• Title/Summary/Keyword: As₄O/sub 6/

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Partial Oxidation of CH4 Using {0.7}Sr0.3Ga0.6Fe0.4O3-δ for Soild Oxide Fuel Cell (고체산화물 연료전지용 La0.7Sr0.3Ga0.6Fe0.4O3-δ계의 메탄부분산화반응)

  • Lee, Seung-Young;Lee, Kee-Sung;Lee, Shi-Woo;Kim, Jong-Won;Woo, Sang-Kuk
    • Journal of the Korean Electrochemical Society
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    • v.6 no.1
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    • pp.59-64
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    • 2003
  • We fabricated mixed ionic-electronic conducting membranes, $CH_4\;Using\;{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_{3-\delta}$, by solid state reaction method for solid oxide fuel cell. The membranes consisted of single perovskite phase and exhibited high relative density, $>95\%$. We coated $La_{0.6}Sr_{0.4}CoO_{3-\delta}$ layer using screen printing method in order to improve surface reactivity of the $La_{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_{3-\delta}$. As a result, the oxygen permeation flux of the coated $La_{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_{3-\delta}$ showed higher value, $0.5ml/min{\cdot}cm^2\;at\;950^{\circ}C$ than the uncoated one. Higher oxygen permeation was observed in the porously coated Lao $La_{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_{3-\delta}$membranes with larger grain sizes. Syngas, $CO+H_2$, was successfully obtained from methane gas, $CH_4$, using the $La_{0.6}Sr_{0.4}CoO_{3-\delta}$ coated $La_{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_{3-\delta}$, with over $40\%\;of\;CH_4$ conversion and syngas yield. $La_{0.7}Sr_{0.3}Ga_{0.6}Fe_{0.4}O_{3-\delta}$ membrane was stable even when it was exposed to the reducing environment, methane, for 600 hrs at $950^{\circ}C$.

Temperature Dependence of Cr Impurity in La0.6Sr0.4Ti0.3Fe0.7O3-δ Coated Ba0.5Sr0.5Co0.8Fe0.2O3-δ Ion Conducting Membrane for oxygen Separation (산소 분리를 위한 La0.6Sr0.4Ti0.3Fe0.7O3-δ가 코팅된 Ba0.5Sr0.5Co0.8Fe0.2O3-δ 이온전도성 분리막에서 Cr 불순물의 온도 의존성)

  • Park, Yu Gang;Park, Jung Hoon
    • Korean Chemical Engineering Research
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    • v.57 no.1
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    • pp.11-16
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    • 2019
  • $La_{0.6}Sr_{0.4}Ti_{0.3}Fe_{0.7}O_{3-{\delta}}$(LSTF) coated $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$(BSCF) membranes which has properties of high oxygen permeability and stability to $CO_2$ were applied to a bench scale apparatus to conduct oxygen permeation experiments. Also, the membranes of the laboratory and the bench scale device were divided into three regions according to the temperature gradient in the membrane reactor for comparative analysis. While oxygen permeation experiment were conducted up to $900^{\circ}C$, temperature dependence of Cr deposition was investigated. As a result, it was confirmed that the oxygen permeability was $2.37ml/min{\cdot}cm^2$, which was significantly lower than $3.79ml/min{\cdot}cm^2$ measured in the laboratory apparatus. It was found through XRD and SEM/EDS analysis that the decrease in oxygen permeability was originated from the deposition of gaseous Cr on the membrane surface released from the alloy material of the housing. In particular, a large amount of Cr was found in the medium temperature region.

Effect of Plasma Treatment on TiO2/TiO2-x Resistance Random Access Memory (플라즈마 표면처리가 TiO2/TiO2-x 저항 변화형 메모리에 미치는 영향)

  • Kim, Han-Sang;Kim, Sung-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.6
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    • pp.454-459
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    • 2020
  • In this study, a TiO2/TiO2-x-based resistance variable memory was fabricated using a DC/RF magnetron sputtering system and ALD. In order to analyze the effect of oxygen plasma treatment on the performance of resistance random access memory (ReRAM), the TiO2/TiO2-x-based ReRAM was evaluated by applying RF power to the TiO2-x oxygen-holding layer at 30, 60, 90, 120, and 150 W, respectively. The ReRAM was fabricated, and the electrical and surface area performances were compared and analyzed. In the case of ReRAM without oxygen plasma treatment, the I-V curve had a hysteresis curve shape, but the width was very small, with a relatively high surface roughness of the oxygen-retaining layer. However, in the case of oxygen plasma treatment, the HRS/LRS ratio for the I-V curve improved as the applied RF power increased; stable improvement was also noted in the surface roughness of the oxygen-retaining layer. It was confirmed that the low voltage drive was not smooth due to charge trapping in the oxygen diffusion barrier layer owing to the high intensity ReRAM applied with an RF power of approximately 150 W.

Exchange Bias in Cr2O3/Fe3O4 Core/Shell Nanoparticles

  • Yun, B.K.;Koo, Y.S.;Jung, J.H.
    • Journal of Magnetics
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    • v.14 no.4
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    • pp.147-149
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    • 2009
  • We report the exchange bias in antiferromagnet/ferrimagnet $Cr_2O_3/Fe_3O_4$ core/shell nanoparticles. The magnetic field hysteresis curve for $Cr_2O_3/Fe_3O_4$ nanoparticles after field-cooling (FC) clearly showed both horizontal ($H_{EB}{\sim}$610 Oe) and vertical (${\Delta}M{\sim}$5.6 emu/g) shifts at 5 K. These shifts disappeared as the temperature increased toward the Neel temperature of $Cr_2O_3\;(T_N{\sim}$307 K). The $H_{EB}\;and\;{\Delta}M$ values were sharply decreased between the $1^{st}\;and\;the\;2^{nd}$ magnetic field cycles, and then slowly decreased with further cycling. These results are discussed in terms of the formation of single domains with pinned, uncompensated, antiferromagnetic spin and their evolution into multi-domains with cycling.

Machinable Ceramics Made by the Reaction Sintering of PSZ, Al2O3 and TiO2 (PSZ, Al2O3, TiO2를 반응소결하여 제조한 쾌삭(快削) 세라믹스)

  • Park, Jeong Hyun;Jung, Dong Sik;Lee, Won Jae;Kim, Il Soo
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.581-585
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    • 2012
  • Machinability is important in engineering applications, especially in the current micro-electronics industry. Most ceramic components have complex shapes and hence require machining generally with diamond tools, which incurs a high production cost. Recently, h-BN-containing machinable ceramics have been developed, but these materials are very expensive due to the high raw materials and production costs. Therefore, the development of low-cost machinable ceramics is necessary. In this study, inexpensive $Al_2TiO_5$ was studied as a replacement for h-BN. $Al_2O_3$, $TiO_2$ and partially stabilized $ZrO_2$(PSZ) powders were mixed with various mole ratios and were sintered at $1500^{\circ}C$ for 1 h. The density, hardness and strength were then measured. The phase analysis and microstructures were observed by XRD and SEM, respectively. The machinability of each specimen was tested by micro-hole machining. The results of this research showed that the produced composites could be used as low-cost machinable ceramics.

A Study on the Physical Properties of xB2O3-yBi2O3-zPbO-5SiO2 Glass System (xB2O3 -yBi2O3-zPbO-5SiO2계 유리의 전기적인 특성)

  • Joung, Maeng Sig;Ju, Kyung Bok;Lee, Nam Han
    • Journal of Korean Ophthalmic Optics Society
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    • v.6 no.1
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    • pp.111-117
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    • 2001
  • The temperature dependence of dielectric constant and electrical conductivity for the BBPS glasses system was studied over a temperature range between $30^{\circ}C$ and $500^{\circ}C$ and at a frequency ranged from $10^3$ Hz to $10^7$ Hz. The dielectric constant ${\varepsilon}$ at room temperature of $xB_2O_3-yBi_2O_3-zPbO-5SiO_2 $ glasses was measured to be 15 at $10^5$ Hz for all samples and found to be almost frequency independent. At the relatively low temperature ranger (<$70^{\circ}C$), the dielectric constant was almost temperature independent and above that it increased with increasing temperature: the rate of increase being different at different frequencies. This behavior could be explained on the basis of the presence of molecular dipoles. The dielectric constant was found to depend on the composition as well as the crystalline phases formed in the glass matrix.

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A Study on the Hydrothermal Synthesis of Tobermorite in the System of CaO-SiO2-H2O and Cement Sludge-SiO2-H2O (생석회-규사-수계 및 시멘트 슬러지-규사-수계에서 Tobermorite의 수열합성에 관한 연구)

  • Rho, Jae-Seong;Hong, Seong-Su;Cho, Heon-Young;Choi, Sang-Won
    • Applied Chemistry for Engineering
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    • v.4 no.2
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    • pp.291-299
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    • 1993
  • Hydrothermal synthesis of 1.13nm tobermorite was performed to obtain the mixing ratio of raw materials, the optimum reaction time and the effect of aluminum in two systems, $CaO-SiO_2-H_2O$ and cement sludge-$SiO_2-H_2O$. 1.13nm tobermorite($5CaO{\cdot}6SiO_2{\cdot}5H_2O:C_5S_6H_5$) was synthesized excellently from $CaO-SiO_2-H_2O$ system on each mole ratio (0.4, 0.8) of $CaO/SiO_2$ at $180^{\circ}C$. But a tobermorite crystals had a sign of crystal conversion after 6 hours of reaction times in the case of $CaO/SiO_2=0.4$ and 4 hours of reaction time in the case of $CaO/SiO_2=0.8$. However, a tobermorite synthesized from cement sludge wastes did not show the crystal conversion on each mole ratio(0.4, 0.8) of $CaO/SiO_2$ within 10 hours of reaction times. It is considered that aluminum ions dissolved from cement sludge wastes retarded the recrystallization of tobermorite. This role of aluminum ion was confirmed in $CaO-SiO_2-H_2O+Al$ powder system. According as added amount of Al powder was increased from 0.8% to 3.0%, the crystal had a highly flatter and larger shape. Recrvstallization was not detected within the same reaction times when aluminum was added.

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Fabrication of Sm0.5Sr0.5CoO3 cathode films for intermediate temperature SOFCs by electrostatic spray deposition (정전분무증착법에 의한 중온형 고체산화물 연료전지를 위한 Sm0.5Sr0.5CoO3 양극막의 제조)

  • Park, In-Yu;Im, Jong-Mo;Jung, Yeong-Geul;Shin, Dong-Wook
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.2
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    • pp.69-73
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    • 2010
  • The microstructural change of the $Sm_{0.5}Sr_{0.5}CoO_3$ (SSC) electrode for a cathode material of solid oxdie fuel cells (SOFCs) deposited by the electrostatic spray deposition (ESD) technique was characterized. Samarium chloride hexahydrate $(SmCl_3{\cdot}6H_2O)$, strontium chloride hexahydrate $(SrCl_2{\cdot}gH_2O)$, cobalt nitrate hexahydrate $(Co(No_3)_2{\cdot}6H_2O)$ as starting materials and methyl alcohol as solvent were used to make precursor solution. The suitable porous SSC films for a cathode of SOFCs were deposited on Si substrate and it is observed that the microstructure was strongly dependent on processing parameters such as deposition time, substrate temperature, and applied voltage. Scanning Electron Microscope (SEM) and X-ray Diffractometer (XRD) measurement were used to investigate the microstructure and crystallinity of the SSC films. The ESD technique is shown to be an efficient method in which the SOFCs' cathode film can be fabricated with the desired phases and microstructure.

Low Temperature Sintering and Microwave Dielectric Properties of Ca[Ti1-x(Ni1/3Nb2/3)x]O3 Ceramics (Ca[Ti1-x(Ni1/3Nb2/3)x]O3 세라믹스의 저온소결 및 마이크로파 유전특성)

  • Lee, Young-Gyu;Kim, Hyo-Tae;Nam, Joong-Hee;Kim, Jong-hee;Paik, Ungyu
    • Journal of the Korean Ceramic Society
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    • v.43 no.1 s.284
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    • pp.55-61
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    • 2006
  • The microwave dielectric properties and low temperature sintering of $Ca[Ti_{1-x}(Ni_{1/3}Nb_{2/3})_x]O_3$ system were investigated at the sintering temperature $1,200\~1,350^{\circ}C$. The density and quality factors $(Q{\times}f)$ increased while dielectric constants slightly decreased with the decrease of Ti. The dielectric constant, quality factor, and temperature coefficient of resonance frequency $(\tau_f)$ were 64, 17,000 GHz, and $-9.1\;ppm/^{\circ}C$ respectively, when $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ ceramics were sintered at $1,300^{\circ}C$ for 4 h. $2Li_2O-B_2O_3$ was added to $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ to decrease the sintering temperature for LTCC application. The microwave dielectric properties of the samples sintered at $925^{\circ}C$ for 2 h with the addition of $6\;wt\%\;2Li_2O-B_2O_3$ were $\varepsilon_r=48.7,\;Q{\times}f=8,460\;GHz$, and $\tau_f=+5.6ppm/^{\circ}C$. Compatibility test of the composition with silver electrode shows no reaction with silver electrode, implying the feasibility as a high-K LTCC material.

Bandgap Control of (AlxGa1-x)2O3 Epilayers by Controlling Aqueous Precursor Mixing Ratio in Mist Chemical Vapor Deposition System (미스트화학기상증착시스템의 전구체 수용액 혼합비 조절을 통한 (AlxGa1-x)2O3 에피박막의 밴드갭 특성 제어 연구)

  • Kim, Kyoung-Ho;Shin, Yun-Ji;Jeong, Seong-Min;Bae, Si-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.6
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    • pp.528-533
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    • 2019
  • We investigated the growth of $(Al_xGa_{1-x})_2O_3$ thin films on c-plane sapphire substrates that were grown by mist chemical vapor deposition (mist CVD). The precursor solution was prepared by mixing and dissolving source materials such as gallium acetylacetonate and aluminum acetylacetonate in deionized water. The [Al]/[Ga] mixing ratio (MR) of the precursor solution was adjusted in the range of 0~4.0. The Al contents of $(Al_xGa_{1-x})_2O_3$ thin films were increased from 8 to 13% with the increase of the MR of Al. As a result, the optical bandgap of the grown thin films changed from 5.18 to 5.38 eV. Therefore, it was determined that the optical bandgap of grown $(Al_xGa_{1-x})_2O_3$ thin films could be effectively engineered by controlling Al content.