• 한국철도학회논문집
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• 제15권3호
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• pp.217-223
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• 2012

고속열차 객실 유리창 타입에 따른 충격 파손 특성을 비교 연구하기 위하여 다양한 종류의 유리창 내충격시험 규격을 검토하였으며, 자갈 비산에 의한 유리창 파손 특성을 고려하여 내충격시험을 실시하였다. 외부 충격면이 일반유리, 반강화유리, 강화유리 모두 팁 끝이 뾰족한 낙하체에 대해 낮은 높이에서도 파괴가 잘 일어났고, 파괴될 때의 양상은 일반유리의 경우 선 파괴가 부분적으로 발생하였고, 반강화유리의 경우 선 파괴가 전체적으로 발생하였으며, 강화유리의 경우 전체적으로 입자가 잘게 부숴지며 파괴되었다. 낙하체 팁 형상을 뾰족한 것에서부터 뭉툭한 것으로 변화시킬 때 더 높은 높이에서 파괴가 일어남을 알 수 있었고, 그 정도는 일반유리보다 강화유리가 팁 끝이 뭉툭한 낙하체에 대해서 더 높은 강도를 가짐을 알 수 있었다. 유리창 보호용 필름이 적용되었을 때 강도 증가의 효과가 있었다. 실제 자갈을 자유 낙하시켜 파손 특성을 비교하였는데, 3가지 경우 모두에 대해서 보호필름이 적용되지 않았을 때는 파괴되었고, 보호필름을 적용하였을 경우에는 잘 파괴되지 않음을 확인할 수 있었다.

• 한국결정학회지
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• 제11권3호
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• pp.167-172
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• 2000

CaTiO₃:Pr phosphor thin films were prepared on Si(100), ZnO/glass, Corning glass and ITO/glass by rf magnetron reactive sputtering. The effects of deposition parameters such as oxygen partial pressure, substrate temperature, and annealing conditions on crystallinity and compositional variation of the films were investigated. PL spectra of CaTiO₃:Pr phosphor thin films exhibited red regime peaking at 613 nm and enhanced PL intensity was observed for the film annealed in vacuum atmosphere as compared to the deposit annealed in N₂ environment.

• Structural Engineering and Mechanics
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• 제39권3호
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• pp.303-316
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• 2011

Experimental tests have shown that glass exhibits very different strengths when tested under biaxial and uniaxial conditions. This paper presents a study on the effects of biaxial stresses on the notional ultimate strength of glass. The study involved applying the theory of elasticity and finite element analysis of the Griffith flaw in the micro scale. The strain intensity at the tip of the critical flaw is used as the main criterion for defining the limit state of fracture in glass. A simple and robust relationship between the maximum principal stress and the uniaxial stress to cause failure of the same glass specimen has been developed. The relationship has been used for evaluating the strength values of both new and old annealed glass panels. The characteristic strength values determined in accordance with the test results based on 5% of exceedance are compared with provisions in the ASTM standard.

• 대한금속재료학회지
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• 제50권8호
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• pp.557-562
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• 2012

Self-organized ruthenium (Ru) dots were fabricated by $400^{\circ}C$ RTA (rapid thermal annealing) and ALD (atomic layer deposition). The dots were produced under the $400^{\circ}C$ RTA conditions for 10, 30 and 60 seconds on all Si(100)/200 nm-SiO2, glass, and glass/fluorine-doped tin oxide (FTO) substrates. Electrical sheet resistance, and surface microstructure were examined using a 4-point probe and FE-SEM (field emission scanning electron microscopy). Ru dots were observed when a 30 nm-Ru layer on a Si(100)/200 nm-SiO2 substrate was annealed for 10, 30 and 60 seconds, whereas the dots were only observed on a glass substrate when a 50 nm-Ru layer was annealed on glass. For a glass/FTO substrate, RTA <30 seconds was needed for 30 nm Ru thick films. Those dots can increase the effective surface area for silicon and glass substrates by up to 5-44%, and by 300% for the FTO substrate with a < $20^{\circ}$ wetting angle.

• 한국표면공학회지
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• 제48권6호
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• pp.322-328
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• 2015

We investigated the diffusion behaviors, electrical properties, microstructures, and composition of In-Ga-Zn-O (IGZO) oxide thin films deposited by radio frequency reactive magnetron sputtering with increasing annealing temperatures. The samples were deposited at room temperature and then annealed at 300, 400, 500, 600 and $700^{\circ}C$ in air ambient for 2 h. According to the results of time-of-flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy, no diffusion of In, Ga, and Zn components were observed at 300, 400, 500, $600^{\circ}C$, but there was a diffusion at $700^{\circ}C$. However, for the sample annealed at $700^{\circ}C$, considerable diffusion occurred. Especially, the concentration of In and Ga components were similar at the IGZO thin film but were decreased near the interface between the IGZO and glass substrate, while the concentration of Zn was decreased at the IGZO thin film and some Zn were partially diffused into the glass substrate. The high-resolution transmission electron microscopy results showed that a phase change at the interface between IGZO film and glass substrate began to occur at $500^{\circ}C$ and an unidentified crystalline phase was observed at the interface between IGZO film and glass substrate due to a rapid change in composition of In, Ga and Zn at $700^{\circ}C$. The best values of electron mobility of $15.5cm^2/V{\cdot}s$ and resistivity of $0.21{\Omega}cm$ were obtained from the sample annealed at $600^{\circ}C$.

• 반도체디스플레이기술학회지
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• 제17권3호
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• pp.31-35
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• 2018

Tungsten disulfide($WS_2$) thin films were directly deposited by direct-current(DC) sputtering and annealed by rapid thermal processing(RTP) to materialize two-dimensional p-type transition metal dichalcogenide (TMDC) thin films on soda-lime glass substrates without any complicated exfoliation/transfer process. $WS_2$ thin films deposited at various DC sputtering powers from 80 W to 160W were annealed at different temperatures from $400^{\circ}C$ to $550^{\circ}C$ considering the melting temperature of soda-lime glass. The optical microscope results showed the stable surface morphologies of the $WS_2$ thin films without any defects. The X-ray photoelectron spectroscopy (XPS) results and the Hall measurement results showed stable binding energies of W and S and high carrier mobilities of $WS_2$ thin films.

• 한국전기전자재료학회논문지
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• 제15권6호
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• pp.479-485
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• 2002

We have investigated the effects of various wafers cleaning on glass/Si bonding using 4 inch Pyrex glass wafers and 4 inch silicon wafers. The various wafer cleaning methods were examined; SPM(sulfuric-peroxide mixture, $H_2SO_4:H_2O_2$ = 4 : 1, $120^{\circ}C$), RCA(company name, $NH_4OH:H_2O_2:H_2O$ = 1 : 1 : 5, $80^{\circ}C$), and combinations of those. The best room temperature bonding result was achieved when wafers were cleaned by SPM followed by RCA cleaning. The minimum increase in surface roughness measured by AFM(atomic force microscope) confirmed such results. During successive heat treatments, the bonding strength was improved with increased annealing temperatures up to $400^{\circ}C$, but debonding was observed at $450^{\circ}C$. The difference in thermal expansion coefficients between glass and Si wafer led debonding. When annealed at fixed temperatures(300 and $400^{\circ}C$), bonding strength was enhanced until 28 hours, but then decreased for further anneal. To find the cause of decrease in bonding strength in excessively long annealing time, the ion distribution at Si surface was investigated using SIMS(secondary ion mass spectrometry). tons such as sodium, which had been existed only in glass before annealing, were found at Si surface for long annealed samples. Decrease in bonding strength can be caused by the diffused sodium ions to pass the glass/si interface. Therefore, maximum bonding strength can be achieved when the cleaning procedure and the ion concentrations at interface are optimized in glass/Si wafer direct bonding.

• Fibers and Polymers
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• 제6권4호
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• pp.284-288
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• 2005

Poly(ethylene terephthalate) was annealed at different temperature and pressure of supercritical carbon dioxide $(CO_2)$ using samples quenched from the melt. Crystallization and molecular relaxation behavior due to $CO_2-annealing$ of samples were investigated using differential scanning calorimetric and dynamic mechanical measurements. The glass transition and crystallization temperatures significantly decreased with increasing temperature and pressure of $CO_2$. The dynamic mechanical measurement of samples annealed at $150^{\circ}C$ in supercritical $CO_2$ showed three relaxation peaks, corresponding to existence of different amorphous regimes such as rigid, intermediate, and mobile domains. As a result, the mobile chains were likely to facilitate crystallization in supercritical state. It also led to the decreased modulus of $CO_2-annealed$ samples with increasing pressure.

• 한국세라믹학회지
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• 제48권1호
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• pp.86-93
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• 2011

Transparent plasma display can be realized by developing the synthetic chemistry of appropriate nanophosphors and generating nanophosphor-based transparent luminescent layers. For this goal, red-emitting $Y(V_{0.5},\;P_{0.5})O_4$:Eu nanophosphors were synthesized by a facile hydrothermal route at $200^{\circ}C$ for 48 h and the resulting nanophosphors were subsequently annealed at $800^{\circ}C$ at an ambient atmosphere. The crystallographic structure, morphology, and emission property of the as-synthesized and annealed nanophosphors were compared. Choosing 2-methoxyethanol as a dispersion medium and applying a standard sonication, well-dispersed nanophosphor solutions could be prepared. Using these dispersions, visible transparent nanophosphor layers were spin-deposited on glass substrates. By combining $Y(V_{0.5},\;P_{0.5})O_4$:Eu nanophosphor layer/glass substrate as a rear plate with a front plate used in a conventional plasma display panels (PDPs), mini-sized transparent red-emitting PDPs were constructed. Transmittance and luminance properties of two transparent test panels using as-synthesized versus $800^{\circ}C$-annealed nanophosphors were characterized and compared.

• 마이크로전자및패키징학회지
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• 제10권4호
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• pp.61-64
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• 2003

단일이온교환된 유리의 응력 특성을 관찰하기 위하여 파괴분석을 하였다. 프로세스변화로 인하여 이온교환된 유리의 응력층이 유리표면에서 안쪽으로 이동하였다. 깃털모양자국(hackle marker)과 거울면(mirror region)의 크기가 이온교환프로세스의 온도, 시간에 따라 변화하였으며, 파괴강도에 비례하였다. 또한 Indenter를 사용하여 응력층을 파괴하는 경우 일반유리와 같은 파괴특성을 나타냈다.