• Title/Summary/Keyword: Amorphous carbon

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Growth and Characterization of a-Si :H and a-SiC:H Thin Films Grown by RF-PECVD

  • Kim, Y.T.;Suh, S.J.;Yoon, D.H.;Park, M.G.;Choi, W.S.;Kim, M.C.;Boo, J.-H.;Hong, B.;Jang, G.E.;Oh, M.H.
    • 한국표면공학회지
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    • 제34권5호
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    • pp.503-509
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    • 2001
  • Thin films of hydrogenated amorphous silicon (a-Si : H) and hydrogenated amorphous silicon carbide (a-SiC:H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (RF-PECVD). In the present work, we have investigated the effects of the RF power on the properties, such as optical band gap, transmittance and crystallinity. The Raman data show that the a-Si:H material consists of an amorphous and crystalline phase for the co-presence of two peaks centered at 480 and $520 cm^{-1}$ . The UV-VIS data suggested that the optical energy band gap ($E_{g}$ ) is not changed effectively with RF power and the obtained $E_{g}$(1.80eV) of the $\mu$c-Si:H thin film has almost the same value of a-Si:H thin film (1.75eV), indicating that the crystallity of hydrogenated amorphous silicon thin film can mainly not affected to their optical properties. However, the experimental results have shown that$ E_{g}$ of the a-SiC:H thin films changed little on the annealing temperature while $E_{g}$ increased with the RF power. The Raman spectrum of the a-SiC:H thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs.

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탄소물질을 이용한 전자부품의 열 방출효과 (Thermal Emission Effect of Electronic Parts Using Carbon Materials)

  • 엄운용;노재승;안재상;강동수;서승국;김석환
    • 한국재료학회지
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    • 제20권4호
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    • pp.204-209
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    • 2010
  • Recent high efficiency electronic devices have been found to have heat emission problems. As for LEDs, an excessive increase in the device temperature causes a drop of the luminous efficiency and circuit lifetime. Therefore, heat release in the limited space of such electronic parts is very important. This is a study of the possibility of using a coating of carbon materials as a solution for the thermal emission problem of electronic devices. Powdered carbon materials, cokes, carbon blacks, amorphous graphite, and natural flakes were coated with an organic binder on an aluminum sheet and the subsequent thermal emissivity was measured with an FT-IR spectrometer and was found to be in the range of $5{\sim}20\;{\mu}m$ at $50^{\circ}C$. The emissivity of the carbon materials coated on the aluminum sheet was shown to be over 0.8 and varied according to carbon type. The maximum thermal emissivity on the carbon black coated-aluminum surface was shown to be 0.877. The emissivity of the anodized aluminum sheets that were used as heat releasing materials of the electronic parts was reported to be in the range of 0.7~0.8. Therefore, the use of a coating of carbon material can be a potential solution that facillitates heat dissipation for electronic parts.

Nitrogen Incorporation of Nanostructured Amorphous Carbon Thin Films by Aerosol-Assisted Chemical Vapor Deposition

  • Fadzilah, A.N.;Dayana, K.;Rusop, M.
    • Transactions on Electrical and Electronic Materials
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    • 제14권4호
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    • pp.165-171
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    • 2013
  • Nanostructured pure a-C and nitrogen doped a-C: N thin films with small particle size of, ~50 nm were obtained by Aerosol-assisted CVD method from the natural precursor camphor oil. Five samples were prepared for the a-C and a-C: N respectively, with the deposition temperatures ranging from $400^{\circ}C$ to $600^{\circ}C$. At high temperature, the AFM clarifies an even smoother image, due to the increase of the energetic carbon ion bombardment at the surface of the thin film. An ohmic contact was acquired from the current-voltage solar simulator characterization. The higher conductivity of a-C: N, of ${\sim}{\times}10^{-2}Scm^{-1}$ is due to the decrease in defects since the spin density gap decrease with the nitrogen addition. Pure a-C exhibit absorption coefficient, ${\alpha}$ of $10^4cm^{-1}$, whereas for a-C:N, ${\alpha}$ is of $10^5cm^{-1}$. The high ${\sigma}$ value of a-C:N is due to the presence of more graphitic component ($sp^2$ carbon bonding) in the carbon films.

질산에 의한 중.저탄소페로망간제조분진에 함유된 망간의 침출 (The Extraction of Manganese from the Medium-Low Carbon Ferromanganese Dust with Nitric Acid)

  • 이계승;한기천;송영준;신강호;조동성
    • 자원리싸이클링
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    • 제9권1호
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    • pp.21-26
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    • 2000
  • 고탄소페로망간을 중.저탄소페로망간으로 제조하는 AOD공정의 Bag filter에 포집된 분진은 약 90%가 $Mn_3O_4$인 망간산화물이다. 분진의 입도는 5$\mu\textrm{m}$이하이고, 입자들은 직경이 10nm정도인 미립자들의 응집체로서 구형이다. 분진에서 망간을 질산으로 침출할 때의 최대침출율은 약 67%이며,비정질의 $MnO_2$가 잔류한다. 침출속도는 온도가 증가함에 따라 빨라지고 고농도의 질산에서는 늦어졌다. 침출속도를 여러 침출모델에 적용한 결과는 pore diffusion model에 일치하였다.

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Vertically aligned carbon nanotubes grown on various substrates by plasma enhanced chemical vapor deposition

  • Han, Jae-hee;Moon, Byung-Sik;Yang, Won-Suk;Yoo, Ji-Beom;Park, Chong-Yun;Han, In-Taek;Lee, Nae-Sung;Kim, Chong-Min;Kim, Tae-Il
    • Journal of Korean Vacuum Science & Technology
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    • 제3권2호
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    • pp.121-125
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    • 1999
  • Vertically well aligned multiwall carbon nanotubes were grown on nickel coated different substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 650$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. The surface roughness of nickel layer increased as NH3 etching time increased. The diameters of the nanotubes decreased and the density of nanotubes increased as NH3 etching time increased. diameter of nanotube was 30 to 70 nm. Nickel cap was observed on the top of the grown nanotube and very thin carbon amorphous layer was fonde on the nickel cap.

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Synthesis and field emission of double-walled carbon nanotubes

  • Lee, S.H.;Jung, S.I.;Lee, T.J.;Kim, W.S.;Cho, J.H.;Kang, H.J.;Kwon, G.M.;Park, C.J.;Seo, S.H.;Jeon, K.Y.;Ha, B.;Lee, C.J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1087-1090
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    • 2005
  • We have investigated the synthesis and field emission properties of high-quality double-walled carbon nanotubes (DWCNTs) using a catalytic chemical vapor deposition method and a hydrogen arc discharge method. The produced carbon materials using a catalytic CVD method indicated high-purity DWCNT bundles free of amorphous carbon covering on the surface. By adopting a hydrogen arc discharge method, we could obtained high-purity DWCNTs in large-scale. DWCNTs showed low turn-on voltage and higher emission stability compared with SWCNTs.

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The Characteristics of Plasma Polymerized Carbon Hardmask Film Prepared by Plasma Deposition Systems with the Variation of Temperature

  • Yang, J.;Ban, W.;Kim, S.;Kim, J.;Park, K.;Hur, G.;Jung, D.;Lee, J.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.381.1-381.1
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    • 2014
  • In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).

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Growth of Nanocrystalline Graphite on Sapphire by Solid Carbon Source Molecular Beam Epitaxy

  • Jerng, S.K.;Yu, D.S.;Kim, Y.S.;Ryou, Jung-A;Hong, Suk-Lyun;Kim, C.;Yoon, S.;Efetov, D.K.;Kim, P.;Chun, S.H.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.51-51
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    • 2011
  • We have grown nanocrystalline graphite on sapphire substrate by using solid carbon source molecular beam epitaxy. Changes of structure from amorphous carbon to nanocrystalline graphite controlled by the growth temperature have been investigated by Raman spectroscopy. Raman spectra show D, G, and 2D peaks, whose intensities vary on the growth temperature. Atomic force microscopy reveals that the surface is very flat. Sapphire substrates of different cutting direction produce similar results. Simulations suggest that the interaction between carbon and oxygen causes disorders. Electrical transport measurements exhibit a Dirac-like peak, including a carrier type change by an external gate voltage bias.

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액중 전기선 폭발법을 이용한 비정질 탄소가 코팅된 주석 나노분말의 제조 및 전기화학적 특성 (Fabrication of Carbon-coated Tin Nano-powders by Electrical Wire Explosion in Liquid Media and its Electrochemical Properties)

  • 김유영;송주석;조권구
    • 한국분말재료학회지
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    • 제23권4호
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    • pp.317-324
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    • 2016
  • Tin is one of the most promising anode materials for next-generation lithium-ion batteries with a high energy density. However, the commercialization of tin-based anodes is still hindered due to the large volume change (over 260%) upon lithiation/delithiation cycling. To solve the problem, many efforts have been focused on enhancing structural stability of tin particles in electrodes. In this work, we synthesize tin nano-powders with an amorphous carbon layer on the surface and surroundings of the powder by electrical wire explosion in alcohol-based liquid media at room temperature. The morphology and microstructures of the powders are characterized by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and transmission electron microscopy. The electrochemical properties of the powder for use as an anode material for lithium-ion battery are evaluated by cyclic voltammetry and a galvanometric discharge-charge method. It is shown that the carbon-coated tin nano-powders prepared in hexanol media exhibit a high initial charge specific capacity of 902 mAh/g and a high capacity retention of 89% after 50 cycles.

Ar 플라즈마 상태에서의 탄소 입자 운동 모델링 (The Motion of Carbon Plume in Ar Plasmas)

  • 소순열;정해덕;이진;박계춘;김창선;문채주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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    • pp.15-19
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    • 2006
  • A pulsed laser ablation deposition (PLAD) technique is an excellent method for the fabrication of amorphous carbon (a-C) films, because it can generate highly energetic carbon clusters on a substrate. This paper was focused on the understanding and analysis of the motion of C particles in laser ablation assisted by Ar plasmas. The simulation has carried out under the pressure P=50 mTorr of Ar plasmas. Two-dimensional hybrid model consisting of fluid and Monte-Carlo models was developed and three kinds of the ablated particles which are carbon atom (C), ion ($C^+$) and electron were considered in the calculation of particle method. The motions of energetic $C^+$ and C deposited upon the substrate were investigated and compared. The interactions between the ablated particles and Ar gas plasmas were discussed.

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