상전환 속도와 밀접한 관련되었으며, 대기방치 시간의 증가에 따라 계면의 구분이 뚜렷하게 나타나지 않았다. 방사능 탐지 특성에서 스폰지 구조를 지니는 막의 고분자 구조는 방사성핵종이 통과할 수 없는 밀집된 형상을 지니면서 탐지효율의 감소를 초래하는 것으로 나타났다.