• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.133-138
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• 2019

The a-InGaZnO (a-IGZO) thin film transistor (TFT) has the advantages of larger mobility than that of amorphous silicon TFTs, acceptable reliability and uniformity over a large area, and low process cost. A capacitive-type touch sensor was studied with an a-IGZO TFT that can be used on the front side of a display due to its transparency. A capacitive sensor detects changes of capacitance between the surface of the finger and the sensor electrode. The capacitance varies according to the distance between the sensor plate and the touching or non-touching of the sensing electrode. A capacitive touch sensor using only one a-IGZO TFT was developed with the reduction of two bus lines, which made it easy to reduce the pixel pitch. The proposed sensor circuit maintained the amplification performance, which was investigated for various drive conditions.

• Journal of Navigation and Port Research
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• v.28 no.3
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• pp.213-219
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• 2004

In this paper, a LNA(Low Noise Amplifier) has been developed, which is operating at L-band i.e., 1452∼1492 MHz for satellite DAB(Digital Audio Brcadcasting) receiver. The LNA is designed to improve input and output reflection coefficient and VSWR(Voltage Standing Wave Ratio) by balanced amplifier. The LNA consists of low noise amplification stage and gain amplification stage, which make a using of GaAs FET ATF-10136 and VNA-25 respectively, and is fabricated by hybrid method. To supply most suitable voltage and current, active bias circuit is designed Active biasing offers the advantage that variations in $V_P$ and $I_{DSS}$ will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets $V_{gs}$ for the desired drain voltage and drain current. The LNA is fabricated on FR-4 substrate with RF circuit and bias circuit, and integrated in aluminum housing. As a reults, the characteristics of the LNA implemented more than 32 dB in gain. 0.2 dB in gain flatness. lower than 0.95 dB in noise figure, 1.28 and 1.43 each input and output VSWR, and -13 dBm in $P_{1dB}$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.10
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• pp.33-41
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• 2000

Pyroelectric characteristics such as voltage responsivity, noise equivalent power and detectivity are modeled 3-dimensionaly considering th interaction of each parameters. Also, the circuit is designed to set up the frequency band width and the signal amplification of the pyroelectric IR sensor. The case of low frequency region shows that the voltage response increases with the independence of the sensor area as the thickness decreases. In the high frequency region, it is found that the voltage response with the load resistor of 20$G{\Omega}$ increases with the independence of the sensor thickness as the sensor area decreases. In the low frequency region, the detectivity becomes excellent at th load resistor of 20$G{\Omega}$, the sensor area larger than $4{\times}10^{-10}m^2$ and the sensor thickness thinner than $1{\times}10^{-5}m$, while, in the high frequency region, it shows high value at the sensor thickness thinner than $1{\times}10^{-5}m$ and the sensor area smaller than $2{\times}10^{-10}m^2$ with the independence of the load resistor. In the circuit design, quasi-boot-strap circuit is employed, in which a single op-amp is connected to the drain of JFFT. Desirable frequency band width, amplification rate and the remarkable drop of noise of about 56% from that of conventional circuits with double op-amps are obtained.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.13 no.3
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• pp.239-254
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• 1988

In this paper an exciter which performs modulation and amplification is composed of high power(30dBm) VCO(Voltage Controlled Oscillator) using push-pull circuit. Modulation is FSK using PLL(Phase Locked Loop). A single loop PLL synthesizer having sequency range of 42.5-100.5MHz, 25KHz channel spacing and switching time of 1msec converts down the exciter VCO frequency to 1.25MHz. This signal mixed with the FSK modulated signal coming in the phase detector of exciter. The acquisition time of exciter for frequency hoppng is less than 200usec, so the total acquisition time for transmission is less that 1.5msec. There is no need of additional power amplification because power amlifiction by high power VCO is high enough to communicate within near distance. The proposed frequency synthesizer is not complex so it is suitable for low cost slow frequency hopping spread spectrum communication.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.53 no.8
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• pp.477-487
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• 2004

Helical magneto-cumulative generators(MCGs) are devices which convert explosive energy into electromagnetic energy. The electromagnetic energy supplied from an external circuit is amplified by an explosively driven metal conductor mounted at the center of a helical coil compressing magnetic flux between the conductor and the coil. To optimize the coil design, output properties of small-size helical MCGs were measured while varying design parameters; the number of coil sections, length of the sections, pitch in the sections, and type of copper wire. Dimensions of the coil were kept constant, 50 mm in diameter and 200 mm in length. The coil was fabricated by using enamel-coated copper wire of 1 mm in diameter. The highest energy amplification ratio and figure of merit were 52.5 and 0.81, respectively. from an helical MCG with initial inductance of 63.7 $\mu$H at initial energy of 0.152 kJ Based on the experimental and calculated results, empirical formulas capable of optimizing coil designs were derived. By using these formulas, pitch in each coil section can be obtained at an arbitrary inductive load for high energy amplification ratio and figure of merit.

• Journal of Power Electronics
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• v.15 no.6
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• pp.1673-1681
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• 2015

A low dropout (LDO) regulator with a wide-bandwidth is proposed in this paper. The regulator features a Human Body Model (HBM) 8kV-class high robustness ElectroStatic Discharge (ESD) protection circuit, and two error amplifiers (one with low gain and wide bandwidth, and the other with high gain and narrow bandwidth). The dual error amplifiers are located within the feedback loop of the LDO regulator, and they selectively amplify the signal according to its ripples. The proposed LDO regulator is more efficient in its regulation process because of its selective amplification according to frequency and bandwidth. Furthermore, the proposed regulator has the same gain as a conventional LDO at 62 dB with a 130 kHz-wide bandwidth, which is approximately 3.5 times that of a conventional LDO. The proposed device presents a fast response with improved load and line regulation characteristics. In addition, to prevent an increase in the area of the circuit, a body-driven fabrication technique was used for the error amplifier and the pass transistor. The proposed LDO regulator has an input voltage range of 2.5 V to 4.5 V, and it provides a load current of 100 mA in an output voltage range of 1.2 V to 4.1 V. In addition, to prevent damage in the Integrated Circuit (IC) as a result of static electricity, the reliability of IC was improved by embedding a self-produced 8 kV-class (Chip level) ESD protection circuit of a P-substrate-Triggered Silicon Controlled Rectifier (PTSCR) type with high robustness characteristics.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.11 no.6
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• pp.96-103
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• 1997

This paper deals with the malfunction characteristics of the earth leakage circuit breakers(ELBs) applied by a lightning impulse voltage. In the cases of the regulation of KS C 4613 and the simulated circuits with surge protection devices, the dead operation characteristics of the ELBs against lightning impulse voltages were experimentally investigated and discussed. As a result, all the specimens(ELBs) used in this work have a cutoff performance of the lightning impulse voltage when the differential mode surges were injected at the input terminals of the ELBs owing to a surge absorber installed at the power source side of amplification circuit. Four kinds of the specimens have brought about malfunction in the condition of the lightning impulse dead operation test defined in KS C 4613, and the malfunction voltages are relatively high and are about 5-6.5[kV]. In the case of the simulated test circuit with surge protection devicesthree kinds of the ELBs have led to malfunction. Also the voltage level causing the malfunction of the ELBs is decreased by operation of surge protection devices, and it ranges from 3 to 5(kV).

• Bulletin of the Korean Chemical Society
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• v.33 no.9
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• pp.3043-3047
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• 2012

To investigate the scattering layer effect of a $TiO_2$ multilayer in dye-sensitized solar cells (DSSCs), we designed a new DSSC system, assembled with a CdS-$TiO_2$ scattering layer electrode. A high-magnification SEM image exhibited hollyhock-like particles with a width of 1.5-2.0 ${\mu}m$ that were aggregated into 10-nm clumps in a hexagonal petal shape. The efficiency was higher in the DSSC assembled with a CdS-$TiO_2$ scattering layer than in the DSSC assembled with $TiO_2$-only layers, due to the decreased resistance in electrochemical impedance spectroscopy (EIS). The short-circuit current density ($J_{sc}$) was increased by approximately 7.26% and the open-circuit voltage ($V_{oc}$) by 2.44% over the 1.0 wt % CdS-$TiO_2$ composite scattering layer and the incident photon-to-current conversion efficiency (IPCE) in the maximum peak was also enhanced by about 5.0%, compared to the DSSC assembled without the CdS-$TiO_2$scattering layer.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.9
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• pp.1308-1316
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• 1989

A simplified 10-element GaAs MESFET equivalent circuit model has been presented which is suitable for the design of ultrabroad-band microwave small-signal amplification, the these circuit element values are extracted from measured S-parameters using complex-curve fitting algorithm. Packaged GaAs MESFET equivalent circuits are composed of intrinsic \ulcornermodel and several extrinsic elements at microwave frequencies, of which the largest effects are caused by package lead inductances. If these are eliminated from measured S-parameters, newly obtained S-parameters are closed to intrinsic \ulcornermodel, and the rest element values can be easily extracted. The modeling results applied to the packaged GaAs MESFET NE71083 are almost equal between the measure S-parameters and the mideled S-parameters within b 2% errors from DC to 8GHz, and errors are increased to \ulcorner% upto 12GHz wide bandwidth.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.3 s.118
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• pp.315-322
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• 2007

In this paper, active integrated antenna with left hand circular polarization(LHCP) for a transmitter of UHF RFID reader has been described. A novel rectangular ring patch as a radiator of the active antenna is proposed for easier impedance matching, smaller patch size, and LHCP characteristics. An amplification circuit is placed in the opening area of the radiator and is combined with it to work as oscillating circuit around 915 MHz. From the test results, impedance bandwidth of 29 MHz, 3 dB axial ratio bandwidth of 20 MHz, 3 dB beamwidth of 85 degree, and effective radiation power of 8.8 dBm have been obtained.