• 한국재료학회지
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• 제22권9호
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• pp.445-449
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• 2012

We investigate the effects of redox reaction on preparation of high purity ${\alpha}$-alumina from selectively ground aluminum dross. Preparation procedure of the ${\alpha}$-alumina from the aluminum dross has four steps: i) selective crushing and grinding, ii) leaching process, iii) redox reaction, and iv) precipitation reaction under controlled pH. Aluminum dross supplied from a smelter was ground to separate metallic aluminum. After the separation, the recovered particles were treated with hydrochloric acid(HCl) to leach aluminum as aluminum chloride solution. Then, the aluminum chloride solution was applied to a redox reaction with hydrogen peroxide($H_2O_2$). The pH value of the solution was controlled by addition of ammonia to obtain aluminum hydroxide and to remove other impurities. Then, the obtained aluminum hydroxide was dried at $60^{\circ}C$ and heat-treated at $1300^{\circ}C$ to form ${\alpha}$-alumina. Aluminum dross was found to contain a complex mixture of aluminum metal, aluminum oxide, aluminum nitride, and spinel compounds. Regardless of introduction of the redox reaction, both of the sintered products are composed mainly of ${\alpha}$-alumina. There were fewer impurities in the solution subject to the redox reaction than there were in the solution that was not subject to the redox reaction. The impurities were precipitated by pH control with ammonia solution, and then removed. We can obtain aluminum hydroxide with high purity through control of pH after the redox reaction. Thus, pH control brings a synthesis of ${\alpha}$-alumina with fewer impurities after the redox reaction. Consequently, high purity ${\alpha}$-alumina from aluminum dross can be fabricated through the process by redox reaction.

• 대한치과보철학회지
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• 제54권4호
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• pp.354-363
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• 2016

목적: 본 연구는 지르코니아 도재 표면의 나노구조 알루미나 코팅이 지르코니아와 레진 시멘트와의 전단결합강도에 미치는 영향을 알아보고자 하였다. 재료 및 방법: 지르코니아 원판 80개를 표면처리방법(산화알루미늄 분사처리(A), 산화알루미늄 분사 후 Rocatec 처리(R), 연마 후 나노구조 알루미나 코팅(PC), 산화알루미늄 분사 후 나노구조 알루미나 코팅(AC))에 따라 4개의 군으로 나누었다. 알루미나 코팅은 질산 알루미늄을 가수분해시킨 용액에 침적 후 $900^{\circ}C$에서 열처리 하여 시행하였다. 지르코니아 표면 코팅은 주사전자 현미경을 이용하여 관찰하였다. 레진 블럭을 레진 시멘트를 이용하여 각 실험군의 지르코니아 표면에 합착하고 열순환처리 전, 후의 전단결합강도를 측정하였다. 결과: 알루미나 코팅을 한 지르코니아 표면은 균일하고 치밀한 나노구조 알루미나가 관찰되었다. PC, AC 군은 열순환처리 전과 후 모두 A와 R 군에 비해 현저하게 높은 전단결합 강도를 보였다. A, R 군은 열순환처리 후에 급격한 결합강도의 감소를 보였으나, PC와 AC군은 열순환처리에 의해 유의할만한 결합강도의 감소를 보이지 않았다. 결론: 지르코니아 표면에 나노구조 알루미나 코팅처리하는 것은 레진시멘트와의 결합강도를 증가시키는 방법이다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1476-1478
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor, inductor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by TaN(tantalum nitride) on alumina substrate. The TCR properties of the TaN films were discussed in terms of crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's annealing temperature and ambient annealing condition. Respectively, at $300{\sim}400^{\circ}C$ on vacuum and nitrogen annealed thin film resistor having a goof thermal stability and lower TCR properties then as deposited thin films expected for the application to the dielectric material of passive component.

• 한국전자파학회논문지
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• 제26권6호
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• pp.540-545
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• 2015

본 논문은 GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) die를 이용하여 S-대역 내부 정합형 전력 증폭기 설계, 제작 그리고 실험 결과에 대해 기술하였다. S-대역 내부 정합형 전력 증폭기를 설계하기 위하여 고유전율을 가지는 기판과 알루미나 기판을 이용하여 입/출력단 정합 회로를 설계 및 제작하였다. 측정 결과로는 펄스 모드로 동작시켰을 때 3 GHz에서 55.4 dBm의 출력 전력, 78 % 드레인 효율 그리고 11 dB의 전력 이득을 얻었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.389-392
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• 2009

Metal oxides have been proposed as an alternative channel material to hydrogenated amorphous silicon in thin film transistors (TFTs) because their higher mobility and stability make them suitable for transistor active layers. Thin films of indium zinc oxide (IZO) were deposited using a High Target Utilization Sputtering (HiTUS) system on various dielectrics, some of which were also deposited with the HiTUS. Investigations into bottom-gated IZO TFTs have found mobilities of 8 $cm^2V\;^1s^{-1}$ and switching ratios of $10^6$. There is a variation in the threshold voltage dependent on both oxygen concentration, and dielectric choice. Silica, alumina and silicon nitride produced stable TFTs, whilst hafnia was found to break down as a result of the IZO.

• 한국표면공학회지
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• 제49권6호
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• pp.530-538
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• 2016

There is a close relationship between the performance and the heat generation of the electronic device. Heat generation causes a significant degradation of the durability and/or efficiency of the device. It is necessary to have an effective method to release the generated heat. Based on demands of the printed circuit board (PCB) manufacturing, it is necessary to develop a robust and reliable plating technique for substrates with high thermal conductivity, such as alumina ($Al_2O_3$), aluminium nitride (AlN), and silicon nitride ($Si_3N_4$). In this study, the plating of metal layers on an insulating silicon nitride ($Si_3N_4$) ceramic substrate was developed. We formed a Pd-$TiO_2$ adhesion layer and used APTES(3-Aminopropyltriethoxysilane) to form OH groups on the surface and adhere the metal layer on the insulating $Si_3N_4$ substrate. We used an electroless Ni plating without sensitization/activation process, as Pd particles were nucleated on the $TiO_2$ layer. The electrical resistivity of Ni and Cu layers is $7.27{\times}10^{-5}$ and $1.32{\times}10^{-6}ohm-cm$ by 4 point prober, respectively. The adhesion strength is 2.506 N by scratch test.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.82-85
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.215-215
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• 2014

Composites layer of Al-Cr-Ni-O system was prepared on a steel plate by hydro-thermal process at $700^{\circ}C$ for 12 hours, which phase identification and thermal conductivity were determined. The composites layer consisted of aluminum nitride, alumina, chromium carbide and aluminium, which density was $3.7kg/m^3$. The thermal conductivity of the coating layer determined by thermal data acquisition system was about 98.0 W/m/ which depended on the AlN content. Numerical modelling of the heat transfer behavior of the coating layer was well agreement with the empirical data.

• 반도체디스플레이기술학회지
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• 제3권4호
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• pp.33-37
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• 2004

As the high speed and high integration of semiconductor devices and the generation of heat increases resulted in the effective heat dissipation influences on the performance and lifetime of semiconductor devices. The heat resistance or heat spread function of EMC(epoxy molding compound) which protects these devices became one of very important factors in the evaluation of semiconductor chips. Recently, silica, alumina, AlN(aluminum nitride) powders are widely used as the fillers of EMC. The filler loading in encapsulants was high up to about 80 vol%. A high loading of filler was improved low water absorption, low stress, high strength, better flowability and high thermal conductivity. In this study, the thermal properties were investigated through thermal, mechanical and microstructure. Thermophysical properties were investigated by laser flash and differential scanning calorimeter(DSC). For detailed inspection of materials, the samples were examined by SEM.

• 반도체디스플레이기술학회지
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• 제2권4호
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• pp.31-35
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• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.