• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.119-119
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• 2015

Ion beam sputtering has been widely used in Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS), and Auger Electron Spectroscopy (AES) for depth profile or surface cleaning. However, mainly due to severe matrix effects such as surface composition change from its original composition and damage of the surface generated by ion beam bombardment, conventional sputtering skills using mono-atomic primary ions with energy ranging from a few hundred to a thousand volts are not sufficient for the practical surface analysis of next-generation organic/inorganic device materials characterization. Therefore, minimization of the surface matrix effects caused by the ion beam sputtering is one of the key factors in surface analysis. In this work, the electronic structure of a $Ta_2O_5$ thin film on $SiO_2/Si$ (100) after Ar Gas Cluster Ion Beam (GCIB) sputtering was investigated using X-ray photoemission spectroscopy and compared with those obtained via mono-atomic Ar ion beam sputtering. The Ar ion sputtering had a great deal of influence on the electronic structure of the oxide thin film. Ar GCIB sputtering without sample rotation also affected the electronic structure of the oxide thin film. However, Ar GCIB sputtering during sample rotation did not exhibit any significant transition of the electronic structure of the $Ta_2O_5$ thin films. Our results showed that Ar GCIB can be useful for potential applications of oxide materials with sample rotation.

• 대한전자공학회논문지SD
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• 제44권11호
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• pp.15-19
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• 2007

OTFTs (Organic Thin Film Transistors)의 구동에 있어, 게이트 절연막 표면과 채널의 계면상태가 소자의 전기적 특성에 큰 영향을 미치게 된다. OTS(Octadecyltrichlorosilane)등과 같은 습식 SAM(Self Assembly Monolayer)를 이용하거나, $O_2$ Plasma와 같은 건식 표면 처리등 여러 표면 처리법에 대한 연구가 진행되고 있다. 본 논문에서는 pentacene을 진공 증착하기 전에 게이트 절연막을 $O_2$ plasma와 Ar ion beam을 이용하여 건식법으로 전처리 한 후 표면 특성을 atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS)를 사용하여 비교 분석하였고, 각 조건으로 OTFT를 제작하여 전기적 특성을 확인하였다. Ar ion beam으로 표면처리 했을 때, $O_2$ plasma처리했을 때 보다 향상된 on/off ratio 전기적 특성을 얻을 수 있었다. 표면 세정을 위하여 $O_2$ plasma 처리시 $SiO_2$ 표면의 OH-기와 반응하여 oxide trap density가 높아지게 되고 이로 인하여 off current가 증가하는 문제가 발생한다. 불활성 가스인 Ar ion beam 처리를 할 경우 게이트 절연막의 세정 효과는 유지하면서, $O_2$ Plasma 처리했을 때 증가하게 되는 계면 trap을 억제할 수 있게 되어, mobility 특성은 동등 수준으로 유지하면서 off current를 현저하게 줄일 수 있게 되어, 결과적으로 높은 on/off ratio를 구현할 수 있다는 것을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.98-98
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• 2010

Ion beam irradiation has been extensively used for surface modification of polymers, glassy metals and amorphous and crystalline materials at micron and submicron scales. The surface structures created by exposure to an ion beam range from dots, steps and one-dimensional straight wrinkles to highly complex hierarchical undulations and ripples. In general, the morphology of these nanoscale features can be selected by controlling the ion beam parameters (e.g. fluence and acceleration voltage), making ion beam irradiation a promising method for the surface engineering of materials. In the work, we presented that ion beam irradiation results in creation of a peculiar nanoscale dimple-like structure on the surface of polyimide - a common polymer in electronics, large scale structures, automobile industry, and biomedical applications. The role of broad Ar ion beam on the morphology of the structural features was investigated and insights into the mechanisms of formation of these nanoscale features were provided. Moreover, a systematic experimental study was performed to quantify the role of ion beam treatment time, and thus the morphology, on the coefficient of friction of polyimide surfaces covered by nanostructure using a tribo-experiment. Nano-indentation experiment were performed on the ion beam treated surfaces which shows that the hardness as well as the elastic modulus of the polyimide surface increased with increase of Ar ion beam treatment time. The increased of hardness of polyimide have been explained in terms of surface structure as well as morphology changes induced by Ar ion beam treatment.

• 한국세라믹학회지
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• 제40권12호
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• pp.1165-1169
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• 2003

이중 이온빔 스퍼터링(Dual ion-beam sputtering)을 사용하여 보조이온건의 Ar/O$_2$가스유량 변화에 따라 Si-(III) 기판과 glass에 Ta$_2$O$_{5}$ 박막을 증착시켰다. 보조 이온총의 산소 가스량의 비가 감소함에 따라서 증착되는 Ta$_2$O$_{5}$ 박막의 성장속도는 감소하였으며, 굴절률은 $O_2$ 가스의 양이 0∼12sccm인 범위에서 2.09(at 1550nm)로 일정한 값을 나타내었다. Ar:O$_2$가 3: 12인 조건에서 화학양론 조성인 Ta$_2$O$_{5}$를 형성하였으며, 표면 거칠기도 가장 작은 값을 나타내었다.나타내었다.

• 폴리머
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• 제26권6호
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• pp.718-727
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• 2002

본 연구에서는 최종 복합재료의 기계적 계면특성을 향상시키기 위하여 산소 분위기 하에서 반응성 기체를 사용하는 이온 보조 반응법에 의해 탄소섬유 표면에 Ar+ 이온 빔을 조사하였다. 그리고, 단일 섬유 pull-out 시험을 실시하여 가해진 이온 에너지 세기에 대한 수지 내의 섬유의 뽑힘 정도를 측정한 후 Greszczuk의 .기하학적 모델에 기초하여 섬유/매트릭스 간의 계면특성을 알아보고자 하였다. 그 결과, 탄소섬유를 이온 빔으로 처리함에 따라 섬유와 매트릭스 간의 부착력 증가의 원인이 되는 섬유축 방향으로의 표면 etching 및 반응성 그룹이 형성되어 계면 전단강도가 향상되었으며 0.8 keV 이온 빔 세기에서 최대값을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1994년도 제6회 학술발표회 논문개요집
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• pp.132-132
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• 1994

• Applied Microscopy
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• 제45권4호
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• pp.189-194
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• 2015

Backside Ar ion milling technique for the preparation of cross-sectional transmission electron microscopy (TEM) specimens, and backside-ion milling combined with focused ion beam (FIB) operation for electron holography were introduced in this paper. The backside Ar ion milling technique offers advantages in preparing cross-sectional specimens having thin, smooth and uniform surfaces with low surface damages. The back-side ion milling combined with the FIB technique could be used to observe the two-dimensional p-n junction profiles in semiconductors with the sample quality sufficient for an electron holography study. These techniques have useful applications for accurate TEM analysis of the microstructure of materials or electronic devices such as arrayed hole patterns, three-dimensional integrated circuits, and also relatively thick layers (> $1{\mu}m$).

• 열처리공학회지
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• 제25권6호
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• pp.279-282
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• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation, it is supposed that intense Ar bombardments promote rough surface and increase gas sensitivity of $SnO_2$ films for hydrogen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9 keV. These results suggest that the $SnO_2$ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.

• The Korean Journal of Ceramics
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• 제2권1호
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• pp.48-53
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• 1996

Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.91-94
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• 1999

A new type of high-T$_c$ superconducting Josephson junctions has been prepared by Ar ion beam etching and electron beam lithography. YBa$_2Cu_3O_{7-x}$ (YBCO) films deposited on (001) SrTiO$_3$ single crystal substrate by pulsed laser deposition were patterned by Ar ion milling with photolithography. The narrow slit with a electroresist mask, about 1000 ${\AA}$ wide, was constructed over a 3 ${\sim}$ 5 ${\mu}$m bridge of a 1200-${\AA}$-thick YBCO film by electron beam lithography. The slit was then etched by the Ar ion beam to form a damaged 600-${\AA}$-thick YBCO. Thus prepared structure forms an S-N-S (YBCO - damaged YBCO - YBCO) type Josephson junctions. Those junctions exhibit RSI-like I-V characteristics at 77 K. The properties of the Josephson junctions such as I$_c$ R$_N$, and J$_c$ were characterized.