• 제목/요약/키워드: Atmospheric deposition

검색결과 459건 처리시간 0.026초

Investigation of Giant Magnetoresistance in Vacuum-Annealed NiFe/Ag Discontinuous Multilayers

  • Park, Chang-Min;Kim, Young-Eok;Shin, Kyung-Ho
    • Journal of Magnetics
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    • 제2권2호
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    • pp.50-54
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    • 1997
  • The vacuum-annealed Ni80Fe20/Ag discontinuous multilayers were found to show giant magnetoresistive behaviors comparable to those of corresponding multilayers annealed at atmospheric pressure in a mixture of H2 and Ar. This vacuum-annealing process will offer potential advantages, enabling a continuous batch process from the deposition to the annealing. Their giant magnetoresistive behaviors were attributed to the magnetostatic coupling that are induced at the edges of the discontinuous magnetic grains. We also present our results about the multilayer patterned into a basic device for the magnetic field sensor.

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서울지역 1990년대 중반 및 2000년대 초반 산성오염물질 변화 특성 (Characteristics of Acidic Air Pollutants between the Middle of 1990s and the Early of 2000s in Seoul)

  • 강충민;이학성;강병욱;이상권;선우영;최영민
    • 한국대기환경학회:학술대회논문집
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    • 한국대기환경학회 2002년도 추계학술대회 논문집
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    • pp.253-254
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    • 2002
  • 대기중 인위적 및 자연적 발생원에 기인하는 SO$_2$, NOx 및 HCs는 균일반응과 불균일반응을 통해서 산화되어 산성가스와 에어로졸을 형성한다 대부분의 산성물질은 대기중 구름, 안개, 에어로졸 액적중에서 균일반응을 통해 생성되며, 입자표면에서 가스상 물질의 불균일반응은 에어로졸 농도가 높은 배출원근처에서 국한된다. 이와 같은 반응을 통해 생성된 산성오염물질 및 전구물질은 건성 및 습성침적 (dry and wet deposition)을 통해 지표면에 침강되어 생태계에 직ㆍ간접적인 영향을 줄뿐만 아니라 산성우 및 동식물의 호흡기 질환에 중요한 영향을 미친다. (중략)

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대기 중 PM-10 오염원의 정량적 기여도 추정을 위한 진보된 수용방법론의 응용 (Application of Advanced Receptor Methodology for Estimating of Quantitative Source Contribution of Ambient PM-10 in Suwon)

  • 황인조;김동술
    • 한국대기환경학회:학술대회논문집
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    • 한국대기환경학회 2002년도 추계학술대회 논문집
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    • pp.187-188
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    • 2002
  • 다양한 오염원에서 배출된 오염물질은 가시광선 산란에 의한 시정악화 (visibility impairment), 산성 침착 (acidic deposition) 등과 같은 지역규모 (regional scale)의 대기오염문제와 오존층 파괴, 온실효과 등과 같은 지구규모 (global scale)의 대기오염문제를 야기 시켰으며, 더 나아가 인간의 건강과 복지에도 심각한 악영향을 미치고 있다. 이와 같은 문제는 환경에 대한 관심을 고조시켰으며 이러한 대기오염문제를 해결하기 위한 기술적, 경제적, 행정적 투자와 많은 연구들을 증대시키는 결과를 초래하였을 뿐만 아니라 대기오염 피해로 인한 건강 및 복지손실을 최소화하고 산업체의 경제적 손실을 최소화하기 위해 합리적인 각종 대기환경 관리기술이 도입되고 개발될 필요성 또한 대두되었다. (중략)

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HCl분위기에서 증기열처리된 BPSG 막의 평탄화효과에 관한 연구 (Planarization Effect of Steam Densified BPSG Film in HCl Atmosphere)

  • 김동현
    • 한국세라믹학회지
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    • 제23권4호
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    • pp.55-61
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    • 1986
  • Phosphosilicate glass(PSG) films have been used as fusable deposited dielectrics in silicon gate MOS integrated circuits. But in this experiment BPSG(borophosphosilicate glass) will be optimized for more efficient utilization of the reactants. The BPSG films were deposited on silicon wafers by the oxidation of the hydrides at 430$^{\circ}$C in conventional atmospheric-pressure chemical-vapor-deposition (CVD) systems. Physical and chemical properties of CVD BPSG films have been characterized both for as-deposited and for fused films The. relationship between deposited BPSG film composition and infra-red absorption solution etch rate and fusion temperature is discussed and examples of BPSG composition that can be fused at 900~95$0^{\circ}C$ and 800~85$0^{\circ}C$ are given. In addition to having lower fusion temperature than PSG films BPSG films have lower as-deposited intrinsic tensile stress and low aqueous chemical etch rate they have been considered for applications where these characteristics are advantageous.

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CVD법으로 합성된 알루미나 박막 및 분말의 열처리에 따른 특성 (Properties of the Chemically Vapor Deposited Alumina Thin Film and Powder on Heat Treatment)

  • 최두진;정형진
    • 한국세라믹학회지
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    • 제26권2호
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    • pp.235-241
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    • 1989
  • A study on the APCVD(atmospheric pressure chemical vapor deposition) Al2O3 was done by using the aluminum-tri-isopropoxide/N2 reaction system at 40$0^{\circ}C$. When the flow rate of the carrier gas(N2) was over 2SLPM, heterogeneous reaction was observed. However, when the flow rate of the carrier gas was below 2SLPM, a porously deposited film or powder formation was observed. The film formed by a heterogeneous reaction was optically dense. The dense film is thought to be a kind of a hydrated alumina. After a thermal treatment of the film in the range of temperature from $600^{\circ}C$ to 1, 20$0^{\circ}C$, properties of the film seems to be changed due to dehydration and densification process. In the case of the powder on heat treatment(600~1, 20$0^{\circ}C$), both a phase transformation and the change of OH peak was observed.

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CVD에 의한 균일한 다결정 3C-SiC 박막 결정 성장 (Crystal growth of uniform 3C-SiC thin films by CVD)

  • 윤규형;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.234-235
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    • 2008
  • The surface flatness of heteroepitaxially grown 3C-SiC thin films is a key factor affecting electronic and mechanical device applications. This paper describes the surface flatness of poly(polycrystalline) 3C-SiC thin films according to Ar flow rates and the geometric structures of reaction tube, respectively. The poly 3C-SiC thin film was deposited by APCVD (Atmospheric pressure chemical vapor deposition) at $1200^{\circ}C$ using HMDS (Hexamethyildisilane : $Si_2(CH_3)_6)$ as single precursor, and 1~10 slm Ar as the main flow gas. According to the increase of main carrier gas, surface fringes and flatness are improved. It shows the distribution of thickness is formed uniformly.

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충북 청원군 강수의 산성도 연구 (An Acidity Study of Precipitation Observed in Chongwon, Choongbook)

  • 정용승;김태군
    • 한국환경과학회지
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    • 제1권1호
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    • pp.29-39
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    • 1992
  • A study on acidity in precipitation was carried out during May 1990 - April 1991 at two sites in Chongwon, Choongbook. We observed variations of pH from 4.0 to 7.0. Annual mean value of pH was 5.21 in the area. In particular, strong acidity of rain fall, pH 4.0 were observed during winter to early spring. Neutral values were observed during June to July and were due to wet deposition of atmospheric pollutants by stationary fronts in the rainy season. Interestingly, acidity of snow observed in winter was neutral and it was weaker than the acidity of rain in winter by a value of 2.0. Discussion is made on meteorological and chemical analyses and seasonal variations of acidity of precipitation.

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분사증기법에 의해 형성된 ZnO 투명전도막에서 기판온도가 막 특성에 미치는 영향 (Effect of Substrate Temperature on the Properties of ZnO Transparent conducting Thin Film Prepared by the Vapour Spraying Method)

  • 이환수;주승기
    • 한국세라믹학회지
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    • 제31권4호
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    • pp.436-447
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    • 1994
  • ZnO transparent conducting thin film, which is a strong candidate for a transparent electrical contact in optoelectronic devices, was prepared by the vapour spraying method on the slide glass in nitrogen ambient at the atmospheric pressure. The structural, optical and electrical properties of films show a strong dependence on substrate temperature, and the optimum range of deposition temperature existed to obtain TCO(Transparent Conducting Oxide) films. At the higher temperatures, milky films were obtained. In such optimum range, the bandgap in ZnO films was determined from the spectral dependence of absorption coefficient and electrical characteristics were characterized with by the Hall mobility and carrier concentration.

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BPSG막의 Flow 특성 (Flow Characteristics of the BPSG Film)

  • 홍성현;이종무;송성해
    • 한국세라믹학회지
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    • 제26권3호
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    • pp.381-389
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    • 1989
  • Effects of annealing temperature, time, and atmospehre on the flow characteristics of Atmospheric Pressure Chemical Vapor Deposition-borophosphosilicate glass were investigated. Stable step coverage can be obtained by annealing the BPSG film at 90$0^{\circ}C$ for 30 minutes in N2 atmosphere, but further heat treatment isnot effective. Flow characteristics of the BPSG film was better in steam atmosphere than in N2 atmosphere, and the factors which cause it were analyzed. The concentration of boron in the BPSG film was measured pretty accurately by FTIR spectrum. Boron content in the BPSG film was reduced by annealing treatment. The decrement of boron was greater in steam atmosphere than in the N2 atmosphere. Also it was found from the FTIR spectroscopic analysis that PH3 inhibited the oxidation of B2H6.

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비휘발성 메모리 소자의 Gate-Blocking Layer 적용을 위한 $TiO_2$ 박막 특성 (Characteristic of $TiO_2$ Thin Film for Nonvolatile Memory Device's Gate-Blocking Layer)

  • 최학모;이광수;이준신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.199-200
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    • 2007
  • 본 논문에서는 $SiO_2$ Gate 유전체를 대체할 재료의 하나인 $TiO_2$, Gate 유전체의 기판 증착 온도에 따른 특성을 알아보고자 한다. 디바이스의 고집적화가 높아짐에 따라 얇은 두께의 Gate 유전체의 절대적인 필요에 따라 두께를 최소화하면서 유전율은 높아 전기적 특성이 우수한 소재를 찾게 되었다. 본 논문의 실험에서는 비휘발성 메모리 소자 제작시 Gate Blocking Layer 적용을 위해 High-k 물질인 $TiO_2$, 박막 증착 실험을 하였고, APCVD 방법을 사용하여 성장하였다. 증착 온도에 따른 I-V 특성을 분석하고 그에 따른 소자의 물리적 구조를 SEM을 통해 확인하면서 소자 제작시 최적의 온도를 찾고자 하였다.

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