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Comparative Study on the Characteristics of Heat Dissipation using Silicon Carbide (SiC) Powder Semiconductor Module

탄화규소(SiC) 반도체를 사용한 모듈에서의 방열 거동 해석 연구

  • Jung, Cheong-Ha (Electronic Packaging Research Center, Kangnam University) ;
  • Seo, Won (Electronic Packaging Research Center, Kangnam University) ;
  • Kim, Gu-Sung (Electronic Packaging Research Center, Kangnam University)
  • 정청하 (강남대학교 전자패키지연구소) ;
  • 서원 (강남대학교 전자패키지연구소) ;
  • 김구성 (강남대학교 전자패키지연구소)
  • Received : 2018.12.19
  • Accepted : 2018.12.26
  • Published : 2018.12.31

Abstract

Ceramic substrates applied to power modules of electric vehicles are required to have properties of high thermal conductivity, high electrical insulation, low thermal expansion coefficient and resistance to abrupt temperature change due to high power applied by driving power. Aluminum nitride and silicon nitride, which are applied to heat dissipation, are considered as materials meeting their needs. Therefore, in this paper, the properties of aluminum nitride and silicon nitride as radiator plate materials were compared through a commercial analysis program. As a result, when the process of applying heat of the same condition to aluminum nitride was implemented by simulation, the silicon nitride exhibited superior impact resistance and stress resistance due to less stress and warping. In terms of thermal conductivity, aluminum nitride has superior properties as a heat dissipation material, but silicon nitride is more dominant in terms of reliability.

1200V 이상 급의 전기자동차의 파워 모듈에 적용되는 세라믹 기판은 구동 전력으로 고전력이 인가되는 특성상 고열전도도, 고 전기절연성, 저열팽창계수, 급격한 온도 변화에 대한 저항성의 특성이 요구된다. 방열기판에 적용되는 세라믹 중 질화알루미늄과 질화규소는 그 요구를 충족하는 소재로서 고려되고 있다. 이에 따라 본 논문에서는 질화알루미늄과 질화규소의 방열기판 소재로서의 특성을 상용해석프로그램을 통해 비교하였다. 그 결과 질화규소는 질화알루미늄에 대해 각각 동일한 조건의 열을 부여하는 공정을 시물레이션으로 구현했을 때 스트레스와 휨이 덜 발생하여 더 우세한 내충격성, 내stress성을 보였다. 열전도도 측면에서는 질화알루미늄이 방열 소재로서 더 우수한 특성을 지니지만 신뢰성 측면에서는 질화규소가 더 우세함을 시물레이션을 통해 관찰하였다.

Keywords

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Fig. 1. General power module configuration diagram.

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Fig. 2. Mesh of power module.

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Fig. 3-1. Results of warpage analysis on DBC ceramic bondingprocess (AlN).

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Fig. 3-2. Results of warpage analysis on DBC ceramic bonding process (Si3Nx substrate).

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Fig. 4-1. Results of warpage analysis on heat resistance test (AlN substrate).

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Fig. 4-2. Results of warpage analysis on heat resistance test (Si3Nx substrate).

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Fig. 5-1. Results contour of AlN substrate on module drive test.

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Fig. 5-2. Results contour of Si3Nx substrate on module drive test.

Table 1. Material properties data used in the simulation.

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