• Journal of the Korean institute of surface engineering
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• v.53 no.6
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• pp.271-279
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• 2020

Non-ferrous metals, widely used in the mechanical industry, are difficult to machine, particularly by drilling and tapping. Since non-ferrous metals have a strong tendency to adhere to the cutting tool, the tool life is greatly deteriorated. Diamond-like carbon (DLC) is one of the promising candidates to improve the performance and life of cutting tool due to their low frictional property. In this study, a sacrificial DLC layer is applied on the hard nitride coated drill tool to improve the durability. The DLC coatings are fabricated by controlling the acceleration voltage of the linear ion source in the range of 0.6~1.8 kV. As a result, the optimized hardness(20 GPa) and wear resistance(1.4 x 10-8 ㎣/N·m) were obtained at the 1.4 kV. Then, the optimized DLC coating is applied as an sacrificial layer on the hard nitride coating to evaluate the performance and life of cutting tool. The Vickers hardness of the composite coatings were similar to those of the nitride coatings (AlCrN, AlTiSiN), but the friction coefficients were significantly reduced to 0.13 compared to 0.63 of nitride coatings. The drilling test were performed on S55C plate using a drilling machine at rotation speed of 2,500 rpm and penetration rate of 0.25 m/rev. The result showed that the wear width of the composite coated drills were 200 % lower than those of the AlCrN, AlTiSiN coated drills. In addition, the cutting forces of the composite coated drills were 13 and 15 % lower than that of AlCrN, AlTiSiN coated drills, respectively, as it reduced the aluminum clogging. Finally, the application of the DLC sacrificial layer prevents initial chipping through its low friction property and improves drilling quality with efficient chip removal.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.65-70
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• 2015

A study on thermal properties for a single-layer metal and two-layer composites was investigated for the heat-sink application. For the single-layer metal, an aluminum alloy (Al6061) was selected. A screen printed aluminum nitride (AlN) layer on the Al6061 substrate was chosen for the two-layer composites. The thermal conductivity of the sample was determined from the thermal diffusivity measured by the light flash analysis (LFA), specific heat and density. Measured thermal property values were compared to calculated values using the data from the references. The thermal conductivity of composites with screen printed AlN layer on the Al6061 substrate decreased linearly with increasing the thickness of AlN layer. Measured values of the thermal conductivity for composites with $53{\mu}m$ and $163{\mu}m$ thick AlN layers were $114.1W/m{\cdot}K$ and $72.3W/m{\cdot}K$, respectively. In particular, the thermal conductivity of the screen-printed AlN layer was demonstrated by appling the rule of mixture in view point of thermal resistivity. Measured values of the thermal conductivity for AlN layers with the thickness of $53{\mu}m$ and $163{\mu}m$ showed $9.35W/m{\cdot}K$ and $12.40W/m{\cdot}K$, respectively.

• Journal of the Korean Ceramic Society
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• v.42 no.1
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• pp.69-75
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• 2005

To investigate the morphological effect on synthesis of aluminum nitride by SHS Process, two type of Al Powder (granular and flacky shape) with the mean size of 34 $\mu$m and the diluent AIN powders of four different mean sizes.0.12, 9.7, 39.3, 50.5 $\mu$m, were used to prepare green compact. The packing density was fixed to $35 TD\%. The initial pressure of $N_{2}$ and diluent fraction was varied in the range of $1\~10 MPa,\;0.4\~0.7$, respectively. AlN with high purity of $98\% or over and large particle size of about several tens fm can be synthesized by SHS reaction as a consequence of adjusting particle size of AlN dilutent similarly to that of Al reactant. This may be caused by improvement of $N_{2}$ gas permeation to compact after passing the propagation wave. In the case of flaky-shape aluminum used as reactant, instead of granular Al-powder, unstable combustion would be occurred. As the result, irregular propagation of combustion wave and falling-off of maximum temperature would be observed during the reaction.

• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.893-901
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• 1994

In this study, AlN powder of fine particle size and of high purity was synthesized by the carbothermal reduction-nitridation of monodisperse, spherical Al(OH)3 which had been prepared by sol-gel method using Al(O-sec-C4H9)3 as the starting material. Depending on the mixing order and kinds of reducing agents, the optimum condition for the preparation of AlN was determined as follows. AlN single-phase was produced by the carbothermal reduction-nitridation of (1) Benzene-washed Al(OH)3 and the reducing agent, carbon, which was mixed in a ball mill: for 5 hours at 140$0^{\circ}C$ under NH3 atmosphere; (2) The mixture prepared by hydrolysis of alkoxide solution into which carbon had been dispersed beforehand: for 5 hours at 135$0^{\circ}C$ ; (3) Al(OH)3 Poly(furfuryl alcohol) composite powder: for 2.5 hours at 135$0^{\circ}C$; (4) The mixture of Al(OH)3 and polyacrylonitrile: for 5 hours at 140$0^{\circ}C$. Addition of CaF2 increased the nitridation rate when carbon or polyacrylonitrile was used as the reducing agent; but it had no effect on the nitridation rate when furfuryl alcohol was used as the reducing agent.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.759-762
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• 2010

In this investigation, the effects of $N_2/(Ar+N_2)$ gas partial pressure on the structural, electrical, and thermal properties of AlN dielectric layers prepared on aluminum substrates using RF-magnetron sputtering method were analyzed. Among the films, the AlN dielectric film deposited under $N_2/(Ar+N_2)$ gas partial pressure of 75% exhibit the highest AlN (002) preferred orientation, which was grain size of about 15.32 nm and very dense structure. We suggest the possibilities of it's application as a dielectric layer for metal PCB because the AlN films prepared at optimized gas partial pressure can improving the insulating property, the thermal conductivity, and thermal diffusivity of the films.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.5
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• pp.218-224
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• 2003

This paper describes a novel MEMS integration technique on a CMOS chip. MEMS integration on CMOS circuit has many advantages in view of manufacturing cost and reliability. The surface topography of a CMOS chip from a commercial foundry has 0.9 ${\mu}{\textrm}{m}$ bumps due to the conformal coating on aluminum interconnect patterns, which are used for addressing each MEMS element individually. Therefore, it is necessary to achieve a flat mirror-like CMOS chip fer the microelectromechanical system (MEMS) such as micro mirror array. Such CMOS chip needs an additional thickness of the dielectric passivation layer to ease the subsequent planarization process. To overcome a temperature limit from the aluminum thermal degradation, this study uses RF sputtering of silicon nitride at low temperature and then polishes the CMOS chip together with the surrounding dummy pieces to define a polishing plane. Planarization reduces 0.9 ${\mu}{\textrm}{m}$ of the bumps to less than 25 nm.

• Journal of the Korean Ceramic Society
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• v.26 no.1
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• pp.100-108
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• 1989

Aluminum hydroxides were prepared by the alkoxide hydrolysis method using Al-isopropoxide as a starting material and NH4OH as a catalytic agent. When Al-isopropoxide was hydrolyzed in a H2O-NH3 system, only Al(OH)3 was obtained over all pH values. However, AlOOH was formed besides Al(OH)3 when Al-isopropoxide was hydrolyzed in a H2O-NH3-isopropyl alcohol system. The AlOOH/Al(OH)3 ratio was increased as the isopropyl alcohol content was increased. The hydroxides, Al(OH)3 and AlOOH, obtained in this study and the commerical products, $\alpha$-Al2O3 and AlOOH were subjected to the carbothermal reduction and nitridation reaction to product AlN powder, using carbon black as a reducing agent under N2 atmosphere at various temperatures. AlN was synthesized from the obtained Al(OH)3 and the commercial AlOOH at 145$0^{\circ}C$, however, synthesized from the obtained AlOOH and the commercial alpha-alumina at 135$0^{\circ}C$. The temperature difference is assumed to be attributed to the reactivity of those powders. AlN powder prepared from the Al-isopropoxide was observed to have the narrower particle size distribution than that prepared from the commercial $\alpha$-Al2O3 or AlOOH.

• Journal of Powder Materials
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• v.12 no.3
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• pp.214-219
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• 2005

In order to investigate the formation of AlN, mechanical alloying was carried out in $N_2$ and $NH_3$ atmosphere. Differential thermal analysis (DTA), x-ray diffraction (XRD) and chemical analysis were carried out to examine the formation behavior of aluminum nitrides. No diffraction pattern of AlN was observed in XRD analysis of the as-milled powders in $NH_3\;or\;N_2$ atmosphere. However, DTA and chemical analysis indicated that the precursors for AlN were formed in the Al powders milled in $NH_3$ atmosphere. The AlN precursors transformed to AlN after heat treatment at and above $600^{\circ}C$. It was considered that the reaction between Al and $NH_3$ was possible by the formation of fresh Al surface during mechanical alloying of Al powders.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.743-746
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• 2000

Metal-ferroelectric-insulator-semiconductor(MFIS) devices using Pt/$LiNbO_3$/Si structure were successfully fabricated. The dielectric constant of the AIN film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 8.2. The gate leakage current density of MIS devices using a aluminum electrode showed the least value of 1$\times$$1O^{-8}$A/$cm^2$ order at the electric field of 500kV/cm. The dielectric constant of $LiNbO_3$film on AIN/Si structure was about 23 derived from 1MHz capacitance-voltage (C-V) measurement and the resistivity of the film at the field of 500kV/cm was about 5.6$\times$ $1O^{13}$ $\Omega$.cm.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.95-99
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• 2018

High thermal conductivity films with electrically insulating properties have a great potential for the effective heat transfer as substrate and thermal interface materials in high density and high power electronic packages. There have been lots of studies to achieve high thermal conductivity composites using high thermal conductivity fillers such alumina, aluminum nitride, boron nitride, CNT and graphene, recently. Among them, hexagonal-boron nitride (h-BN) nano-sheet is a promising candidate for high thermal conductivity with electrically insulating filler material. This work presents an enhanced heat transfer properties of ceramic/polymer composite films using h-BN nano-sheets and PVA polymer resins. The h-BN nano-sheets were prepared by a mechanical exfoliation of h-BN flakes using organic media and subsequent ultrasonic treatment. High thermal conductivities over $2.8W/m{\cdot}K$ for transverse and $10W/m{\cdot}K$ for in-plane direction of the cast films were achieved for casted h-BN/PVA composite films. Further improvement of thermal conductivity up to $13.5W/m{\cdot}K$ at in-plane mode was achieved by applying uniaxial compression at the temperature above glass transition of PVA to enhance the alignment of the h-BN nano-sheets.