• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.80-81
• /
• 2005

Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a sample of PRAM with thermal protected layer. We have investigated the phase transition behaviors in function of process factor including thermal protect layer. As a result, we have observed that set voltage and duration of protect layer are more improved than no protect layer.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 추계학술대회 논문집
• /
• pp.238-241
• /
• 1996

In this paper, we investigated the electrical characteristics which is d.c. and a.c. conductivity of the amorphous Te$_{80}$Se$_{10}$Sb$_{10}$thin film prepared by thermal evaporation. As the results, the d.c. conduction mechanism was followed thermally activated conduction and from the data of d.c. conductivity, the acti-vation energy and mobility gap were obtained. the d.c. conductivity was increased with temperature and a.c. conductivity also was increased with temperature and frequency. It can consider that the annealing is indispensable for higher conductivity since the activation energy decreased but d.c. and a.c. conductivity increased with annealing.aling.

• 자원환경지질
• /
• 제43권5호
• /
• pp.491-503
• /
• 2010

전남 해남군 모이산 금광상에서 지구화학적 특성에 대한 연구를 수행하기 위하여 모이산 지표 및 갱내, 대산 지표에서 채취한 총 140개 시료에 대한 지구화학분석결과를 상관분석, 요인분석 그리고 군집분석 등 다변수 통계처리 하였다. 상관분석 결과, 금의 함량이 100 ppb 미만인 비광화대와 100 ppb 이상인 광화대에서 동시에 금과 높은 상관관계를 가지는 원소는 Ag, Cu, Bi, Te 등이며, 이는 연구지역에서 수반되는 함금 은 광석광물들(엘렉트럼, 실바나이트, 칼라버라이트 및 스퉤자이트)과 기타광석광물들(황동석, 텔룰로비스무타이트 및 비스무시나이트)의 산출과 일치된 결과로 인지된다. Mo은 비광화대(0.269)에서 보다 광화대(0.615)에서 상대적으로 높은 상관계수를 가지므로 금광화작용에 의해 그 함량이 강하게 지배되고 있는 것으로 해석된다. Mn, Cs, Fe, Se 등은 비광화대에서는 금과 정의 상관관계를 가지지만 광화대에서는 음의 상관관계를 가지므로 금광화작용 시 모암으로부터 용탈되는 원소군으로 해석된다. Sb은 광화대에서 금과 높은 상관성을 보이지만 비광화대에서는 음의 상관관계를 가지므로 금광화작용 시 부화되는 원소로 지시될 수 있다. 요인분석결과, 비광화대에서 금의 함량에 영향을 받는 요인군에 속하는 원소는 Se, Ag, Cs, Te 등이며 이들은 연구지역 내 비광화대에서 금의 존재 여부를 알려줄 수 있는 원소로 해석될 수 있다. 반면 광화대에서는 Mo과 Te 등이 강하게 금광화작용의 여부를 지시해 주며, 금과 함께 수반되는 은광화작용의 여부를 지시해 줄 수 있는 원소는 Sb과 Cu 등으로 해석된다. 군집분석 결과 비광화대에서 Cd-Zn-Pb-S, Bi-Fe-Cu-Mn, Se-Te-Au-Cs-Ag, As-Sb-Ba 등이 유사한 거동을 보이는 원소군으로 나타나는 반면, 광화대에서는 Cd-Zn-Mn-Pb, Fe-S-Se, As-Bi-Cs, Ag-Sb-Cu, Au-Te-Mo 등이 유사한 거동을 보여주는 원소군으로 나타난다. 이상과 같은 지구화학분석 자료의 다변수 통계처리를 이용하여 금광화대와 비광화대의 산출광물의 거동 및 지구화학적 특성 차이의 비교가 가능하므로 추후 이러한 방법이 이와 유사한 유형의 광상탐사에 유용한 방법으로 적용될 수 있을 것으로 기대된다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.156-156
• /
• 2010

A detailed investigation and structure of tested samples are clearly presented. As a reference, $Ge_1Se_1Te_2$/As only sample was also investigated. We used compound of Ge-Se-Te material for phase-change cell. Actually, the performance properties have been improved surprisingly then conventional Ge-Sb-Te. However, crystallization time was as long as ever for amorphization time. We conducted this esperiment in order to solve that problem by doping-As with Ag layer.

• 한국표면공학회지
• /
• 제49권1호
• /
• pp.40-45
• /
• 2016

Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.32-33
• /
• 2006

As next generation nonvolatile memory, chalcogenide-based phase change memory can substitute for a conventional flash memory from its high performance. Also, fast writing speed, low writing voltage, high sensing margin, low power consumption and repetition reliability over $10^{15}$ cycle shows its possibility. At our laboratory, we invented ${Ge_1}{Se_1}{Te_2}$ material to alternate with conventional ${Ge_2}{Sb_2}{Te_5}$ for improve its ability. We respect the ${Ge_1}{Se_1}{Te_2}$ material can be a solution for high power consumption problem and long time at 'set' performance. A conductivity experiment from variable temperature was performed to see reliability of repetition at read and write performance. Compare with conventional ${Ge_2}{Sb_2}{Te_5}$ material, these two materials are used as complex compound to get the finest parameter.

• 한국결정성장학회지
• /
• 제25권4호
• /
• pp.135-139
• /
• 2015

단결정 ingot 성장기술 중 하나인 traveling heater method(THM) 기술을 이용하여 n형 열전소재인 $Bi_2Te_3-Bi_2Se_3$ 고용체화합물을 성장하였다. 고용체 화합물내 $CdCl_2$와 $SbI_3$을 첨가하여 dopant의 영향을 확인하였고 각각의 dopant의 최적의 첨가량[$CdCl_2$ 0.1 wt%(Z: $2.73{\times}10^{-3}/K$), $SbI_3$ 0.05 wt%(Z: $2.29{\times}10^{-3}/K$)]을 확인하였다. THM 기술을 통해 성장된 ingot의 각 부위별 열전특성을 확인해 본 결과 주요 인자들의 표준편차가 낮은 매우 균질화된 특성을 보였다. 또한 $Bi_2Te_3-Bi_2Se_3$ 고용체화합물의 비등방성 지수와 dopant와의 관계를 확인하기 위하여 $90(Bi_2Te_3)10(Bi_2Se_3)$ 조성의 고용체화합물에 donor dopant로서 $CdCl_2$(0.05~0.1 wt%)을 첨가하여 dopant의 증가에 따른 비등방성 지수의 변화를 확인해본 결과 dopant가 증가함에 따라 비등방성 지수가 변하는 것을 확인하였고 이러한 비등방성 지수의 변화가 실제 열전성능에 크게 영향을 미치는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.23-23
• /
• 2009

Recently, the nanowire configuration of GST showed nanosecond-level phase switch at very low power dissipation, suggesting that the nanowires could be ideal for data storage devices. In spite of many advantages of IST materials, their feasibility in both thin films and nanowires for electronic memories has not been extensively investigated. The synthesis of the chalcogenide nanowires was mainly preformed via a vapor transport process such as vapor-liquid-solid (VLS) growth at a high temperature. However, in this study, IST nanowires as well as thin films were prepared at a low temperature (${\sim}250^{\circ}C$) by metal organic chemical vapor deposition(MOCVD) method, which is possible for large area deposition. The IST films and/or nanowires were selectively grown by a control of working pressure at a constant growth temperature by MOCVD. In-Sb-Te NWs will be good candidate materials for high density PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• 정보저장시스템학회:학술대회논문집
• /
• 정보저장시스템학회 2005년도 추계학술대회 논문집
• /
• pp.185-189
• /
• 2005

We reported here nano-scale electrical phase-change recording in amorphous $Ge_2Sb_2Te_5$ media using an atomic force microscope (AFM) having conducting probes. In recording process, a pulse voltage is applied to the conductive probe that touches the media surface to change locally the electrical resistivity of a film. However, in contact operation, tip/media wear and contamination could major obstacles, which degraded SNR, reproducibility, and lifetime. In order to overcome tip/media wear and contamination in contact mode operation, we adopted the W incorporated diamond-like carbon (W-DLC) films as a protective layer. Optimized mutilayer media were prepared by a hybrid deposition system of PECVD and RF magnetron sputtering. When suitable electrical pulses were applied to media through the conducting probe, it was observed that data bits as small as 25 nm in diameter have been written and read with good reproducibility, which corresponds to a data density of $1 Tbit/inch^2$. We concluded that stable electrical phase-change recording was possible mainly due to W-DLC layer, which played a role not only capping layer but also resistive layer.

• Journal of Ceramic Processing Research
• /
• 제20권6호
• /
• pp.582-588
• /
• 2019

FeVSb1-xTex (0.02 ≤ x ≤ 0.10) half-Heusler alloys were fabricated by mechanical alloying process and subsequent vacuum hot pressing. Near single half-Heusler phases are formed in vacuum hot pressed samples but a second phase of FeSb2 couldn't be avoided. After doping, the lattice thermal conductivity in the system was shown to decrease with increasing Te concentration and with increasing temperature. The lowest thermal conductivity was achieved for FeVSb0.94Te0.06 sample at about 657 K. This considerable reduction of thermal conductivities is attributed to the increased phonon scattering enhanced by defect structure, which is formed by doping of Te at Sb site. The phonon scattering might also increase at grain boundaries due to the formation of fine grain structure. The Seebeck coefficient increased considerably as well, consequently optimizing the thermoelectric figure of merit to a peak value of ~0.24 for FeVSb0.94Te0.06. Thermoelectric properties of various Te concentrations were investigated in the temperature range of around 300~973 K.