• 제목/요약/키워드: Antiferromagnetic insulator

검색결과 6건 처리시간 0.023초

Metal-Insulator Transition Induced by Short Range Magnetic Ordering in Mono-layered Manganite

  • Chi, E.O.;Kim, W.S.;Hong, C.S.;Hur, N.H.;Choi, Y.N.
    • Bulletin of the Korean Chemical Society
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    • 제24권5호
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    • pp.573-578
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    • 2003
  • The structural, magnetic, and transport properties of a mono-layered manganite $La_{0.7}Sr_{1.3}MnO_{4+{\delta}}$ were investigated using variable temperature neutron powder diffraction as well as magnetization and transport measurements. The compound adopts the tetragonal I4/mmm symmetry and exhibits no magnetic reflection in the temperature region of 10 K ≤ T ≤ 300 K. A weak ferromagnetic (FM) transition occurs about 130 K, which almost coincides with the onset of a metal-insulator (M-I) transition. Extra oxygen that occupies the interstitial site between the [(La,Sr)O] layers makes the spacing between the [MnO₂] layers shorten, which enhances the inter-layer coupling and eventually leads to the M-I transition. We also found negative magneto resistance (MR) below the M-I transition temperature, which can be understood on the basis of the percolative transport via FM metallic domains in the antiferromagnetic (AFM) insulating matrix.

Phonon-Assisted Electron Hopping Conduction in the Uranium Doped One-Dimensional Antiferromagnet Ca2CuO3

  • Thanh, Phung Quoc;Yu, Seong-Cho;Nhat, Hoang-Nam
    • Journal of Magnetics
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    • 제13권4호
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    • pp.132-135
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    • 2008
  • The authors studied the conduction mechanism in an uranium doped low dimensional magnetic system $Ca_2CuO_3$. This system exhibits the S=1/2 quasi 1D antiferromagnetic chains of -Cu-O- with strong magnetic coupling, and demonstrates continuous semiconductor-like behavior with constant covalent insulator character. This paper identifies the conduction is due to thermally activated phonon-assisted electron hopping between dopant uranium sites. The parameter a, the characteristic for hopping probability, was determined to be 0.18 ${\AA}^{-1}$. This value manifests a relatively stronger hopping probability for $Ca_2CuO_3$ as compared with other uranium doped ceramics.

Electronic Structures of ANb2PS10 (A=Ag, Na) and AuNb4P2S20

  • Jung, Dong-Woon;Kim, Sung-Jin
    • Bulletin of the Korean Chemical Society
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    • 제24권6호
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    • pp.739-743
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    • 2003
  • New quaternary compounds $ANb_2PS_{10}$ (A = Na, Ag) and $AuNb_4P_2S_{20}$ were synthesized and characterized. The structures of three compounds consist of one-dimensional infinite chains built by [$Nb_2S_{12}$] and [$PS_4$] units. Cation atoms are occupied within the van der Waals gap of sulfur atoms between infinite chains to make -S…$M^+$…S- contacts. There is only one Au atom site and so crystallographically a unit cell contains four equivalent Au atoms in $AuNb_4P_2S_{20}$. This is only the half of the numbers of Na or Ag atoms in $NaNb_2PS_{10}$ or $AgNb_2PS_{10}$. The ratio between $Nb_2PS_{10}$ matrix vs the cation is, therefore, 1 : 1 for Ag and Na, but it is 2 : 1 for Au. Mixed valency in Au or Nb was expected to balance the charge in the latter compound. The electronic structures calculated based on the extended Huckel tight-binding method show that $ANb_2PS_{10}$ (A = Ag, Na) are semiconducting, while $AuNb_4P_2S_{20}$ is metallic, which is not consistent with the experimental results of these three compounds that all exhibit semiconducting property. The result of calculation suggests that $AuNb_4P_2S_{20}$ might be a magnetic insulator. Magnetic measurement experiment exactly proved that the compound is a Slater antiferromagnetic material with the Neels' temperature of 45 K. It is recognized, therefore, that electronic structure analysis is very useful to understand the properties of compounds.

Time-Resolved Photoexcitation Dynamics of Electrical Conductivity of Magnetic Organic Superconductor λ-(BETS)2Fe0.45Ga0.55Cl4

  • Sabeth, Farzana;Islam, Md. Serajul;Endo, Tadashi;Ohta, Nobuhiro
    • Rapid Communication in Photoscience
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    • 제4권1호
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    • pp.25-28
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    • 2015
  • The time-resolved photoexcitation dynamics of electrical conductivity of the magnetic organic superconductor ${\lambda}-(BETS)_2Fe_{0.45}Ga_{0.55}Cl_4$ has been studied with a nanosecond visible laser pulse at its three different phases, i. e., metallic phase, superconducting phase and insulating phase. A transient increase of the resistance is induced by photoirradiation at all the temperatures measured for all three phases, but the decay profile shows a significant temperature dependence. The relaxation rate in the metallic and insulating phase are different from each other, and the decay time is relatively faster and almost constant in the metallic phase. However, a prolongation of the relaxation time is observed at temperature just around the narrow superconducting phase. Nonbolometric (nonthermal) origin of the observed photoresponse of the electrical conductivity is confirmed in the superconducting phase.

Fe3O4/CoFe2O4 superlattices; MBE growth and magnetic properties

  • Quang, Van Nguyen;Shin, Yooleemi;Duong, Anh Tuan;Nguyen, Thi Minh Hai;Cho, Sunglae;Meny, Christian
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.242-242
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    • 2016
  • Magnetite, Fe3O4, is a ferrimagnet with a cubic inverse spinel structure and exhibits a metal-insulator, Verwey, transition at about 120 K.[1] It is predicted to possess as half-metallic nature, 100% spin polarization, and high Curie temperature (850 K). Cobalt ferrite is one of the most important members of the ferrite family, which is characterized by its high coercivity, moderate magnetization and very high magnetocrystalline anisotropy. It has been reported that the CoFe2O4/Fe3O4 bilayers represent an unusual exchange-coupled system whose properties are due to the nature of the oxide-oxide super-exchange interactions at the interface [2]. In order to evaluate the effect of interface interactions on magnetic and transport properties of ferrite and cobalt ferrite, the CoFe2O4/Fe3O4 superlattices on MgO (100) substrate have been fabricated by molecular beam epitaxy (MBE) with the wave lengths of 50, and $200{\AA}$, called $25{\AA}/25{\AA}$ and $100{\AA}/100{\AA}$, respectively. Streaky RHEED patterns in sample $25{\AA}/25{\AA}$ indicate a very smooth surface and interface between layers. HR-TEM image show the good crystalline of sample $25{\AA}/25{\AA}$. Interestingly, magnetization curves showed a strong antiferromagnetic order, which was formed at the interfaces.

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Gd 도핑된 비스무스 텔루라이드의 자기적 성질에 대한 제일원리 계산 연구 (First-principles Study on the Magnetic Properties of Gd doped Bithmuth-Telluride)

  • ;김미영
    • 한국자기학회지
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    • 제26권2호
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    • pp.39-44
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    • 2016
  • 대표적 열전물질인 비스무스 텔루라이드에 자성원자를 도핑한 합금에 대한 구조 및 전자적 그리고 자기적 성질에 관한 연구는 고효율 열전물질의 개발이라는 목적뿐만 아니라 특이한 자기적 상호작용 규명 및 위상절연체 분야에서도 큰 관심을 끌고 있다. 본 연구에서는 희토류 원자로서 매우 국소화된 f 전자를 갖는 Gd이 Bi을 치환하여 도핑된 비스무스 텔루라이드 합금의 자성 안정성을 밀도범함수(Density Functional Theory)에 입각하여 제일원리적으로 연구하기 위하여 모든 전자(all-electron) FLAPW(full-potential linearized augmented plane-wave) 방법을 이용하여 전자구조 계산을 수행하였다. 전자간 교환-상관 상호작용은 일반기울기 근사법(Generalized Gradient Approximation)을 도입하여 계산하였으며, 국소화된 f 전자를 기술하는 데 필요한 Hubbard+U 보정과 스핀-궤도 각운동량 상호작용은 제2 변분법적 방법을 이용하여 고려하였다. 계산 결과, 강자성 안정성을 보이는 Gd 덩치계와 다르게 이 합금은 강자성과 반강자성의 총에너지 차이가 ~1 meV/Gd 정도의 아주 작은 값으로 얻어져서, 그 자성 안정성은 결함이나 strain 등에 의한 구조변화에 민감하게 의존하여 변할 수 있음을 알 수 있었다. 특히 Gd 스핀자기모멘트는 덩치에서의 값에 비해 감소하였고, Gd에 가장 가까운 Te에 유도 자기모멘트가 형성되는 것으로 미루어 Te를 매개로 한 자성상호작용이 자성 안정성을 결정하는 데에 중요한 역할을 하는 것으로 예측할 수 있었다.