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Performance enhancement of Organic Thin Film Transistor by Ar Ion Beam treatment  

Jung, Suk-Mo (School of Electrical Engineering, Pusan National University)
Park, Jae-Young (School of Electrical Engineering, Pusan National University)
Yi, Moon-Suk (School of Electrical Engineering, Pusan National University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.44, no.11, 2007 , pp. 15-19 More about this Journal
Abstract
This paper reports the effects of Ar ion beam surface treatment on a $SiO_2$ dielectric layer in organic thin film transistors. We compared the electrical properties of pentacene-based OTFTs, treated by $O_2$ plasma or Ar ion beam treatments and characterized the states of the surface of the dielectric by using atomic force microscopy and X-ray photoelectron spectroscopy. For the sample which received $O_2$ plasma treatment, the mobility increased significantly but the on/off current ratio was found very low. The Ar ion beam-treated sample showed a very high on/off current ratio as well as a moderately improved mobility. XPS data taken from the dielectric surfaces after each of treatments exhibit that the ratio of between Si-O bonds and O-Si-O bonds was much higher in the $O_2$ plasma treated surface than in the Ar ion beam treated surface. We believe that our surface treatment using an inert gas, Ar, carried out an effective surface cleaning while keeping surface damage very low, and also the improved device performances was achieved as a consequence of improved surface condition.
Keywords
Ar ion beam; $O_2$ plasma; organic thin film transistor; OTFTs; pentacene;
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