• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.430-430
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• 2007

In this study, the nematic liquid crystal (NLC) alignment effects treated on the ZnO thin film layers using ion beam irradiation were successfully studied for the first time. The ZnO thin films were deposited on indium-tin-oxide (ITO) coated glass substrates by rf-sputter and The ZnO thin films were deposited at the three kinds of rf power. The used DuoPIGatron type ion beam system, which can be advantageous in a large area with high density plasma generation. The ion beam parameters were as follows: energy of 1800 eV, exposure time of 1 min and ion beam current of $4\;mA/cm^2$ at exposure angles of $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, and $60^{\circ}$. The homogeneous and homeotropic LC aligning capabilities treated on the ZnO thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be achieved. The low pretilt angle for a NLC treated on the ZnO thin film surface with ion beam irradiation for all incident angles was measured. The good LC alignment treated on the ZnO thin film with ion beam exposure at rf power of 150 W can be measure. For identifying surfaces topography of the ZnO thin films, atomic force microscopy (AFM) was introduced. After ion beam irradiation, test samples were fabricated in an anti-parallel configuration with a cell gap of $60{\mu}m$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.67-74
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• 2002

A phosphor for Plasma Display Panel, BaMgAl$_{10}$ O$_{17}$ :Eu$^{2+}$, showing a blue emission band at about 450nm was prepared by a solid-state reaction using BaCO$_3$, $Al_2$O$_3$, MgO, Eu$_2$O$_3$ as starting materials wish flux AlF$_3$. The study of the behaviour of Eu in BAM phosphor was carried out by the photoluminescence spectra and the Rietveld method with X-ray and neutron powder diffraction data to refine the structural parameters such as lattice constants, the valence state of Eu, the preferential site of Mg atom and the site fraction of each atom. The phenomenon of the concentration quenching was abound 2.25~2.3wt% of Eu due to a decrease in the critical distance for energy transfer of inter-atomic Eu. Through the combined Rietveld refinement, R-factor, R$_{wp}$, was 8.11%, and the occupancy of Eu and Mg was 0.0882 and 0.526 at critical concentration. The critical distance of Eu$^{2+}$ in BAM was 18.8$\AA$ at 2.25% Eu of the concentration quenching. Furthermore, c/a ratio was decreased to 3.0wt% and no more change was observed over that concentration. The maximum entropy electron density was found that the modeling of $\beta$-alumina structure in BaMgAl$_{10}$ O$_{17}$ :Eu$^{2+}$correct coincided showing Ba, Eu, O atoms of z= 1/4 mirror plane.e.ane.e.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.285-285
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• 2013

Recently, hexagonal boron nitride (h-BN), which is III-V compound of boron and nitride by strong covalent sp2 bonds has gained great interests as a 2 dimensional insulating material since it has honeycomb structure with like graphene with very small lattice mismatch (1.7%). Unlike graphene that is semi-metallic, h-BN has large band gap up to 6 eV while providing outstanding properties such as high thermal conductivity, mechanical strength, and good chemical stability. Because of these excellent properties, hBN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Low pressure and atmospheric pressure chemical vapor deposition (LPCVD and APCVD) methods have been investigated to synthesize h-BN by using ammonia borane as a precursor. Ammonia borane decomposes to polyiminoborane (BHNH), hydrogen, and borazine. The produced borazine gas is a key material that is a used for the synthesis of h-BN, therefore controlling the condition of decomposed products from ammonia borane is very important. In this paper, we optimize the decomposition of ammonia borane by investigating temperature, amount of precursor, and other parameters to fabricate high quality monolayer h-BN. Synthesized h-BN is characterized by Raman spectroscopy and its absorbance is measured with UV spectrophotometer. Topological variations of the samples are analyzed by atomic force microscopy. Scanning electron microscopy and Scanning transmission Electron microscopy are used for imaging and analysis of structures and surface morphologies.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.37 no.12
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• pp.1453-1463
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• 2013

In this study, we investigated the effect of the indenter geometry on the crack characteristics by indentation cracking test and FEA. We conducted various cohesive finite element simulations based on the findings of Lee et al. (2012), who examined the effect of cohesive model parameters on crack size and formulated conditions for crack initiation and propagation. First, we verified the FE model through comparisons with experimental results that were obtained from Berkovich and Vickers indentations. We observed whether nonsymmetrical cracks formed beneath the surface during Berkovich indentation via FEA. Finally, we examined the relation between the crack size and the number of cracks. Based on this relation and the effect of the indenter angle on the crack size, we can predict from the crack size obtained with an indenter of one shape (such as Berkovich or Vickers) the crack size for an indenter of different shape.

• Applied Chemistry for Engineering
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• v.23 no.2
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• pp.153-156
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• 2012

In this study, two different methods were studied to prepare Pt-Pd catalysts for direct methanol fuel cells in order to enhance the electrochemical efficiency. The catalysts were compared with simultaneously deposited Pt-Pd and sequentially deposited Pt-Pd. The electrocatalysts contained 20 wt% of metal loading on carbon black and 1 : 2 of Pt : Pd atomic ratio. Electrochemical properties of the catalysts were compared by measuring cyclic voltammetries and average sizes and lattice parameters were measured by transmission electron microscopy images and x-ray diffraction. As a result, sequentially deposited Pt-Pd/C catalysts showed better electrochemical properties than those of simultaneously deposited Pt-Pd/C catalysts.

• Asian-Australasian Journal of Animal Sciences
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• v.32 no.6
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• pp.896-903
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• 2019

Objective: Qianbei-Pockmarked goats are affected by a disorder locally referred to as 'Ruanguzheng Disorder', which is characterized by emaciation, lameness, muscular relaxation, stiffness of the extremities, and abnormal curvatures of the long bones. Our objective was to determine the relationship between the disorder and phosphorus deficiency. Methods: Tissue samples were collected from affected and healthy animals, while soil and herbage samples were collected from affected and healthy pastures. Biochemical parameters were determined using an automatic biochemical analyzer (OLYMPUS AU 640, Olympus Optical Co., Tokyo, Japan). Mineral contents in soil, forage, and tissue were determined using a Perkin-Elmer AAS5000 atomic absorption spectrophotometer (Perkin-Elmer, Norwalk, CT, USA). Results: The results showed that phosphorus contents in herbages from affected pastures were markedly lower than those from healthy areas (p<0.01), and the ratio of calcium to phosphorus in the affected herbages was 12.93:1. The phosphorus contents of wool, blood, tooth, and bone from affected animals were also markedly lower than those from healthy animals (p<0.01). Serum phosphorus values in affected animals were much lower than those in healthy animals, while serum alkaline phosphatase values from affected animals were markedly higher than those from healthy animals (p<0.01). Inorganic phosphorus values from affected animals were approximately half of that in the control group. Supplementation of disodium hydrogen phosphate prevented and cured the disorder. Conclusion: This study demonstrates that Ruanguzheng disorder in Qianbei-Pockmarked goats is primarily caused by phosphorus deficiencies in herbage due to fenced pastures and natural habitat fragmentation.

• Nuclear Engineering and Technology
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• v.53 no.1
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• pp.216-233
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• 2021

In this work, Rhizophora spp. particleboard phantoms were made using SPI-based adhesives, modified with sodium hydroxide and itaconic acid polyamidoamine-epichlorohydrin (0, 5, 10, and 15 wt%). An X-ray computed tomography (CT) imaging system was used to ascertain the CT numbers and density distribution profiles of the particleboards. The SPI-based/NaOH/IA-PAE/Rhizophora spp. particleboard phantoms with 15 wt% IA-PAE addition level had the highest solid content, flexural strength, flexural modulus, and internal bonding strength of 36.06 ± 1.08%, 18.61 ± 0.38 Nmm^-2, 7605.76 ± 0.89 Nmm^-2, and 0.463 ± 0.053 Nmm^-2, respectively. The moisture content, mass density, water absorption, and dimensional stability were 6.93 ± 0.27%, 0.962 ± 0.037 gcm^-3, 22.36 ± 2.47%, and 10.90 ± 0.86%, respectively. The results revealed that the mass attenuation coefficients and effective atomic number values within the 16.59-25.26 keV photon energy region, were close to the calculated XCOM values in water, with a p-value of 0.077. Moreover, the CT images showed that the dissimilarities in the discrepancy of the profile density decreased as the IA-PAE concentrations increased. Therefore, these results support the appropriateness of the SPI-based/NaOH/IA-PAE/Rhizophora spp. particleboard with 15 wt% IA-PAE adhesive as a suitable tissue-equivalent phantom material for medical health applications.

• Progress in Medical Physics
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• v.31 no.4
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• pp.145-152
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• 2020

Purpose: In ionization-chamber dosimetry for high-dose-rate electron beams-above 20 mGy/pulse-the ion-recombination correction methods recommended by the International Atomic Energy Agency (IAEA) and the American Association of Physicists in Medicine (AAPM) are not appropriate, because they overestimate the correction factor. In this study, we suggest a practical ion-recombination correction method, based on Boag's improved model, and apply it to reference dosimetry for electron beams of about 100 mGy/pulse generated from an electron linear accelerator (LINAC). Methods: This study employed a theoretical model of the ion-collection efficiency developed by Boag and physical parameters used by Laitano et al. We recalculated the ion-recombination correction factors using two-voltage analysis and obtained an empirical fitting formula to represent the results. Next, we compared the calculated correction factors with published results for the same calculation conditions. Additionally, we performed dosimetry for electron beams from a 6 MeV electron LINAC using an Advanced Markus^® ionization chamber to determine the reference dose in water at the source-to-surface distance (SSD)=100 cm, using the correction factors obtained in this study. Results: The values of the correction factors obtained in this work are in good agreement with the published data. The measured dose-per-pulse for electron beams at the depth of maximum dose for SSD=100 cm was 115 mGy/pulse, with a standard uncertainty of 2.4%. In contrast, the k_s values determined using the IAEA and AAPM methods are, respectively, 8.9% and 8.2% higher than our results. Conclusions: The new method based on Boag's improved model provides a practical method of determining the ion-recombination correction factors for high dose-per-pulse radiation beams up to about 120 mGy/pulse. This method can be applied to electron beams with even higher dose-per-pulse, subject to independent verification.

• Korean Journal of Metals and Materials
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• v.48 no.4
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• pp.320-325
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• 2010

NiO thin films were deposited by radio frequency magnetron sputtering on glass substrates. The processing variables of the oxygen content, sputtering power, and pressure were varied to investigate the electrical properties and surface morphology of NiO films. It was found that the resistivity of NiO films at $1.22{\times}10^2{\Omega}cm$ (2.5% $O_2$ in Ar gas) was greatly reduced to$ 2.01{\times}10^{-1}$ ${\Omega}cm$ (100% oxygen) under a typical sputtering condition of 6 mTorr and 200 watts. In an effort to observe the resistivity variances, the sputtering power was varied from 80 to 200 watts at 6 mTorr with 100% $O_2$. However, the resistivity of the NiO films changed in the range of $10^{-1}-10^{-2}$ ${\Omega}cm$. The dependence on the sputtering power was therefore found to be weak in this experiment. When the sputtering pressure was changed from 3 to 60 mTorr at 200 watts with 100% $O_2$, the resistivity of the NiO films showed the lowest value of $5.8{\times}10^{-3}$ ${\Omega}cm$ at 3 mTorr, which is close to that of commercial ITO films (${\sim}10^{-4}$ ${\Omega}cm$). As the sputtering pressure increased, the resistivity also increased to 4.67 cm at 60 mTorr. The surface morphology of the NiO films was also checked by Atomic Force Microscopy. It was found that the RMS surface roughness values ranged from 0.6 to 1.5 nm and thtthe dependence on the sputtering parameters was weak.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.342-347
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• 2011

We fabricated the silicon nanodots using the low pressure chemical vapor deposition technique to investigate their electron field emission characteristics. Atomic force microscope measurements performed for the silicon nanodot samples having various process parameters, such as, deposition time and deposition pressure, revealed that the silicon nanodots with an average size of 20 nm, height of 5 nm, and density of $1.3\;{\times}\;10^{11}\;cm^{-2}$ were easily formed. Electron field emission measurements were performed with the silicon nanodot layer as the cathode electrode. The current-voltage curves revealed that the threshold electric field was as low as $8.3\;V/{\mu}m$ and the field enhancement factor reached as large as 698, which is compatible with the silicon cathode tips fabricated by other techniques. These electron field emission results point to the possibility of using a silicon-based light source for display devices.