Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.06a
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- Pages.234-235
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- 2008
Crystal growth of uniform 3C-SiC thin films by CVD
CVD에 의한 균일한 다결정 3C-SiC 박막 결정 성장
- Yoon, Kyu-Hyung (School of Electrical Eng., University of Ulsan) ;
- Chung, Gwiy-Sang (School of Electrical Eng., University of Ulsan)
- Published : 2008.06.19
Abstract
The surface flatness of heteroepitaxially grown 3C-SiC thin films is a key factor affecting electronic and mechanical device applications. This paper describes the surface flatness of poly(polycrystalline) 3C-SiC thin films according to Ar flow rates and the geometric structures of reaction tube, respectively. The poly 3C-SiC thin film was deposited by APCVD (Atmospheric pressure chemical vapor deposition) at