• 한국재료학회지
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• 제24권5호
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• pp.266-270
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• 2014

Aluminum nitride(AlN) films were grown on the C-face and on the Si-face of (0001) silicon carbide(SiC) substrates using plasma-assisted molecular-beam epitaxy(PA-MBE). This study was focused on first-stage growth manipulation prior to the start of AlN growth. Al pre-exposure, N-plasma pre-exposure, and simultaneous exposure(Al and N-plasma) procedures were used in the investigation. In addition, substrate polarity and, first-stage growth manipulation strongly affected the growth and properties of the AlN films. Al pre-exposure on the C-face and on the Si-face of SiC substrates prior to initiation of the AlN growth resulted in the formation of hexagonal hillocks on the surface. However, crack formation was observed on the C-face of SiC substrates without Al pre-exposure. X-ray rocking-curve measurements revealed that the AlN epilayers grown on the Si-face of the SiC showed relatively lower tilt and twist mosaic than did the epilayers grown on the C-face of the SiC. The results from the investigations reported in this paper indicate that the growth conditions on the Si-face of the SiC without Al pre-exposure was highly preferred to obtain the overall high-quality AlN epilayers formed using PA-MBE.

• 한국기계가공학회지
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• 제20권10호
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• pp.19-26
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• 2021

In fine-particle injection processing, hard fine particles, such as silicon carbide or aluminum oxide, are injected - using high-pressure air, and a small amount of material is removed by applying an impact to the workpiece by spraying at high speeds. In this study, a two-axis stage device capable of sequence control was developed to spray various shapes, such as circles and squares, on the surface during the micro-particle jetting process to understand the surface-shape micro-particle-processing characteristics. In the experimental device, two stepper motors were used for the linear movement of the two degree-of-freedom mechanism. The signal output from the microcontroller is - converted into a signal with a current sufficient to drive the stepper motor. The stepper motor rotates precisely in synchronization with the pulse-signal input from the outside, eliminating the need for a separate rotation-angle sensor. The major factors of the processing conditions are fine particles (silicon carbide, aluminum oxide), injection pressure, nozzle diameter, feed rate, and number of injection cycles. They were identified using the ANOVA technique on the design of the experimental method. Based on this, the surface roughness of the spraying surface, surface depth of the spraying surface, and radius of the corner of the spraying surface were measured, and depending on the characteristics, the required spraying conditions were studied.

• 마이크로전자및패키징학회지
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• 제25권4호
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• pp.89-93
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• 2018

1200V 이상 급의 전기자동차의 파워 모듈에 적용되는 세라믹 기판은 구동 전력으로 고전력이 인가되는 특성상 고열전도도, 고 전기절연성, 저열팽창계수, 급격한 온도 변화에 대한 저항성의 특성이 요구된다. 방열기판에 적용되는 세라믹 중 질화알루미늄과 질화규소는 그 요구를 충족하는 소재로서 고려되고 있다. 이에 따라 본 논문에서는 질화알루미늄과 질화규소의 방열기판 소재로서의 특성을 상용해석프로그램을 통해 비교하였다. 그 결과 질화규소는 질화알루미늄에 대해 각각 동일한 조건의 열을 부여하는 공정을 시물레이션으로 구현했을 때 스트레스와 휨이 덜 발생하여 더 우세한 내충격성, 내stress성을 보였다. 열전도도 측면에서는 질화알루미늄이 방열 소재로서 더 우수한 특성을 지니지만 신뢰성 측면에서는 질화규소가 더 우세함을 시물레이션을 통해 관찰하였다.

• 대한기계학회논문집
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• 제19권1호
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• pp.122-131
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• 1995

The research trends for metal matrix composites have been on basic mechanical properties, fatigue behavior after aging and fractographic observations. In this study, the fatigue crack initiation as well as the fatigue crack growth behavior and the fracture mechanism were investigated through observations of the fracture surface on silicon carbide particles reinforced aluminum metal matrix composites(SiCp/Al). Based on the fractographic study done by scanning electron microscope and replica, crack growth path model and fracture mechanism are presented. The mechanical properties, such as the tensile strength, yield strength and elongation of SiCp/Al composites are improved in a longitudinal direction, however, the fatigue life is shorter than the basic Al6061 alloys. From fractographic observations, it is found that the failure mode is ductile in basic Ai6061 alloys. And because some SiC particles were pulled out from the matrix and a few SiC particles could be seen on the fracture surface of SiCp/Al, crack growth paths are believed to follow the interface of the matrix and its particles.

• The Korean Journal of Ceramics
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• 제2권1호
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• pp.39-42
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• 1996

${\alpha}-SiC$ powder with or without the addition of 0.1 wt% of large ${\alpha}-SiC$ partices(seeds) was pressureless-sintered at $1950^{\circ}C$ for 0.5, 2, and 4 h using $Y_3Al_5 O_{12}$ (yttrium aluminum garnet, YAG) as a sintering aid. The materials without seeds had an equiaxed grain struture. In contrast, the materials with seeds sintered for 2 and 4 h had a duplex microstructure with large elongated grains and amall equiaxed grains. Addition of large ${\alpha}-SiC$ seeds into ${\alpha}-SiC$ accelerated the grain growth of some ${\alpha}-SiC$ grains during sintering and resulted in the increased fracture toughness of the sintered materials. The fracture toughnesses of materials with or without seeds sintered for 4 h were 6.6 and $5.2 MPa \;m^{12}$, respectively.

• 한국정밀공학회지
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• 제30권12호
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• pp.1245-1251
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• 2013

This study has focused on development of ELID monitoring system and its application to ELID grinding of structural ceramics. ELID monitoring system was consisted of grinding equipment, ELID power supply, grinding wheel, electrode and monitoring program. It can give a real time data to check spindle grinding resistance, wheel revolution, dressing current and voltage in ELID grinding process. The performance of developed system was evaluated by applying to grinding of structural ceramics, silicon carbide and alumina. As the results of experiments, monitored data for spindle resistance and ELID dressing current was useful to check steady-state ELID grinding process. From the comparison of spindle resistance between ELID grinding and conventional grinding process according to change of depth of cut, it could be confirmed that the spindle resistance in ELID grinding was lower than conventional grinding process.

• 한국통신학회논문지
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• 제18권8호
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• pp.1169-1175
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• 1993

레이다의 추적 및 탐색으로 부터 비행 물체를 보호하기 위한 목적으로, 알루미늄 합금표면에 페라이트-탄화규소 복합물인 마이크로파 흡수층을 플라즈마 용사방식으로 제작하였다. 본 논문에서는 페라이트-탄화규소층(I) 제조시 사용했던 탄화규소 입자의 평균크기인 34[rm]대신에15[rm]가 사용되었으며, 플라즈마 용사변수들 중에서 분말의 공급비율은 70[Kg/h]대신에 50[Kg/h] 그리고, 용사거리는 80[mm[ 대신에 100[mm]가 사용 되었다. X-band(8~12.4(GHz)레이다용 페라이트-탄화규소 전자파 흡수체를 실험적으로 설계하고 시험제작하여 전기적 특성을 평가한 결과, -lOdB의 반사량을 허용한도로 했을 때 약 2.8%의 대역폭이 얻어졌으며, 최대 흡수두께는 0.5(mm)로 매우 양호한 박층형 전자파 흡수체가 얻어졌다.

• 대한치과보철학회지
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• 제35권4호
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• pp.719-741
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• 1997

This study was undertaken to compare by Atomic Force Microscope the effects of various finishing and polishing instruments on surface roughness of filling and veneering composite resins. Seven composite resins were studied : Silux Plus (3M Dental Products, U.S.A.), Charisma (Heraeus Kulzer, Germany), Prisma THP (L.D.Caulk, Dentsply, U.S.A.), Photoclearfil (Kuraray, Japan), Cesead (Kuraray, Japan), Thermoresin LC (GC, Japan), Artglass (Heraeus Kulzer, Germany). Samples were placed and polymerized in holes (2mm thick and 8.5mm in diameter) machined in Teflon mold under glass plate, ensuring excess of material and moulded to shape with polyester matrix strip. Except control group (Polyester matrix strip), all experimental groups were finished and polishied under manufacturer's instructions. The finishing and polishing procedure were : carbide bur (E.T carbide set 4159, Komet, Germany), diamond bur (composite resin polishing bur set, GC, Japan), aluminum-oxide disc (Sof-Lex Pop-On, 3M Dental Products, U.S.A.), diamond-particle disc (Dia-Finish, Renfert Germany), white stone bur & rubber point( composite finishing kit, EDENTA, Swiss), respectively. Each specimens were evaluated for the surface roughness with Atomic Force Microscope (AutoProbe CP, Park Scientific Instruments, U.S.A.) under contact mode and constant height mode. The results as follows : 1. Except Thermoresin LC, all experimental composite resin groups showed more rougher than control group after finishing and polishing(p<0.1). 2. A surface as smooth as control group was obtained by $Al_{2}O_{3}$ disc all filling composite resin groups except Charisma and all veneering composite resin groups except Thermoresin LC(p<0.05). 3. In case of Thermoresin LC, there were no statistically significant differences before and after finishing and polishing(p>0.1). 4. Carbide bur, diamond bur showed rough surfaces in all composite resin groups, so these were inappropriate for the final polishing instruments.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.3-6
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• 2009

Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was $1.3^{\circ}$. The infrared absorbance spectrum indicated that the residual stress of AIN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the realization of nitride based electronic and mechanical devices.

• 센서학회지
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• 제16권6호
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• pp.462-466
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• 2007

Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers, in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. The columnar structure of AlN thin films was observed by FE-SEM. X-ray diffraction pattern proved that the grown AlN film on 3C-SiC layers had highly (002) orientation with low value of FWHM (${\Theta}=1.3^{\circ}$) in the rocking curve around (002) reflections. These results were shown that almost free residual stress existed in the grown AlN film on 3C-SiC buffer layers from the infrared absorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.