Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Annealing Effect with Various Ambient Conditions of ITO Thin Film

XPS와 XRD 분석을 이용한 ITO 박막의 결정성과 비정질 특성에 관한 연구

  • Ko, Jung Whan (Department of Semiconductor Engineering, Cheongju University) ;
  • Jung, Bo Young (Department of Semiconductor Engineering, Cheongju University) ;
  • Oh, Teresa (Department of Semiconductor Engineering, Cheongju University)
  • Received : 2015.10.19
  • Accepted : 2015.11.30
  • Published : 2015.12.31
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Abstract

This study was explained the correlation between the O 1s spectra and the crystallization of ITO thin films. The crystal structure of ITO thin films changed with various annealing temperatures and annealing methods such as atmosphere or vaccum conditions. The amorphous structure observed from XRD pattern showed the O 1s spectra with 531.2 eV, and the crystal structure of annealed ITO films analyzed by XRD pattern had the O 1s spectra of 529.8 eV as lower binding energy then the 531.2 eV. Oxygen in view of ITO films was related to the crystallization, and the ITO films annealed in an atmosphere pressure showed higher crystal structure than the ITO annealed in a vaccum. It was indicated that the amorphous structure had higher binding energy than the crystal structure analyzed by O 1s spectra of ITO films.

Keywords

References

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