Browse > Article
http://dx.doi.org/10.3740/MRSK.2003.13.9.593

Fabrication of Alumina Membrane Using Anodic Oxidation Process  

Im, W.S. (Department of Materials Engineering, Chungnam National University)
Cho, K.C. (Department of Materials Engineering, Chungnam National University)
Cho, Y.S. (Department of Materials Engineering, Chungnam National University)
Choi, G.S. (Department of Materials Engineering, Chungnam National University)
Kim, D.J. (Department of Materials Engineering, Chungnam National University)
Publication Information
Korean Journal of Materials Research / v.13, no.9, 2003 , pp. 593-597 More about this Journal
Abstract
Anodic aluminum oxide (AAO) membrane was made of aluminum sheet (99.6%, 0.2 mm thickness). The regular array of hexagonal nano pores or channels were prepared by two step anodization process. A detail description of the AAO fabrication is presented. After the 1st anodization in oxalic acid (0.3 M) at 45 V, The formed AAO was removed by etching in a solution of 6 wt% $H_3$$PO_4$+1.8 wt% $H_2$$CrO_4$. The regular arrangement of the pores was obtained by the 2nd anodization, which was carried out in the same condition as the 1st anodization. Subsequently, the alumina barrier layer at the bottom of the channel layer was removed in phosphoric acid (1M) after removing of aluminum. Pore diameter, density, and thickness could be controlled by the anodization process parameters such as applied voltage, anodizing time, pore widening time, etc. The pore diameter is proportional to the applied voltage and pore widening time. The pore density and thickness can be controlled by anodization temperature and voltage.
Keywords
anodic aluminum oxide; anodization; membrane; template;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Y. C. Sui, J. A. Gonzalez-Leon, A. Bermudez and J. M. Saniger, Carbon, 39, 1709 (2001)   DOI   ScienceOn
2 A. J. Yin, J. Li, W. Jian, A. J. Benett and J. M. Xu, Appl. Phys. Lett., 79, 1039 (2001)   DOI   ScienceOn
3 H. Masuda and M. Satoh, Jpn. J. Appl. Phys., 35, L126 (1996)   DOI   ScienceOn
4 T. Iwasaki, T. Motoi and T. Den, Appl. Phys. Lett., 75, 2044 (1999)   DOI
5 M. M. Lohrengel, Mater. Sci. Eng., R11, 243 (1993)   DOI   ScienceOn
6 H. Masuda and K. Fukuda, Science, 268, 199 (1995)   DOI   ScienceOn
7 Y. Yang, H. Chen, Y. Mei, J. Chen, X. Wu and X. Bao, Solid State Communications, 123, 279 (2002)   DOI   ScienceOn
8 V. P. Parkhutic and V. I. Shershulsky, Appl. Phys., 25, 1258   DOI   ScienceOn
9 O. F. Li, L. Zhang and R. M. Metzger, Chem. Mater., 10, 2470 (1998)   DOI   ScienceOn
10 R. C. Furneaux, W. R. Rigby and A. P. Davidson, Nature, 337, 147 (1989)   DOI
11 O. Jessensky, F. Muller and U. Gosele,   DOI   ScienceOn
12 J. W. Diggle, T. C. Downie and C. W. Goulding, Chem. Rev., 69, 365 (1969)   DOI
13 K. Shinizu, K. Kobayashi, P. Skeldon, G. E. Thompson and G. C. Wood, Corrosion Sci., 39, 701 (1997)   DOI   ScienceOn
14 S. Shingubara, O. Okino, Y. Sayama, H. Sakaue and T. Takahagi, Solid State Electronics, 43, 1143 (1999)   DOI   ScienceOn