• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.29-33
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• 2012

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited under hydrogen atmosphere on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under hydrogen ambient gases (Ar, $Ar+H^2$) at room temperature. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $H^2$ under $Ar+H^2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show good current density-voltage-luminance characteristics. This suggests that flat surface roughness and low electrical resistivity of a-IZO anode film lead to more efficient anode material in OLED devices.

• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.61-64
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• 2011

In order to grow the crystalline solar cells industry continuously, development of alternate low-cost manufacturing processes is required. Plasma doping system is the technique for introducing dopants into semiconductor wafers in CMOS devices. In photovoltaics, plasma doping system could be an interesting alternative to thermal furnace diffusion processes. In this paper, plasma doping system was applied for phosphorus doping in crystalline solar cells. The Plasma doping was carried out in 1~4 KV bias voltages for four minutes. For removing surface damage and formation of pn junction, annealing steps were carried out in the range of $800{\sim}900^{\circ}C$ with $O_2$ ambient using thermal furnace. The junction depth in about $0.35{\sim}0.6{\mu}m$ range have been achieved and the doping profiles were very similar to emitter by thermal diffusion. So, It could be confirmed that plasma doping technique can be used for emitter formation in crystalline solar cells.

• Journal of the Semiconductor & Display Technology
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• v.6 no.1 s.18
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• pp.23-26
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• 2007

The effects of plasma treatment on the ITO/glass substrate before deposition of organic materials were investigated in the fabrication of green light emitting organic devices with $Alq_3-C545T$ fluorescent system. In our experiments, the optimum plasma treatment was obtained at the power and time of 150W and 2 minutes under the $Ar(50%)/O_2$ ambient of 1 mTorr. The green OLED with plasma treatment at 150W for 2 minutes showed the luminance and efficiency of $4700\;cd/m^2$ and 8 lm/W at 10V, respectively. On the contrary, the same structured device without plasma treatment showed much lower performance with the luminance of $2600\;cd/m^2$ and the efficiency of 3.6 lm/W at 10 V.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.614-615
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• 2009

For the high reflectance under the ambient light condition, a highly efficient diffractive reflector has been proposed, based on a micro grating structure.[1] This reflector was designed to show highly concentrated distribution of the reflected light to the normal direction of the reflector under specific incident conditions of the light. In order to apply a diffractive reflector to a reflective liquid crystal display, the coupling between the viewing angle characteristics of a liquid crystal (LC) cell and the reflective distribution of the reflector should be considered. Under the optimum configuration confirmed through the analysis of the coupling between a LC cell and a reflector, a reflective vertical alignment (VA) cell with a diffractive reflector shows contrast ratio and brightness much higher than that with a conventional bumpy reflector.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.7-11
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• 2019

We have investigated the effect of the hydrogen flow rate on the characteristics of IZO thin films for the TCO (transparent conducting oxide). For this purpose, IZO thin films are deposited by RF magnetron sputtering at 300℃ with various H₂ flow rate. To investigate the influences of the ambient gases, the flow rate of hydrogen in argon was varied from 0.1 sccm to 1 sccm. The IZO thin films deposited at 300℃ show crystalline structure having an (222) preferential orientation. The electrical resistivity of the crystalline-IZO films deposited at 300℃ and hydrogen gas of 0.8sccm was 3.192×10^-4Ω cm, the lowest value. As the hydrogen gas flow rate increased, the resistivity tended to decrease. The XPS profiles showed that the number of oxygen vacancy decreased as the hydrogen flow rate increased. The transmittance of the IZO films deposited at 300℃ were showed more than 80%.

• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.20-24
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• 2015

This study was explained the correlation between the O 1s spectra and the crystallization of ITO thin films. The crystal structure of ITO thin films changed with various annealing temperatures and annealing methods such as atmosphere or vaccum conditions. The amorphous structure observed from XRD pattern showed the O 1s spectra with 531.2 eV, and the crystal structure of annealed ITO films analyzed by XRD pattern had the O 1s spectra of 529.8 eV as lower binding energy then the 531.2 eV. Oxygen in view of ITO films was related to the crystallization, and the ITO films annealed in an atmosphere pressure showed higher crystal structure than the ITO annealed in a vaccum. It was indicated that the amorphous structure had higher binding energy than the crystal structure analyzed by O 1s spectra of ITO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.491-492
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• 2006

We report on the fabrication of organic-based flexible display using an amorphous IZO anode grown at room temperature. The IZO anode films were grown by a conventional DC reactive sputtering on polycarbonate (PC) substrate at room temperature using a synthesized IZO target in a Ar/$O_2$ ambient. X-ray diffraction examination results show that the IZO anode film grown at room temperature is complete amorphous structure due to low substrate temperature. It is shown that the $Ir(ppy)_3$ doped flexible organic light emitting diode (OLED) fabricated on the IZO anode exhibit comparable current-voltage-luminance characteristics to OLED fabricated on conventional ITO/glass substrate. These findings indicate that the IZO anode film grown on PC substrate is a promising anode materials for the fabrication of organic based flexible displays.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.12-16
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• 2022

We have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various H₂ flow rate. Experiments were carried out while varying the hydrogen gas flow rate from 0sccm to 1.0sccm in order to see how the hydrogen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 0.379×10^-5 Ωcm when the IGZO film was deposited at 300℃ and set up at 1.0sccm. As the oxygen vacancy rate increased, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.96-100
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• 2023

We have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various O₂ flow rate. Experiments were carried out while varying the oxygen gas flow rate from 0sccm to 1.0sccm to see how the oxygen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 2125x10^-3 Ωcm when the IGZO film was deposited at RT and set up at 0.1sccm. As the oxygen vacancy rate decreased, the resistivity intended to increase. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.

• 한국HCI학회:학술대회논문집
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• 2009.02a
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• pp.1069-1074
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• 2009

Public displays are evolving from a one-way display to an interactive medium which contains dynamic transition of various media. This study focuses on the interaction between human and digital technology-based art on public display from a HCI point of view, while several viewpoints exist on interactive public displays. We present a new interaction model which suggests different interactions depending on the viewer's distance and direction so that public display could offer rich media experiences. We have also and built an installation art to examine the efficacy of our interaction model. As such, we introduced two methodologies from HCI to derive our final interaction model. First of all, we analyze previous distance-dependent interaction models for public display in terms of context analytic approach, and propose an effective model for human-digital art interaction. Second, we introduce the concept of aura in HCI as user analytic approach to redefine interaction depending on the viewer's direction of attention. Thus, this study aims to suggest a new interaction model based on the previous two analyses to improve interaction between human and digital technology-based art on public display.