• Korean Journal of Materials Research
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• v.10 no.6
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• pp.437-444
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• 2000

We investigated the effect of substrate temperature, chemical composition and post-deposition heat-treatment on the crystal structure and electrical transport of $La_{1-x}Sr_xMnO_{3-{\delta}}$(0.19${\leq}x{\leq}$0.31) thin films. As-prepared $La_{1-x}Sr_xMnO_{3-{\delta}}$ films grown at $500^{\circ}C$ by sputter techniques were found to have the pseudo-tetragonal system(a/c=0.97) and a highly preferential <001> orientation. The films were changed to be of the cubic system by post-deposition annealing at around $900^{\circ}C$. A main target of $La_{0.67}Sr_{0.33}MnO_3$ as well as auxliary targets of $La_{0.3}Sr_{0.7}MnO_3$ ceramics were co-sputtered to control the chemical composition of the film. The Sr content(x) of the film ranged from 0.19 to 0.31, depending on the number of the auxiliary target. When x increased from 0.19 to 0.31, the electrical resistivity of the film decreased and the transition temperature between metal and semiconductor shifted to higher temperature. With a magnetic field of 0.18 T, the magneto-resistance ratio (MR(%) = (${\rho}_o-{\rho}_H/{\rho}_H$) of the $La_{0.69}Sr_{0.31}MnO_3$ thin film was about 390%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.3
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• pp.124-127
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• 2005

It is demonstrated that the annealing process for Ti in-diffusion to z-cut $LiNbO_3$ at temperature lower than the curie temperature in a platinum (Pt) box can cause a ferroelectric micro-domain inversion at the +z surface and Li out-diffusion, therefore which should be avoided or suppressed for waveguide type periodically poled lithium niobate (PPLN) devices. The depth of the inversion layer depends on the Ti-diffusion conditions such as temperature, atmosphere, the sealing method of $LiNbO_3$ in the Pt box and crystal orientation is experimentally examined. The result shows that the polarization-inverted domain boundary appears at the only +z surface and its thickness is about $1.6{\mu}m$. Also, for the etched $LiNbO_3$, surface the domain shape was observed by the optical microscope and atomic force microscopy (AEM), and distribution of the cation concentrations in the $LiNbO_3$ crystal by the secondary ion mass spectrometry (SIMS).

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.6
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• pp.10-16
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• 2013

Ultra-fine planing and micro punching are separately used for improving surface roughness and machining dot patterns, respectively, of metal molds. If these separate machining processes are applied for machining of identical molds, there could be an aligning mismatch between the machine tool and the mold. A hybrid machining system combining ultra-fine planing and micro punching was newly developed in this study in order to solve this mismatch; hybrid process technology was also developed for machining dot patterns on a mirror surface of a metal mold. The hybrid machining system has X, Y, and Z axes, and a cam axis for ultra-fine planing. The cam axis and attachable and removable solenoid actuators for micro punching can make large and small sizes of dot patterns, respectively. Ultra-fine planing was applied in the first place to improve the surface roughness of a metal mold; the measured surface roughness was about 20nm. Then, micro punching was applied to machine dot patterns on the same mold. It was possible to control the diameter of the dot patterns by changing the input voltage of the solenoid actuator. Before machining, severe inhomogeneous plastic deformation around the machined dot patterns was also removed by annealing heat treatment. Therefore, it was verified that metal molds with dots patterns for optical products can be machined using a hybrid machining system and the hybrid process technology developed in this study.

• Journal of the Korean Solar Energy Society
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• v.23 no.2
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• pp.59-70
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615{\AA}$ and $11.025{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $5.01\times10^{17}cm^{-3}$ and $245cm^2/V{\cdot}s$ at 293K. respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.7998 eV-($8.7489\times10^{-4}$ eV/K)$T^2$/(T+335K). After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU},\;V_{Se},\;Cu_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.864-873
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• 1995

Amorphous $Fe_{73.5}Cu_{1}Nb_{3}Si_{16.5}B_{6}$ ribbons were annealed for different time at $500^{\circ}C$ and $552^{\circ}C$, just before and after the exothermic reaction in DSC curve. The development of nanocrystalline phase was investigated by means of $M\"{o}ssbsuer$ spectroscopy. The crystalline phase consists mainly of $DO_{3}Fe-Si$. Though slight in amount (5%), another ferromagnetic phase which could be presumed $t-Fe_{3}B$ was detected Si content of $DO_{3}Fe-Si$, Si/(Fe+Si), was 0.218 under the heat treatment at $500^{\circ}C$ for 60 min and 0.222 at $552^{\circ}C$ for 10 min. Since then both of those values decreased with time until 120 min and finally these two values remained constant at 0.210. The variation in Si content with annealing time results in the variation in the hyperfine field and the isomer shift. The increase in the mean hyperfine fields and the decrease in the mean isomer shifts of Fe-Si are caused by the increase in Si content. The volume fractions of residual amorphous phase rapidly decrease during the early stage of annealing and come nearer to saturation after 120 min both at $500^{\circ}C$ and $552^{\circ}C$. The decrease in the mean hyperfine field of residual amorphous. in spite of slight changes in the volume fractions of Fe-Si and of residual amorphous after 120 min. is caused by the increase in the content of Nb and B in residual amorphous phase. The saturated volume fraction of the crystalline phase was 81% for $500^{\circ}C$ (180 min) and 77% for $552^{\circ}C$ (960 min), different from expectation.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.700-708
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• 1996

Electroless plating technique was utilized to flip chip bonding to improve surface mount characteristics. Each step of plating procedure was studied in terms pf pH, plating temperature and plating time. Al patterned 4 inch Si wafers were used as substrstes and zincate was used as an activation solution. Heat treatment was carried out for all the specimens in the temperature range from room temperature to $400^{\circ}C$ for $30^{\circ}C$ minutes in a vacuum furnace. Homogeneous distribution of Zn particles of size was obtained by the zincate treatment with pH 13 ~ 13.5, solution concentration of 15 ~ 25% at room temperature. The plating rates for both Ni-P and Au electroless plating steps increased with increasing the plating temperature and pH. The main crystallization planes of the plated Au were found to be (111) a pH 7 and (200) and (111) at pH 9 independent of the annealing temperature.