• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.193-198
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• 2007

The NiSi is very promising candidate for the metallization in 60nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process window temperature for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5{\Omega}/{\square}$ and $3{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• Particle and aerosol research
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• v.9 no.3
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• pp.187-197
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• 2013

To understand the characteristics of organic aerosol(OA) at the background atmosphere of Korea, an observation of atmospheric PM10 was conducted at a Global Atmospheric Watch(GAW) station operated by the Korean Meteorological Administration at Anmyon Island during 2010. Various organic compounds were analyzed from 26 samples by using a gas chromatography-mass spectrometer. Water soluble organic carbon(WSOC) was also analyzed by using a total organic carbon(TOC) analyzer. Among 6 classes with 68 target compounds detected, the classes of n-alkanoic and alkenoic acids ($326.67{\pm}75.40ngm^{-3}$) and dicarboxylic acids ($323.74{\pm}361.89ngm^{-3}$) were found to be major compound classes in the atmosphere of Anmyon Island. Compared to the previous results reported for 2005 spring samples at Gosan site, the concentrations of organic compounds at Anmyon Island were 3-10 times higher than Gosan site due to the difference of location and sampling period. The concentrations of organic compounds were varied with the atmospheric conditions. Significant increase of the concentrations of dicarboxylic and carboxylic acids in the smog episode indicated that secondary oxidation of organic compounds was major factor to increase OA concentration during smog episode in the Anmyon Island. It was found that the compositions of the OA measured at Anmyon Island were dependent on the air parcel trajectories.

• Journal of the Korean Society of Food Science and Nutrition
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• v.28 no.6
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• pp.1304-1309
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• 1999

The respiratory characteristics and quality attributes of mature green mume fruits as influenced by modified atmosphere packaging(MAP) conditions during storage at 25oC for 8 days were investigated. The quality attributes of mume fruits were evaluated in terms of fresh weight loss, physiological injury and yellowing. The packaging materials used for MAP were low density polyethylene(LDPE) films with various different thicknesses. Yellowing and fresh weight loss of mume fruits were noticeably reduced by the packaging treatments with LDPE A and B. The physiological injury of the fruits during storage was found to be more severe in LDPE C than others. For LDPE A and B, the oxygen and carbon dioxide contents within the packages of Mume fruits maintained at the levels of 2~3% and 7~8%, respectively. With respect to visual quality, MAP prolonged the shelf life of the fruits much longer compared with the unsealed control. From the experimental results, it is suggested that the LDPE films with the gas trans mission rates of about 2,100 O2 ml/m2.day.atm and 6,700 CO2 ml/m2.day.atm would be proper for MAP of mature green mume fruits during storage at ambient temperature.

• Journal of Hydrogen and New Energy
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• v.26 no.2
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• pp.105-113
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• 2015

In order to accelerate hydrogen society in current big renewable energy trend, it is very important that hydrogen can be transported and stored as a fuel in efficient and economical fashion. In this perspective, liquid hydrogen can be considered as one of the most prospective storage methods that can bring early arrival of the hydrogen society by its high gravimetric energy density. In this study, a small-scale hydrogen liquefier has been designed and developed to demonstrate direct hydrogen liquefaction technology. Gifford-McMahon (GM) cryocooler was employed to cool warm hydrogen gas to normal boiling point of hydrogen at 20K. Various cryogenic insulation technologies such as double walled vacuum vessels and multi-layer insulation were used to minimize heat leak from ambient. A liquid nitrogen assisted precooler, two ortho-para hydrogen catalytic converters, and highly efficient heat pipe were adapted to achieve the target liquefaction rate of 1L/hr. The liquefier has successfully demonstrated more than 1L/hr of hydrogen liquefaction. The system also has demonstrated its versatile usage as a very efficient 150L liquid hydrogen storage tank.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.39-43
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• 1993

Electricial characteristics of gate dielectrics prepared by reoxidation of thermal $SiO_2$ in nitrous oxide gas have been investigated. 10 and 19nm-thick oxides were reoxidized at temperatures of $900-1000^{\circ}C$ for 10-60 min in $N_2O$ ambient. As reoxidation proceeds, it is shown that nitrogen concentration at $Si/SiO_2$ interface increases gradually through the AES analysis. Nitrogen pile-up at $Si/SiO_2$ interface acts as a oxidant diffusion barrier that reduces the oxidation rate significantly. And it not only strengthen oxynitride structure at the interface but improve the gate dielectric qualities. Reliabilities of oxynitride films are conformed by the breakdown distributions and constant current stress technique. Therefore, the oxynitride films made by this process show a good promise for future ULSI applications.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.48-56
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• 1989

Contact-type linear image sensors for facsimile have been fabricated by means of rf glow discharge decomposition method of silane. The dependence of their electrical and optical properties on rf power, $SiH_4$ flow rate, ambient gas pressure, $H_2SiH_4$ ratio and substrate temperature are described. The a-Si:H monolayer demonstriated photosensitivity of 0.85 and $I_{ph}/I_d$ ratio of 100 unger 100 lux illumination. However, this monolayer has relatively high dark current due to carrier injection from both electrodes, resulting in low $I_{ph}/I_{dd}$ ratio. To suppress the dark current we have fabricated $SiO_2/i-a-Si:H/p-a-Si:H:B$ multilayer film with blocking structure. The photocurrent of this multilayer sensor with 6 V bias became saturated ar about 20nA under 10 lux illumination, while the dark current was less than 0.2 nA. Moreover, the spectral sensitivity of the multilayer film was enhanced for short wavelength visible region, compared with that of the a-Si:H monolayer. These results show that the fabricated photocon-ductive film can be used as the linear image sensor of the facsimile.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.1
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• pp.1-7
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• 2016

A Urea-SCR(Selective Catalytic Reactor) system, which converts nitrogen oxides into nitrogen and water in the presence of a reducing agent, creates a major exhaust gas aftertreatment system for NOx reduction among other compounds. With regard to vehicle applications, a urea solution was chosen based on its eutectic composition of a 32.5wt% urea-water solution. An important advantage of this eutectic composition is that its melting point of $-11.7^{\circ}C$ is sufficiently low to avoid solidification in cold environments. However, the storage tanks must be heated separately in case of low ambient temperature levels to ensure a sufficient amount of liquid is available during scheduled start ups. In this study, therefore, a numerical investigation of three-dimensional unsteady heating problems analyzed to understand the melting processes and heat transfer characteristics including liquid volume fraction, temperature distributions, and temperature profiles. The investigations were performed using Fluent 6.3 commercial software that modeled coolant and electric heater models based on a urea solution. It is shown that the melting performance with the electric heater is higher than a coolant heater and is more efficient.

• Applied Chemistry for Engineering
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• v.20 no.1
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• pp.99-103
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• 2009

HBr and $O_2$ in $Cl_2$ gas ambient for the high density plasma gate etching has been used to increase the performance of gate electrode in semiconductor devices. When an un-doped amorphous silicon layer was used for a gate electrode material, the notching profile was observed at the outer sidewall foot of the outermost line. This phenomenon can be explained by the electron shading effect: i.e., electrons are captured at the photoresist sidewall while ions pass through the photoresist sidewall and reach the oxide surface at a narrowly spaced pattern during the over etch step. The potential distribution between gate lines deflects the ions trajectory toward the gate sidewall. In this study, an appropriate mechanism was proposed to explain the occurrence of notching in the gate electrode of un-doped amorphous silicon.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.42 no.12
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• pp.1051-1056
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• 2014

A Fuel Feeding Unit of electric propulsion system has been developed for the small-satellite applications. The fuel feeding unit stores the xenon gas with high pressure and density as a fuel. Xenon can affect to system stability since xenon has the transient condition under the critical point which is in ambient temperature on the launch environment. The functional and structural stability on the launch environment needs verification through the ground tests. The design points and verification tests of the system were discussed and test results were described on this text. The system stability on the launch environment was verified through these verification tests.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.197-200
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• 2001

In this letter, we report on the investigation of Ni/Si/Ni Ohmic contacts to n-type 4H-SiC. Ohmic contacts have been formed by a vacuum annealing and $N_2$ gas ambient annealing method at $950^{\circ}C$ for 10 min. The specific contact resistivity ( $\rho_{c}$ ), sheet resistance($R_s$), contact resistance($R_c$), transfer length($L_T$) were calculated from resistance($R_T$) versus contact spacing(d) measurements obtained from 10 TLM(transmission line method) structures. The resulting average values of vacuum annealing sample were $\rho_{c}=3.8{\times}10^{-5}\Omega cm^{3}$, $R_{c}=4.9{\Omega}$, $R_{T}=9.8{\Omega}$ and $L_{T}=15.5{\mu}m$, resulting average values of another sample were $\rho_{c}=2.29{\times}10^{-4}\Omega cm^{3}$, $R_{c}=12.9{\Omega}$ and $R_{T}=25.8{\Omega}$. The physical properties of contacts were examined using X-Ray Diffraction and Auger analysis, there was a uniform intermixing of the Si and Ni, migration of Ni into the SiC.