• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.87-90
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• 1999

The dependence of diffraction efficiency as a funct~on of film thickness and incident angle has been investigated in amorphous chalcogenide thin films, which act as a polarization holographic materials. Especially a-(Se, S) based films exhibit a number of photoinduced phenomena not observed in other types of amorphous thin films. Holographic gratings in amorphous As-Ge-Se-S thin films have been formed using the mutual perpendicular polarized(linearly) He-Ne laser light. We could obtain the optimum condition to get high diffraction efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.484-487
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• 2001

Amorphous carbon thin films were deposited using laser ablation technique on Si(100) substrates at different temperatures. In this study, effects of the substrate temperature on the properties of amorphous carbon films were systematically investigated. The surface morphologic and structural properties of the films were studied by scanning electron microscopy (SEM) and raman spectroscope, respectively. With increasing of the substrate temperature, the surface morphologies were changed singnificantly. Moreover the intensity ratio of D-band and G-band and the full width at half maximum of these bands were dependent on substrate temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.125-126
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• 2007

Polycrystalline silicon thin-film-transistors (Poly-Si TFT's) with a amorphous-$Si_xGe_y$ seed layer have been fabricated to improve the performance of TFT. The dependence of crystal structure and electrical characteristics on the the Ge fractions in $Si_xGe_y$ seed layer were investigated. As a result, the increase of grain size and enhancement of electrical characteristics were obtained from the poly-Si TFT's with amorphous-SixGey seed layer.

• Laser Solutions
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• v.2 no.1
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• pp.43-50
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• 1999

For the conventional welding method. the high heat transfer makes the crystallized zone of the work material unavoidable. Whereas the laser is able to weld the amorphous metal without a crystallized zone, because heat transfer is limited within a very small restricted volume. In this paper, the possibilities and the limits of the laser welding were studied to utilize the advantageous properties of amorphous metal foils.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.849-852
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• 2002

Recently, amorphous selenium is used as x-ray conversion material for flat-panel x-ray detector. In this paper, we investigated the effect of breakdown under high voltage and leakage current in PN-type multi-layer structure based on p-type a-Se and n-type conductive thin film. Experimental results show that the multi-layer based detector reduced leakage current because n-type CeO2 conductive layer prevent from hole injection into a-Se layer from collection electrode, Also, the breakdown voltage was improved by dielectric layer between a-Se and top electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.99-101
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• 1996

This paper is concerned with the fabrication of (Fe,Co)-Si-B amorphous magneto-strictive wire which attracts strong attention as a new sensor material. First, we put the ingot of (Fe$\sub$1-x/Co$\sub$x/)$\sub$77/Si$\sub$8/B$\sub$15/ composition into quartz tube. Then, under the condition of 400MHz and 8kW, we melt and mix the in-got in the high frequency induction furnance. After that, we obtain the magnetostrictive wire of 100∼150$\mu\textrm{m}$ in diameter by injection and rapid quenching within the high rotating water. Finally, we find that the wire is under the amorphous state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.190-191
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• 1994

In this paper, We study on the fabrication of amorphous this film of zeromagnetostriction material and the magnetic properties. This films are fabricated by using sputtering method with input power of 400∼607[W], Ar gas pressure of 3∼ 9[mTorr] and target composition of Fe$\sub$4.7/ Co$\sub$74.3/Si$_2$B$\sub$19/. Sample this films with diameter of 14[mm ] and thickness of 27-30[$\mu\textrm{m}$] were obtained through experiments. When we analyzed the magnetic properties before and after annealing with sample thin films, we confirmed that magnetic domain wall amorphous thin films consisted for Neel magnetic domain wall with the width of about 1[$\mu\textrm{m}$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.89-92
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• 1996

In this paper, we mention the study on the sensing function of amorphous magneto- striction wire with about 125${\mu}{\textrm}{m}$$\Phi$ in diameter. The wire in fabricated by using injection and quenching method under the high speed rotating water flow. The wire\`s compotion is (Fe$_{75}$ $Co_{25}$)$_{77}$Si$_{8}$B$_{15}$ , and generates sharp Matteucci voltage by large Barkhausen jump effect even the weak magnetic field. In this study, we don\`t use pick-up coil. Instead, we apply external magnetic field of 3.6Oe in the direction orthogonal to the wire. Then, we detect Matteucci voltage of 1.lmV to both side of 20cm amorphous-wire. Thus, we find that the fabricated wire has the function necessary as the high sensitive sensor material.l.al.l.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.120-122
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• 1994

We examined the magnetic properties as a function of annealing temperature of the as-quenched $Fe_{87}Zr_{7}B_{5}Ag_{1}$ amorphous alloy. The values of $H_{c}$=30m0e, $B_{a}$=0.44T and ${\mu}$i=146000 at $300^{\circ}C$ annealing treatment are obtained. The excel lent soft magnetic properties seem to result from the annihilation of quenching-Induced internal stress by the heat treatment and the change of microstructure due to the different relaxation behavior owing to adding insoluble element such as Ag. Therefore, the $Fe_{87}Zr_{7}B_{5}Ag_{1}$ amorphous alloy is quite promising for practical use as a core material in various transformers of high transformers of high frequency.