• Korean Journal of Materials Research
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• v.22 no.9
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• pp.445-449
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• 2012

We investigate the effects of redox reaction on preparation of high purity ${\alpha}$-alumina from selectively ground aluminum dross. Preparation procedure of the ${\alpha}$-alumina from the aluminum dross has four steps: i) selective crushing and grinding, ii) leaching process, iii) redox reaction, and iv) precipitation reaction under controlled pH. Aluminum dross supplied from a smelter was ground to separate metallic aluminum. After the separation, the recovered particles were treated with hydrochloric acid(HCl) to leach aluminum as aluminum chloride solution. Then, the aluminum chloride solution was applied to a redox reaction with hydrogen peroxide($H_2O_2$). The pH value of the solution was controlled by addition of ammonia to obtain aluminum hydroxide and to remove other impurities. Then, the obtained aluminum hydroxide was dried at $60^{\circ}C$ and heat-treated at $1300^{\circ}C$ to form ${\alpha}$-alumina. Aluminum dross was found to contain a complex mixture of aluminum metal, aluminum oxide, aluminum nitride, and spinel compounds. Regardless of introduction of the redox reaction, both of the sintered products are composed mainly of ${\alpha}$-alumina. There were fewer impurities in the solution subject to the redox reaction than there were in the solution that was not subject to the redox reaction. The impurities were precipitated by pH control with ammonia solution, and then removed. We can obtain aluminum hydroxide with high purity through control of pH after the redox reaction. Thus, pH control brings a synthesis of ${\alpha}$-alumina with fewer impurities after the redox reaction. Consequently, high purity ${\alpha}$-alumina from aluminum dross can be fabricated through the process by redox reaction.

• The Journal of Korean Academy of Prosthodontics
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• v.54 no.4
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• pp.354-363
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• 2016

Purpose: The aim of this study was to investigate whether the application of nano-structured alumina coating to the surface of Y-TZP could enhance the bond strength with resin cement. Materials and methods: A total of 80 zirconia plates were prepared and divided into four groups. : 1) airborne particle abrasion treatment (A) : 2) Rocatec treatment after airborne particle abrasion (R) : 3) nano-structured alumina coating treatment after polishing (PC) and 4) nano-structured alumina coating after airborne particle abrasion (AC). Alumina coating was formed by the hydrolysis of aluminium nitride (AlN) powder and heat treatment at $900^{\circ}C$. Coating patterns were observed with FE-SEM. Resin block was bonded to treated zirconia ceramics using resin cement. The shear bond strengths were measured before and after thermocycling. Results: The FE-SEM images show a dense and uniform nano-structured alumina coating structure, which enhances shear bond strength by increasing micro mechanical interlocking to resin cement. PC and AC groups showed higher shear bond strengths than A and R groups before and after thermocycling. A and R groups displayed significant drops in shear bond strength after thermocycling. However, PC and AC groups did not show any meaningful decreases in shear bond strength after thermocycling. Conclusion: Treatment of Y-TZP ceramics with nano-structured alumina coating could significantly increase their shear bond strength.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1476-1478
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor, inductor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by TaN(tantalum nitride) on alumina substrate. The TCR properties of the TaN films were discussed in terms of crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's annealing temperature and ambient annealing condition. Respectively, at $300{\sim}400^{\circ}C$ on vacuum and nitrogen annealed thin film resistor having a goof thermal stability and lower TCR properties then as deposited thin films expected for the application to the dielectric material of passive component.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.6
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• pp.540-545
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• 2015

This paper presents the design, fabrication and measurement results of a S-band internally-matched power amplifier using Gallium Nitride High Electron Mobility Transistor(GaN HEMT) die. In order to fabricate the S-band internally-matched power amplifier, a high dielectric substrate and alumina were used for input/output matching circuits. The measured output power is 55.4 dBm, the drain efficiency is 78 % and the power gain is 11 dB under pulse operation at the frequency of 3 GHz.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.389-392
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• 2009

Metal oxides have been proposed as an alternative channel material to hydrogenated amorphous silicon in thin film transistors (TFTs) because their higher mobility and stability make them suitable for transistor active layers. Thin films of indium zinc oxide (IZO) were deposited using a High Target Utilization Sputtering (HiTUS) system on various dielectrics, some of which were also deposited with the HiTUS. Investigations into bottom-gated IZO TFTs have found mobilities of 8 $cm^2V\;^1s^{-1}$ and switching ratios of $10^6$. There is a variation in the threshold voltage dependent on both oxygen concentration, and dielectric choice. Silica, alumina and silicon nitride produced stable TFTs, whilst hafnia was found to break down as a result of the IZO.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.530-538
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• 2016

There is a close relationship between the performance and the heat generation of the electronic device. Heat generation causes a significant degradation of the durability and/or efficiency of the device. It is necessary to have an effective method to release the generated heat. Based on demands of the printed circuit board (PCB) manufacturing, it is necessary to develop a robust and reliable plating technique for substrates with high thermal conductivity, such as alumina ($Al_2O_3$), aluminium nitride (AlN), and silicon nitride ($Si_3N_4$). In this study, the plating of metal layers on an insulating silicon nitride ($Si_3N_4$) ceramic substrate was developed. We formed a Pd-$TiO_2$ adhesion layer and used APTES(3-Aminopropyltriethoxysilane) to form OH groups on the surface and adhere the metal layer on the insulating $Si_3N_4$ substrate. We used an electroless Ni plating without sensitization/activation process, as Pd particles were nucleated on the $TiO_2$ layer. The electrical resistivity of Ni and Cu layers is $7.27{\times}10^{-5}$ and $1.32{\times}10^{-6}ohm-cm$ by 4 point prober, respectively. The adhesion strength is 2.506 N by scratch test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.82-85
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.215-215
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• 2014

Composites layer of Al-Cr-Ni-O system was prepared on a steel plate by hydro-thermal process at $700^{\circ}C$ for 12 hours, which phase identification and thermal conductivity were determined. The composites layer consisted of aluminum nitride, alumina, chromium carbide and aluminium, which density was $3.7kg/m^3$. The thermal conductivity of the coating layer determined by thermal data acquisition system was about 98.0 W/m/ which depended on the AlN content. Numerical modelling of the heat transfer behavior of the coating layer was well agreement with the empirical data.

• Journal of the Semiconductor & Display Technology
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• v.3 no.4
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• pp.33-37
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• 2004

As the high speed and high integration of semiconductor devices and the generation of heat increases resulted in the effective heat dissipation influences on the performance and lifetime of semiconductor devices. The heat resistance or heat spread function of EMC(epoxy molding compound) which protects these devices became one of very important factors in the evaluation of semiconductor chips. Recently, silica, alumina, AlN(aluminum nitride) powders are widely used as the fillers of EMC. The filler loading in encapsulants was high up to about 80 vol%. A high loading of filler was improved low water absorption, low stress, high strength, better flowability and high thermal conductivity. In this study, the thermal properties were investigated through thermal, mechanical and microstructure. Thermophysical properties were investigated by laser flash and differential scanning calorimeter(DSC). For detailed inspection of materials, the samples were examined by SEM.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.31-35
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• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.