• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.527-530
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• 2002

A lot of efforts have been focused on the optimization of PIT parameters for Bi-2223/Ag wire. In this paper, initial annealing of Bi-2223/Ag wire to transform Bi-2212 orthorhombic from Bi-2212 tetragonal Precursor was investigated. This initial annealing step at low oxygen partial pressure were to transform Bi-2212 orthorhombic structure and to reduce the formation of second phases at superconducting wire. However Bi-2223 Phases were appeared at higher annealing temperature. Critical currents(Je) of Bi-2223/Ag tapes were sintered at low oxygen Partial pressure were higher than that of the wires sintered at atmosphere condition. In order to investigate the effect of rolling reduction ratio, Bi-2223/Ag HTS tapes were rolled with different reduction ratio. There were no clear difference of Je and filaments shape with various rolling reduction ratio.

• Journal of the Korean institute of surface engineering
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• v.28 no.6
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• pp.376-385
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• 1995

Copper-chromium multilayers with a nominal bilayer thickness of about 400 $\AA$ (200 $\AA$ each) were prepared by dc magnetron sputtering and the evolution of microstructure during heat treatment was investigated by using x-ray diffractometry(XRD), Auger electron spectroscopy(AES) and transmission electron microscopy(TEM). It was observed that an amorphous phase with a thickness of about 40 $\AA$ was formed at the interfaces of the as-deposited Cu/Cr multilayered film using cross-sectional TEM. At elevated temperatures, the Cu(111) reflection showed increasing intensity and decreasing line-width as a result of copper grain growth. The intermixed amorphous phase disappeared after annealing at $250^{\circ}C$ for 1 h and the multilayer structure was stable up to $400^{\circ}C$ for 1 h annealing. At $600^{\circ}C$ annealing, it was observed that the multilayer structure was completely destroyed and copper and chromium phases were fully intermixed.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.381-389
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• 1989

Effects of annealing temperature, time, and atmospehre on the flow characteristics of Atmospheric Pressure Chemical Vapor Deposition-borophosphosilicate glass were investigated. Stable step coverage can be obtained by annealing the BPSG film at 90$0^{\circ}C$ for 30 minutes in N2 atmosphere, but further heat treatment isnot effective. Flow characteristics of the BPSG film was better in steam atmosphere than in N2 atmosphere, and the factors which cause it were analyzed. The concentration of boron in the BPSG film was measured pretty accurately by FTIR spectrum. Boron content in the BPSG film was reduced by annealing treatment. The decrement of boron was greater in steam atmosphere than in the N2 atmosphere. Also it was found from the FTIR spectroscopic analysis that PH3 inhibited the oxidation of B2H6.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.1000-1003
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• 2007

The molten carbonate fuel cell has conspicuous feature and high potential in being used as an energy converter of various fuel to electricity and heat. However, the molten carbonate fuel cell which use strongly corrosive molten carbonate at $650^{\circ}C$ have many problem. One of the material problems is the severe corrosion of the metallic components, such as the separator. The effect of coating and annealing treatment on the corrosion for SUS 304 and SUS 430 which are the candidate materials for molten carbonate fuel cell hardware has been investigated in molten carbonate at $650^{\circ}C$ by using steady state polarization and electrochemical impedance spectroscopy method. It was found that the corrosion current of these SUS 304 and SUS 430 decreased with coating and annealing treatment.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.5
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• pp.261-269
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• 2023

This study aims to investigate the effects of tungsten additions on the microstructure, corrosion characteristics, and hardness of super duplex stainless steel heat-treated at two different annealing temperatures. Under the annealing temperature of 1100℃, the microstructure of the stainless steels consisted mainly of ferrite, while under the annealing temperature of 1000℃, significant amounts of austenite and secondary phases were also observed. In terms of corrosion characteristics in 3.5 wt%NaCl solution, there was not a significant difference due to W addition at the 1100℃ conditions. However, at the 1000℃, a tendency of decreased corrosion resistance was observed with increasing the tungsten content. On the other hand, the micro-hardness of the stainless steel heat-treated 1000℃ showed an increasing trend with tungsten addition. This increase can be mainly attributed to the higher fraction of secondary phases, primarily sigma, known for their high hardness.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.3
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• pp.115-120
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• 2023

ZnO/Cu/ZnO (ZCZ) thin film deposited on the glass substrate with DC and RF magnetron sputtering was rapid thermal annealed (RTA) and then effect of thermal temperature on the opto-electical and transparent heater properties of the films were considered. The visible transmittance and electrical resistivity are depends on the annealing temperature. The electrical resistivity decreased from 1.68 × 10^-3 Ωcm to 1.18 × 10^-3 Ωcm and the films annealed at 400℃ show a higher transmittance of 78.5%. In a heat radiation test, when a bias voltage of 20 V is applied to the ZCZ film annealed at 400℃, its steady state temperature is about 70.7℃. In a repetition test, the steady state temperature is reached within 15s for all of the bias voltages.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.439-444
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• 2024

This study investigates the post-thermal treatment effects on the efficiency of silicon heterojunction solar cells, specifically examining the influence of annealing on p-type microcrystalline silicon oxide and ITO thin films. By assessing changes in carrier concentration, mobility, resistivity, transmittance, and optical bandgap, we identified conditions that optimize these properties. Results reveal that appropriate annealing significantly enhances the fill factor and current density, leading to a notable improvement in overall solar cell efficiency. This research advances our understanding of thermal processing in silicon-based photovoltaics and provides valuable insights into the optimization of production techniques to maximize the performance of solar cells.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.8 no.6
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• pp.105-110
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• 2008

We have investigated the high temperature rapid thermal annealing of GaN epilayers in nitrogen atmosphere. Annealing has been performed in a rapid thermal annealing furnace at $950^{\circ}C$. The effect of rapid thermal annealing of GaN was studied by x-ray diffraction. The Bragg peak shifts toward larger angle as the annealing time increases. The full width at half maximum (FWHM) of the peak slightly increase, followed by decreases, and increases again as the thermal treatment time increases. The improvement of structural properties of the samples was observed after rapid thermal annealing under optimum conditions. This improvement in crystal quality is due to a reduction of the spread in the lattice parameter in epilayers.

• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.137-142
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• 2008

The parasitic resistance is studied to silicon/metal contact junction for improving device performance and to lower contact/serial resistance silicide in natural sequence. In this paper constructs the stepwise Ni silicide process for parasitic resistance reduction for silicon/metal contact junction. We have investigated multi-step Ni silicide on SiGe substrate with stepwise annealing method as an alternative to compose more thermally reliable Ni silicide layer. Stepwise annealing for silicide formation is exposed to heating environment with $5^{\circ}C/sec$ for 10 seconds and a dwelling for both 10 and 30 seconds, and ramping-up and the dwelling was repeated until the final annealing temperature of $700\;^{\circ}C$ is achieved. Finally a direct comparison for single step and stepwise annealing process is obtained for 20 nm nickel silicide through stepwise annealing is $5.64\;{\Omega}/square$ at $600\;^{\circ}C$, and it is 42 % lower than that of as nickel sputtered. The proposed stepwise annealing for Ni silicidation can provide the least amount of NiSi at the interface of nickel silicide and silicon, and it provides lower resistance, higher thermal-stability, and superior morphology than other thermal treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.395-397
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• 2002

Dielectric thin films of Pb$\_$0.72/La$\_$0.28/Ti$\_$0.93/O$_3$(PLT(28)) have been deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrates in-situ by pulsed laser deposition using different annealing and deposition processes. We have investigated the effect of hydrogen annealing on the ferroelectric properties of PLT thin films and found that the annealing process causes the diffusion of hydrogen into the ferroelectric film resulting in the destruction of polarization. Two-step process to grow PLT films was adopted and verified to be useful to enlarge the grain size of the film. Structural properties including dielectric constant, and ferroelectric characteristics of PLT thin films were shown to be strongly influenced by grain size. The film deposited by using two-step process including pre-annealing treatment has a strong (111) orientation. However, the films deposited by using single-step process with hydrogen annealing process shows the smallest grain size.