• 공업화학
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• 제17권4호
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• pp.335-342
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• 2006

금속 알루미늄의 낮은 환원전위는 전기화학적 산화반응을 통하여 알루미늄과 그 표면에 존재하는 산화막의 구조 및 성질의 변화를 일으킨다. 산성용액에서 알루미늄을 전기화학적으로 에칭하여 표면적을 확대시키고 중성의 용액에서 알루미늄 표면에 치밀한 유전체 산화막을 형성시켜 커패시터의 전극으로 이용하고 있다. 저온의 산성용액에서는 양극산화시 나노크기의 다공층 산화막이 형성되며, 나노구조체의 템플레이트로 사용되고 있다. 이와같은 알루미늄의 전기화학적 특성은 알루미늄을 새로운 기능성을 가진 재료로 변화시킴으로서 다양한 분야에서 응용될 것으로 기대된다.

• Corrosion Science and Technology
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• 제12권5호
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• pp.215-219
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• 2013

Aluminum alloy(3003) can be dissolved during hydration process with hot tap water. In order to increase the stability of aluminum alloy, it was pretreated with anodization and phosphoric acid before hydration process. The effect of pretreatment on the surface property changes was analyzed with X-ray Photoelectron Spectroscopy (XPS) and Inductively Coupled Plasma-Optical Emission Spectrometer (ICP-OES) and their results supported that the increase of hydroxyl group (-OH) on the surface formed during anodization and phosphorous acid treatment prevented the dissolution of aluminum alloy during hydration process at high temperature.

• 한국표면공학회지
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• 제53권4호
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• pp.144-152
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• 2020

In the manufacturing process of joining of aluminum alloy and polymer, the strength of the metal-polymer joining is greatly influenced by the nanostructure of the oxide film. In this study, we investigated the dependence of joining strength on the thickness, structure, pore formation and surface roughness of the formed film. After the two-step anodization process, the surface oxide layer became thinner and rougher resulting in higher joining strength with the polymer. More specifically, after the two-step anodization, the surface roughness, Ra increased from 2.3 to 3.2 ㎛ with pore of three-dimensional (3D) nanostructure, and the thickness of the oxide film was thinned from 350 to 250 nm. Accordingly, the joining strength of the aluminum alloy with polymer increased from 23 to 30 MPa.

• 한국전기전자재료학회논문지
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• 제18권8호
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• pp.708-713
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• 2005

An alumina membrane with nano-sized pore array by anodic oxidation using the thin film aluminum deposited on silicon wafer was fabricated. It Is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2 M was used for low voltage anodization under 100 V, the chromic acid with 0.1 M was used for high voltage anodization over 100 V. The nano-sized pores with diameter of $60\~120$ nm was obtained by low voltage anodization of $40\~80$ V and those of $200\~300$ nm was obtained by high voltage anodization of $140\~200$ V. The pore widening process was employed for obtaining the one-channel with flat surface because the pores of the alumina membrane prepared by the fixed voltage method shows the structure of two-channel with rough surface. Finally, the sample was immersed to the phosphoric acid with 0.1 M concentration to etching the barrier layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.33-33
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• 2010

Recently, a self-organizing process that occurs during the anodization of aluminum in acidic electrolytes has attracted a vast amount of research attentions, coupled with the ever-increasing demand for the development of effective, inexpensive and technologically simple methods for the synthesis of low-dimensional nanostructures over a macroscopic area overcoming many of the drawbacks of conventional lithographic techniques. In this presentation, recent progress in the fabrication of ordered nanoporous anodic aluminum oxide (AAO), including conventional anodization techniques, newly developed pulse anodization, hard anodization processes, and generic approaches to three-dimensional pore structures with periodically modulated diameters. Discussion will also cover the applications of AAO for the development of structurally well-defined extended arrays of low-dimensional nanostructures, such as nanodots, nanotubes, and nanowires, which could be model systems in investigating a diverse range of research problems in chemistry and physics and also be starting materials in realizing advanced electronic devices.

• Corrosion Science and Technology
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• 제21권3호
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• pp.200-208
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• 2022

Aluminum alloy is used by adding various elements according to the needs of the industry. Aluminum alloys such as 5052 and 6061 are known to possess excellent corrosion resistance by adding Mg. Despite their excellent physical properties, corrosion can occur. To solve this problem, an anodization technique generally can improve corrosion resistance by forming an oxide structure with maximized hydrophobic properties through coatings. In this study, the anodizing technique was used to improve the hydrophobicity of aluminum 5052 and 6061 by creating porous nanostructures on top of the surface. An oxide film was formed by applying anodizing voltages of 20, 40, 60, 80, and 100 V to aluminum alloys followed by immersion in 0.1 M phosphoric acid for 30 minutes to expand oxide pores. Contact angle and corrosion characteristics were different according to the structure after anodization. For the 5052 aluminum, the corrosion potential was improved from -363 mV to -154 mV as the contact angle increased from 116° to 136°. For the 6061 aluminum, the corrosion potential improved from -399 mV to -124 mV when the contact angle increased from 116° to 134°.

• 대한전자공학회논문지SD
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• 제47권4호
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• pp.69-74
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• 2010

알루미늄 양극산화(aluminum anodization)의 선택적인 적용을 통하여 DRAM 소자를 위한 새로운 패키지 기판을 제작하였다. 에폭시 계열의 코어(core)와 구리의 적층 형태로 제작되는 일반적인 패키지 기판과는 달리 제안된 패키지 기판은 아래층 알루미늄(aluminum), 중간층 알루미나(alumina, $Al_2O_3$) 그리고 위층 구리(copper)로 구성된다. 알루미늄 기판에 양극산화 공정을 수행함으로써 두꺼운 알루미나를 얻을 수 있으며 이를 패키지 기판의 유전체로 사용할 수 있다. 알루미나층 위에 구리 패턴을 배치함으로써 새로운 2층 금속 구조의 패키지 기판을 완성하게 된다. 또한 알루미늄 양극산화를 선택적인 영역에만 적용하여 내부가 완전히 채워져 있는 비아(via) 구조를 구현할 수 있다. 패키지 설계 시에 비아 인 패드(via in pad) 구조를 적용하여 본딩 패드(bonding pad) 및 볼 패드(ball pad) 상에 비아를 배치하였다. 상기 비아 인 패드 배치 및 2층 금속 구조로 인해 패키지 기판의 배선 설계가 보다 수월해지고 설계 자유도가 향상된다. 새로운 패키지 기판의 주요 설계인자를 분석하고 최적화하기 위하여 테스트 패턴의 2차원 전자기장 시뮬레이션 및 S-파라미터 측정을 진행하였다. 이러한 설계인자를 바탕으로 모든 신호 배선은 우수한 신호 전송을 얻기 위해서 $50{\Omega}$의 특성 임피던스를 가지는 coplanar waveguide(CPW) 및 microstrip 기반의 전송선 구조로 설계되었다. 본 논문에서는 패키지 기판 구조, 설계 방식, 제작 공정 및 측정 등을 포함하여 양극산화 알루미늄 패키지 기판의 특성과 성능을 분석하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.120-122
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• 2005

An alumina membrane with nano-sized pore array by anodic oxidation using thin film aluminum deposited on silicon wafer was fabricated. It is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2M was used for low voltage anodization under 100V, the chromic acid with 0.1M was used for high voltage anodization over 100V. The nano-sized pores with diameter of 60~120nm was obtained by low voltage anodization of 40~90V and those of 200~300nm was obtained by high voltage anodization of 120~160V. Finally, the sample was immersed to the phosphoric acid with 0.1M concentration to etching the barrier layer. The sample will be applied to electronic sensors, field emission display, and template for nano-structure.

• Corrosion Science and Technology
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• 제21권4호
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• pp.290-299
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• 2022

Anodizing is an electrochemical surface treatment method conferring corrosion resistance and durability by forming a thick anodization film on the metal surface. Aluminum has a long service life and high thermal conductivity and formability, as well as excellent corrosion resistance. Aluminum 3003 alloy has improved formability, strength, and corrosion resistance due to the addition of a small amount of manganese. However, corrosion occurs in seawater and environments polluted with corrosion-inducing substances, which reduce corrosion resistance. Therefore, it is necessary to artificially form a thick anodized film to improve corrosion resistance. In this study, the anodization treatment time was 4 minutes, and voltages of 10 V, 20 V, 30 V, 40 V, 50 V, 60 V, 70 V, 80 V, 90 V, and 100 V were applied. The thickness and pore size of the oxide film increased according to the applied voltage. A barrier film was formed under voltage conditions from 10 V to 50 V, and a porous film was formed under voltage conditions from 60 V to 100 V. After anodizing, coating was applied. Wettability and corrosion resistance were observed before and after coating according to the surface shape and thickness of the oxide film.

• Bulletin of the Korean Chemical Society
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• 제35권2호
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• pp.349-352
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• 2014

Anodic alumina oxide (AAO), a self-ordered hexagonal array, has various applications in nanofabrication such as the fabrication of nanotemplates and other nanostructures. In order to obtain highly ordered porous alumina membranes, a two-step anodization or prepatterning of aluminum are mainly conducted with straight electric field. Electric field is the main driving force for pore growth during anodization. However, impurities in aluminum can disturb the direction of the electric field. To confirm this, we anodized two different aluminum foil samples with high purity (99.999%) and relatively low purity (99.8%), and compared the differences in the surface morphologies of the respective aluminum oxide membranes produced in different electric fields. Branched pores observed in porous alumina surface which was anodized in low-purity aluminum and the size; dimensions of the pores were found to be usually smaller than those obtained from high-purity aluminum. Moreover, anodization at high voltage proceeds to a significant level of conversion because of the high speed of the directional electric field. Consequently, anodic alumina membrane of a specific morphology, i.e., meshed pore, was produced.