• Journal of the Korean institute of surface engineering
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• v.56 no.2
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• pp.115-124
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• 2023

Anodization is an electrochemical process that electrochemically converts a metal surface into an oxide layer, resulting in enhanced corrosion resistance, wear resistance, and improved aesthetic appearance. Local anodization, also known as selective anodization, is a modified process that enables specific regions or patterns on the metal surface to undergo anodization instead of the entire surface. Several methods have been attempted to produce oxide layers via localized anodic oxidation, such as using a mask or pre-patterned substrate. However, these methods are often intricate, time-consuming, and costly. Conversely, the direct writing or patterning approach is a more straightforward and efficient way to fabricate the oxide layers. This review paper intends to enhance our comprehension of local anodization and its potential applications in various fields, including the development of nanotechnologies. The application of anodization is promising in surface engineering, where the anodic oxide layer serves as a protective coating for metals or modifies the surface properties of materials. Furthermore, anodic oxidation can create micro- and nano-scale patterns on metal surfaces. Overall, the development of efficient and cost-effective anodic oxidation methods is essential for the advancement of various industries and technologies.

• Journal of Electrochemical Science and Technology
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• v.8 no.1
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• pp.69-76
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• 2017

Crystallization of one-dimensional porous tin oxide during the anodic oxidation of tin at ambient temperatures is reported. Remarkable crystallinity is achieved when a substrate with a high elastic modulus (e.g., silicon) is used and the tin coating on it is very thin. It is suggested that the compressive stress applied to the anodic tin oxide during the anodization process is the key factor affecting the degree of crystallinity. The measured value of the stress generated during anodization matches well with the range of the most favorable theoretical pressure (stress) for crystallization.

• Journal of the Korean institute of surface engineering
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• v.51 no.1
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• pp.1-10
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• 2018

Anodic oxidation treatment of metals is one of typical surface finishing methods which has been used for improving surface appearance, bioactivity, adhesion with paints and the resistances to corrosion and/or abrasion. This article provides fundamental principle, type and characteristics of the anodic oxidation treatment methods, including anodizing method and plasma electrolytic oxidation (PEO) method. The anodic oxidation can form thick oxide films on the metal surface by electrochemical reactions under the application of electric current and voltage between the working electrode and auxiliary electrode. The anodic oxide films are classified into two types of barrier type and porous type. The porous anodic oxide films include a porous anodizing film containing regular pores, nanotubes and PEO films containing irregular pores with different sizes and shapes. Thickness and defect density of the anodic oxide films are important factors which affect the corrosion resistance of metals. The anodic oxide film thickness is limited by how fast ions can migrate through the anodic oxide film. Defect density in the anodic oxide film is dependent upon alloying elements and second-phase particles in the alloys. In this article, the principle and mechanisms of formation and growth of anodic oxide films on metals are described.

• Korean Journal of Materials Research
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• v.13 no.9
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• pp.593-597
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• 2003

Anodic aluminum oxide (AAO) membrane was made of aluminum sheet (99.6%, 0.2 mm thickness). The regular array of hexagonal nano pores or channels were prepared by two step anodization process. A detail description of the AAO fabrication is presented. After the 1st anodization in oxalic acid (0.3 M) at 45 V, The formed AAO was removed by etching in a solution of 6 wt% $H_3$$PO_4$＋1.8 wt% $H_2$$CrO_4$. The regular arrangement of the pores was obtained by the 2nd anodization, which was carried out in the same condition as the 1st anodization. Subsequently, the alumina barrier layer at the bottom of the channel layer was removed in phosphoric acid (1M) after removing of aluminum. Pore diameter, density, and thickness could be controlled by the anodization process parameters such as applied voltage, anodizing time, pore widening time, etc. The pore diameter is proportional to the applied voltage and pore widening time. The pore density and thickness can be controlled by anodization temperature and voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.8
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• pp.708-713
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• 2005

An alumina membrane with nano-sized pore array by anodic oxidation using the thin film aluminum deposited on silicon wafer was fabricated. It Is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2 M was used for low voltage anodization under 100 V, the chromic acid with 0.1 M was used for high voltage anodization over 100 V. The nano-sized pores with diameter of $60\~120$ nm was obtained by low voltage anodization of $40\~80$ V and those of $200\~300$ nm was obtained by high voltage anodization of $140\~200$ V. The pore widening process was employed for obtaining the one-channel with flat surface because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of two-channel with rough surface. Finally, the sample was immersed to the phosphoric acid with 0.1 M concentration to etching the barrier layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.120-122
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• 2005

An alumina membrane with nano-sized pore array by anodic oxidation using thin film aluminum deposited on silicon wafer was fabricated. It is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2M was used for low voltage anodization under 100V, the chromic acid with 0.1M was used for high voltage anodization over 100V. The nano-sized pores with diameter of 60~120nm was obtained by low voltage anodization of 40~90V and those of 200~300nm was obtained by high voltage anodization of 120~160V. Finally, the sample was immersed to the phosphoric acid with 0.1M concentration to etching the barrier layer. The sample will be applied to electronic sensors, field emission display, and template for nano-structure.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.235-238
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• 1999

Silicon dioxide films were prepared by anodizing silicon wafers in an ethylene $glycol+HNO_3(0.04{\;}N)$ at 20 to $70^{\circ}C$. The voltage between silicon anode and platinum cathode was measured during this process. Under the constant current electrolysis, the voltage increased with oxide film growth. The transition time at which the voltage reached the predetermined value depended on the temperature of the electrolyte. After the time of electrolysis reached the transition time, the anodization was changed the constant voltage mode. The depth profile of oxide film/Si substrate was confirmed by XPS analysis to study the influence of the electrolyte temperature on the anodization. Usually, the oxide-silicon peaks disappear in the silicon substrate, however, this peak was not small at $45^{\circ}C$ in this region.

• Polymer(Korea)
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• v.30 no.3
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• pp.187-195
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• 2006

Atomic force microscope (AFM)-based anodic oxidation lithography has gained great in forests in fabricating nanometer scale features on semiconductor or metal substrates beyond the limitation of optical lithography. In this article AFM anodic oxidation lithography and its organic resist layers are introduced based on our previous works. Organic resist layers of self-assembled monolayers, Langmuir-Blodgett films and polymer films aye suggested to play a key role in enhancing the aspect ratio of producing features, the lithographic speed, and spatial precision in AFM anodic oxidation lithography.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.482-487
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• 2002

A $TiO_2$ film for photocatalyst was prepared by anodic oxidation at 180V in acidic electrolyte and film formation mechanism was studied. The major part of anodic $TiO_2$ film consisted of anatase type structure and surface morphology exhibited a porous cell structure. The thickness growth rate of the oxide film with anodization time revealed two-stage slope corresponds to the surface morphology between anodic films. The growth of pores on cell structure and the growth rate of film with two-stage slope are related to the constant formation rate of the $TiO_2$ layer.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1495-1496
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• 2011

Anodic aluminum oxide (AAO) nanotemplates for nano electronic device applications have been attracting increasing interest because of ease of fabrication, low cost process, and possible fabrication in large area. The size and density of the nanostructured materials can be controlled by changing the pore diameter and the pole density of AAO nanotemplate. In this paper, AAO nanotemplate was fabricated by second anodization method. In addition, effects of electrolyte and anodization voltate on the microstructure of porous alumina films were investigated. Vertically well aligned pores had the average pore sizes of 15-70 nm and the length of approximately 40 ${\mu}m$.