• Journal of the Korean Institute of Telematics and Electronics
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• 제27권11호
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• pp.126-134
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• 1990

In order to implement high-speed data acquistion system in CMOS VLSI technology, means must be found to overcome the relatively low transconductance and large device mismatch characteristic of MOS device. Because of these device limitations, circuit design approaches tradition-ally used in high-speed bipolar analog-to-digital converter(ADC) are suited to CMOS implementation. Also the design of VLSI CMOS comparator wherein voltage comparision is accomplished by means of a pipelined cascade RSA (Regenerative Sense Amplifier). So, in this paper we designed the A/D converter incorporates the pipelined CMOS comparator.

• Journal of the Korean Institute of Telematics and Electronics A
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• 제33A권6호
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• pp.230-238
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• 1996

In this paper, digital corrction and calibration circuit for a high-resolution CMOS pipelined A/D converter are proposed. The circuits were actually applied to a 12 -bit 4-stage pipelined A/D converter which was implemented in a 0.8${\mu}$m p-well CMOS process. The proposed digital correction logic is based on optimum multiplexer and two nonoverlapping clock phases resulting in a small die area snd a modular pipelined architecture. The propsoed digital calibration logic which consists of calibration control logic, error averaging logic, and memory can effectively perform self-calibration with little modifying analog functional bolcks of a conventional pipelined A/D conveter.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제47권5호
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• pp.16-23
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• 2010

This paper presents 6bit 250MS/s flash A/D converter which can be applied to wireless communication system. To solve the problem of large power consumption in flash A/D converter, control algorithm by input signal level is used in comparator stage. Also, input voltage range detector circuit is used in reference resistor array to minimize the dynamic power consumption in the comparator. Compared with the conventional A/D converter, the proposed A/D converter shows 4.3% increase of power consumption in analog and a seventh power consumption in digital, which leads to a half of power consumption in total. The A/D converter is implemented in a $0.18{\mu}m$ CMOS 1-poly 6-metal technology. The measured results show 106mW power dissipation with 1.8V supply voltage. It shows 4.1bit ENOB at sampling frequency 250MHz and 30.27MHz input frequency.

• Proceedings of the KIEE Conference
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1206-1208
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• 1993

This paper is to study and realize a measuring device for complex dielectric constants. The device is consisted in order of interface unit, external RAM, programmable counter, D/A converter, measuring circuit, Sample & Hold circuit, A/D converter and related control circuits. Various excitation waves are digitalized and sent to the 4096 static RAM by personal computer. These data saved in the RAM are converted to analog excitation waves through D/A converter. The frequency of excitation wave is depend on the read-out speed of the RAM according to clock pulses. Such generated waves are applied to dielectrics under test and their responses are sampled and converted to digital data through A/D converter. The computer takes the digital data and calculates finally the complex dielectric constants. The frequencies for Measurement ranges from 0.04 Hz to 10 kHz.

• Journal of the Korea Convergence Society
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• 제7권1호
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• pp.9-15
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• 2016

In this paper, we describe the design of a high speed data acquisition system(DAS) with STM32 processor based on Cortex-M4. The system is used for the sensor devices to collect raw data on production lines at factory and send them to the servo computer in real time. The system is designed for multi functions with universal asynchronous receiver and transmitter(UART), analog to digital converter(ADC), digital to analog converter(DAC), and general purpose input output(GPIO). those are well tested for various data acquisition and high speed motor control in real time.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권4호
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• pp.211-216
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• 2003

This work describes a 3 V 12b 100 MS/s CMOS digital-to-analog converter (DAC) for high-speed communication system applications. The proposed DAC is composed of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs, trading-off linearity, power consumption, chip area, and glitch energy with this process. The low-glitch switch driving circuits are employed to improve linearity and dynamic performance. Current sources of the DAC are laid out separately from the current-cell switch matrix core block to reduce transient noise coupling. The prototype DAC is implemented in a 0.35 um n-well single-poly quad-metal CMOS technology and the measured DNL and INL are within ${\pm}0.75$ LSB and ${\pm}1.73$ LSB at 12b, respectively. The spurious-free dynamic range (SFDR) is 64 dB at 100 MS/s with a 10 MHz input sinewave. The DAC dissipates 91 mW at 3 V and occupies the active die area of $2.2{\;}mm{\;}{\times}{\;}2.0{\;}mm$

• Proceedings of the IEEK Conference
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.69-72
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• 2002

This paper proposed a new charge-shared switching MDAC for a pipelined A/D converter The proposed architecture accomplishes the same function of a conventional multiplying-digital-to-analog converter (MDAC). By adopting the proposed scheme, about 40% of the total capacitances could be reduced and the speed of the MDAC increases. The performance of the charge-shared switching MDAC has been Proved by HSPICE simulations.

• Proceedings of the IEEK Conference
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.164-167
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• 2000

This paper introduces the design of high-speed analog-to-digital converter for hard disk drive (HDD) read channel. This is based on autozero technique for low-error rate, and Double Speed Dual ADC(DSDA) technique lot efficiently increasing the conversion speed of A/D converter. This An is designed by 6bit resolution, 800M sample/s maximum conversion rate, 390㎽ power dissipation, one clock cycle latency in 0.65 $\mu\textrm{m}$ CMOS technology.

• Proceedings of the IEEK Conference
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.153-156
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• 2001

This paper describes a 12-bit high speed pipeline CMOS A/D converter. The A/D converter simulated the 0.35${\mu}{\textrm}{m}$ n-well CMOS technology. The results show DNL and INL of $\pm$0.5LSB and $\pm$1.0LSB, conversion rate of 100Msamples/s, and power dissipation of 500㎽ with a power supply of 3.3V

• Journal of the Institute of Electronics Engineers of Korea SC
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• 제40권1호
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• pp.19-29
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• 2003

This paper proposes a CMOS readout circuit for uncooled micro-bolometer arrays adopting a four-point step calibration technique. The proposed readout circuit employing an 11b analog-to-digital converter (ADC), a 7b digital-to-analog converter (DAC), and an automatic gain control circuit (AGC) extracts minute infrared (IR) signals from the large output signals of uncooled micro-bolometer arrays including DC bias currents, inter-pixel process variations, and self-heating effects. Die area and Power consumption of the ADC are minimized with merged-capacitor switching (MCS) technique adopted. The current mirror with high linearity is proposed at the output stage of the DAC to calibrate inter-pixel process variations and self-heating effects. The prototype is fabricated on a double-poly double-metal 1.2 um CMOS process and the measured power consumption is 110 ㎽ from a 4.5 V supply. The measured differential nonlinearity (DNL) and integrat nonlinearity (INL) of the 11b ADC show $\pm$0.9 LSB and $\pm$1.8 LSB, while the DNL and INL of the 7b DAC show $\pm$0.1 LSB and $\pm$0.1 LSB.