• 제목/요약/키워드: Amplifiers

검색결과 731건 처리시간 0.02초

Power Amplifiers and Transmitters for Next Generation Mobile Handsets

  • Choi, Jin-Sung;Kang, Dae-Hyun;Kim, Dong-Su;Park, Jung-Min;Jin, Bo-Shi;Kim, Bum-Man
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제9권4호
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    • pp.249-256
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    • 2009
  • As a wireless handset deals with multiple application standards concurrently, RF transmitters and power amplifiers are required to be more power efficient and reconfigurable. In this paper, we review the recent advances in the design of the power amplifiers and transmitters. Then, the systematic design approaches to improve the performance with the digital baseband signal processing are introduced for the next generation mobile handset.

Performance Comparison between Inverse Class-F and Class-F Amplifiers Based on the Waveform Analysis

  • Yang, Youn-goo;Woo, Young-Yun;Kim, Bum-man
    • Journal of electromagnetic engineering and science
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    • 제2권1호
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    • pp.5-10
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    • 2002
  • We have analized the inverse class-F and class-F amplifiers using their waveforms. From the analytic equations derived from the analysis, we have calculated tole efficiencies, output powers, DC power dissipations, and optimum fundamental load impedances of the inverse class-F and class-F amplifiers. We also have compared them for various operation conditions, which include the same peak current, saute DC power dissipation, same fundamental RF output power, and same fundamental load impedance with different Ron(on-resistance). These analyses have clearly shown the performance limitations, advantages, and guide to the optimized design of the inverse class-F amplifiers.

193 nm에서 낮은 흡수도를 갖는 새로운 산 증식제의 합성 및 특성연구 (Synthesis and Characterization of Novel Acid Amplifiers with a Low Absorbance at 193 nm)

  • 소진호;정용석;최상준;정연태
    • 한국전기전자재료학회논문지
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    • 제17권8호
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    • pp.806-811
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    • 2004
  • 1-Hydroxy-4-(2-naphthalenesulfonyloxy) cyclohexane(1), 1,4-di-(2-naphthalenesulfonyloxy) cyclohexane(2), 1-hydroxy-4-(2-thiophenesulfonyloxy) cyclohexane(3), 1,4-di-(2-thiophenesulfonyloxy) cyclohexane(4) were synthesized and evaluated for their performance as novel acid amplifiers for 193 nm photoresists. These acid amplifiers(1-4) showed reasonable thermal stability at the usual resist-processing temperature, 9$0^{\circ}C$-12$0^{\circ}C$. And estimated by the sensitivity curve, (1)-(4) enhanced the sensitivity of poly(tert-butyl methacrylate) film by 1.2-1.4 times, compared to poly(tert-butyl methacrylate) film whithout acid amplifiers, in the presence of a photoacid generator.

A New High Efficiency and Low Profile On-Board DC/DC Converter for Digital Car Audio Amplifiers

  • Kim Chong-Eun;Han Sang-Kyoo;Moon Gun-Woo
    • Journal of Power Electronics
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    • 제6권1호
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    • pp.83-93
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    • 2006
  • A new high efficiency and low profile on-board DC/DC converter for digital car audio amplifiers is proposed. The proposed converter shows low conduction loss due to the low voltage stress of the secondary diodes, a lack of DC magnetizing current for the transformer, and a lack of stored energy in the transformer. Moreover, since the primary MOSFETs are turned-on under zero-voltage-switching (ZVS) conditions and the secondary diodes are turned-off under zero-current-switching (ZCS) conditions, the proposed converter has minimized switching losses. In addition, the input filter can be minimized due to a continuous input current, and an output inductor is absent in the proposed converter. Therefore, the proposed converter has the desired features, high efficiency and low profile, for a viable power supply for digital car audio amplifiers. A 60W industrial sample of the proposed converter has been implemented for digital car audio amplifiers with a measured efficiency of $88.3\%$ at nominal input voltage.

Performance Evaluation of Bidirectional Optical Amplifiers for Amplified Passive Optical Network Based on Broadband Light Source Seeded Optical Sources

  • Kang, Byoung-Wook;Kim, Chul-Han
    • Journal of the Optical Society of Korea
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    • 제15권1호
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    • pp.4-8
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    • 2011
  • We have evaluated the performances of bidirectional optical amplifiers which were suited for the cost-effective implementation of amplified bidirectional passive optical networks (PONs). First, we measured the maximum gains of two simple bidirectional optical amplifiers implemented without using any optical components for the suppression of reflected signals. From the results, the maximum gains of two simple bidirectional amplifiers with a broadband light source (BLS) seeded optical source were limited to be 27 dB due to the reflection-induced in-band crosstalk, when the reflectance coefficients were measured to be -33 dB in both directions. Then, we have also implemented a bidirectional optical amplifier with two band splitters for the amplified bidirectional PON where the two different wavelength bands were allocated to the downstream and upstream signals transmission. In our measurement, we confirmed that the maximum gain of bidirectional optical amplifier with two band splitters could be increased to more than 30 dB owing to the efficient suppression of in-band crosstalk.

Wide Band-gap FETs for High Power Amplifiers

  • Burm, Jin-Wook;Kim, Jae-Kwon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권3호
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    • pp.175-181
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    • 2006
  • Wide band-gap semiconductor electron devices have made great progresses to produce very high power amplifiers for various wireless standards. The advantages of wide band-gap electronic devices and their progresses are summarized in this paper.

6-18 GHz MMIC Drive and Power Amplifiers

  • Kim, Hong-Teuk;Jeon, Moon-Suk;Chung, Ki-Woong;Youngwoo Kwon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권2호
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    • pp.125-131
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    • 2002
  • This paper presents MMIC drive and power amplifiers covering 6-18 ㎓. For simple wideband impedance matching and less sensitivity to fabrication variation, modified distributed topologies are employed in the both amplifiers. Cascade amplifiers with a self-biasing circuit through feedback resistors are used as unit gain blocks in the drive amplifier, resulting in high gain, high stability, and compact chip size. Self impedance matching and high-pass, low-pass impedance matching networks are used in the power amplifier. In measured results, the drive amplifier showed good return losses ($S_11,{\;}S_{22}{\;}<{\;}-10.5{\;}dB$), gain flatness ($S_{21}={\;}16{\;}{\pm}0.6{\;}dB$), and $P_{1dB}{\;}>{\;}22{\;}dBm$ over 6-18 GHz. The power amplifier showed $P_{1dB}{\;}>{\;}28.8{\;}dBm$ and $P_{sat}{\;}{\approx}{\;}30.0{\;}dBm$ with good small signal characteristics ($S_{11}<-10{\;}dB,{\;}S_{22}{\;}<{\;}-6{\;}dB,{\;}and{\;}S_{21}={\;}18.5{\;}{\pm}{\;}1.25{\;}dB$) over 6-18 GHz.

고성능 연산 증폭기의 설계 자동화 (Design Automation of High-Performance Operational Amplifiers)

  • 유상대
    • 센서학회지
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    • 제6권2호
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    • pp.145-154
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    • 1997
  • 회로 시뮬레이션과 국부적 탐색을 갖는 시뮬레이티드 아닐링을 사용한 새로운 탐색 전략에 기초하여 고성능 연산 증폭기의 설계 자동화를 위한 기법을 제안하였다. 임의의 연산 증폭기 구조와 성능 규격에 대해서, 이산 설계 변수들을 갖는 비용 함수의 이산 최적화를 통해 연산 증폭기의 설계가 이루어진다. 설계 시간의 단축을 위해서 전용 회로 시뮬레이터와 몇 가지 휴리스틱을 사용하였다. 스마트 센서와 10 비트 25 MS/s 파이프라인 A/D 변환기에 사용 가능한 저전력 고속 전차동 CMOS 연산 증폭기의 설계를 통해서, 제안된 기법을 사용하여 개발된 설계 도구는 적은 설계 지식과 설계 노력을 가지고 고성능 연산 증폭기를 설계하는데 사용될 수 있음을 보였다.

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A Study on the Improvement of the Performance of Power Amplifiers by Deflected Ground Structure

  • Lim, Jong-Sik;Lee, Young-Taek;Han, Jae-Hee;Nam, Sang-wook;Park, Jun-Seok;Ahn, Dal;Kim, Byung-Sung
    • Journal of electromagnetic engineering and science
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    • 제1권2호
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    • pp.146-155
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    • 2001
  • This paper describes the improvement in performance of power amplifiers by Defected Ground Structure (DGS) for several operating classes. Due to its excellent capability of harmonic rejection, DGS plays a threat role in improving the main performance of power amplifiers such as output power, power added efficiency, harmonic rejection, and intermodulation distortion (IMD3). In order to verify the improvement in performance of power amplifiers by DGS, measured data for a 30 Watts power amplifier with and without DGS attached under several operating classes are illustrated and compared. The principle of the performance improvement is described with simple Volterra nonlinear transfer functions. Also, the measured performance far two cases, i.e. with and without DGS, and the quantities of improvement fur the various operating classes are compared and discussed.

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VSAT용 14.0-14.5 GHz 3와트 SSPA의 설계 및 제작연구 (Design of 14.0-14.5 GHz 3Watt SSPA for VSAT Applications)

  • 전광일;박진우
    • 한국통신학회논문지
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    • 제19권5호
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    • pp.920-927
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    • 1994
  • 본 논문에서는 소형, 저가격으로 데이터와 음성 신호의 양방향 전송을 위한 VSAT용 14.0~14.5GHz3Watt SSPA의 설계와 실험결과를 기술하였다. 설계된 SSPA는 VSAT에서 요구되는 성능을 만족시키기 위하여 저잡음 GaAs FET를 이용한 두단의 저잡음 증폭기, 중전력 GaAs FET를 이용한 두단의 중전력 증폭기, \ulcorner시 고출력 증폭을 위하여 내부 정합된 전력 GaAs FET와 3dB branch line coupler를 이용한 balanced 증폭기를 포함하는 삼단 전력증폭기로 구성 하였다. 제작된 SSpA의 특성으로 소신호 전력이득 42dB, 잡음지수 7dB, 1dB 이득 억압점에서 출력 신호 35dBm. 그리고 입출력 VSWR로 2.0 그리고 1.5를 측정할 수 있었다.

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