• 한국치위생학회지
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• 제10권3호
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• pp.531-540
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• 2010

Objectives : In this study, following the cavity restorations with low copper conventional alloy, high copper admixed one and high copper unicompositional one, which are used the most frequently in a clinical setting at the present, to experiment the time-dependent changes of strength, bubbles were examined. Besides, to examine the detrimental effects of mercury contained in dental amalgam, the amount of mercury release was evaluated. Methods : As dental amalgams which were used herein, [BESTALOY], [Hi-Aristaloy 21] and [Sybraloy] were selected for a low-copper conventional amalgam, a high-copper admixed one and a high-copper unicompositional one in the corresponding order. The formation of bubbles and the weight ratio of mercury release were evaluated using a field emission scanning electron microscope (FE-SEM). Thus, the following results were obtained: Results : 1. The time-dependent amount of mercury release reached a statistical significance in three types of alloys, which was shown in such a descending order as [BESTALOY], [Hi-Aristaloy 21] and [Sybraloy]. 2. A low-copper conventional type, BESTALOY is a cutting type and it was found to have an increased formation of fine bubbles. In the remaining two types, [Hi-Aristaloy 21] (a high-copper admixed alloy) and [Sybraloy] (a high-copper unicompositional alloy), the time-dependent changes in the formation of bubbles was negligible. Conclusions : Accordingly, this type of mercury release from amalgam alloy denotes the difference in the weight ratio of total constituents between after 24 hours and after two weeks. But further studies are warranted to examine the amount of mercury release which is detrimental to human bodies. Besides, a low-copper conventional alloy is a cutting type and it was characterized by the abundant formation of bubbles in a time-dependent manner. This implies that the strength of amalgam is impaired, which should be considered in selecting the appropriate amalgam alloy in a clinical setting.

• 한국주조공학회지
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• 제30권2호
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• pp.76-82
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• 2010

Effect of reaction time and sludge formation on the thickness of die soldering reaction layer has been studied in Al-9Si-0.3Mg casting alloy. Ternary ${\alpha}_{bcc}-Al_8Fe_2Si$ and ${\alpha}_{hcp}-Al_8Fe_2Si$ intermetallic compounds formed at the interface of SKD61 tool steel by interaction diffusion of Al, Fe and Si atoms after 0.5hr and 6hr immersion time, respectively. Binary ${\eta}-Fe_2Al_5$ additionally formed at the interface of SKD61 tool steel after 10hr immersion time. Thickness of soldering reaction layer in die surface increased as immersion time increased from 0.5hr to 24hr. Sludge formation was ascertained in the samples which were immersed in the melts more than 10hr. Reaction of die soldering after sludge formation was more accelerated than that of before sludge formation due to a decrease in Fe content, followed by higher diffusion rate of Al in the melt by sludge formation.

• 한국표면공학회지
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• 제55권5호
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• pp.292-298
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• 2022

In this study, PEO (plasma electrolytic oxidation) film formation behavior of AZ31 Mg alloy under application of 300 Hz pulse current was studied by the analyses of V-t curve, arc generation behavior, PEO film thickness and morphology of PEO films with treatment time in 0.05 M NaOH + 0.05 M Na₂SiO₃ + 0.1 M NaF solution. PEO films was observed to grow after 10 s of application of pulse current together with generation of micro-arcs. PEO film grew linearly with treatment time at a growth rate of about 5.58 ㎛/min at 200 mA/cm² of pulse current but increasing rate of film formation voltage became lowered largely with increasing treatment time after passing about 250 V, suggesting that resistivity of PEO films during micro-arc generation decreases with increasing film formation voltage at more than 250 V.

• Corrosion Science and Technology
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• 제5권4호
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• pp.141-148
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• 2006

The chemical composition and the semiconducting properties of the passive films formed on Alloy 690 in various film formation conditions were investigated by XPS, photocurrent measurement, and Mott-Schottky analysis. The XPS and photocurrent spectra showed that the passive films formed on Alloy 690 in pH 8.5 buffer solution at ambient temperature, in air at $400^{\circ}C$, and in PWR condition comprise $Cr_2O_3$, $Cr(OH)_3$, ${\gamma}-Fe_2O_3$, NiO, and $Ni(OH)_2$. The thermally grown oxide in air and the passive film formed at high potential (0.3 $V_{SCE}$) in pH 8.5 buffer solution were highly Cr-enriched, whereas the films formed in PWR condition and that formed at low potential (-0.3 $V_{SCE}$) in pH 8.5 buffer solution showed relatively high Ni content and low Cr content. The Mott-Schottky plots exhibited n-type semiconductivity, inferring that the semiconducting properties of the passive films formed on Alloy 690 in various film formation conditions are dominated by Cr-substituted ${\gamma}-Fe_2O_3$. The donor density, i.e., concentration of oxygen vacancy, was measured to be $1.2{\times}10^{21}{\sim}4.6{\times}10^{21}cm^{-3}$ and lowered with increase in the Cr content in the passive film.

• Applied Microscopy
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• 제46권3호
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• pp.160-163
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• 2016

Effect of dealloying condition on the formation of nanoporous structure in melt-spun $Al_{60}Ge_{30}Mn_{10}$ alloy has been investigated in the present study. In as-melt-spun $Al_{60}Ge_{30}Mn_{10}$ alloy spinodal decomposition occurs in the undercooled liquid during cooling, leading to amorphous phase separation. By immersing the as-melt-spun $Al_{60}Ge_{30}Mn_{10}$ alloy in 5 wt% HCl solution, Al-rich amorphous region is leached out, resulting in an interconnected nano-porous $GeO_x$ with an amorphous structure. The dealloying temperature strongly affects the whole dealloying process. At higher dealloying temperature, dissolution kinetics and surface diffusion/agglomeration rate become higher, resulting in the accelerated dealloying kinetics, i.e., larger dealloying depth and coarser pore-ligament structure.

• 한국표면공학회지
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• 제22권4호
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• pp.179-184
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• 1989

This study seeks to the morphological changes in the oxide skin of the Al-10wt.%si alloy melts. These changes depend on the oxidation time and the temperature of the molten alloy, as well as the effects of adding Mg, Cu and Ni. Thess affects observed by X-ray diffractometer(XRD) and scanning electron microscope(SEM)' Very litte oxide skins on Al-10wtwt.%Si alloy melts can be detected by XRD because it is less than the measuring capabillity of the XRD, or the formation of noncrystalline oxide skins oxide skins canbe deteced by SEM. The addition of 1%Mg and 1%Cu-1%Mg-2.5%Ni to this base alloy crystallized the structure of the oxide skins and increased the oxidation in proportion to the length of time, but adding 3% had hardiy anyaffect at all on the crystal structure of the oxide skins.

• 한국표면공학회지
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• 제52권5호
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• pp.265-274
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• 2019

Formation behavior of PEO (Plasma Electrolytic Oxidation) films on AZ31 Mg alloy was investigated under application of 310 Hz AC as a function of $Na_3PO_4$ concentration from 0.02 M to 0.2 M. Film formation voltage and in-situ observation of arcs generated on the specimen surface were recorded with time, and surface morphologies of the PEO films were investigated using optical microscopy, confocal scanning laser microscopy and scanning electron microscopy. PEO film formation voltage decreased linearly with increasing $Na_3PO_4$ concentration which is attributed to the increase of solution pH. PEO films were grown uniformly over the entire surface in $Na_3PO_4$ solutions between 0.05 M and 0.1 M. However, non-uniform PEO films with white spots were formed in $Na_3PO_4$ solutions containing more than 0.1 M. Thickness and roughness of PEO films on AZ31 Mg alloy increased linearly with increasing $Na_3PO_4$ concentration and their increasing rates appeared to be much higher under 1 M than above 1 M. The experimental results suggest that phosphate ions can contribute to the formation of PEO films but higher $Na_3PO_4$ concentration more than 1 M results in local damages of PEO films due to repeated generation of white arcs at the same surface site of AZ31 Mg alloy.

• 열처리공학회지
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• 제10권4호
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• pp.237-245
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• 1997

A study was conducted to examine the effects of In addition on the precipitation behaviors of Al-2.1Li-2.9Cu alloy by differential scanning calorimetry, transmission electron microscopy and micro-hardness tester. DSC analysis was measured over the temperature range of $25{\sim}550^{\circ}C$ at a heating rate of $2{\sim}20^{\circ}C$/min. The heat evolution peaks due to the formation of GP zone and ${\delta}$'phase shift to higher temperature and the peaks to $T_1$ and ${\theta}$'phases shift to lower temperature by In addition. From this result, it was proved that the formation of GP zone and ${\delta}$'phase is suppresed whereas that of $T_1$ and ${\theta}$'phases are accelerated by the In addition of 0.15wt%. The age hardening curve aged at $190^{\circ}C$ showed that the In bearing alloy(alloy B) has more faster age hardening response and a higher peak hardness than In-free alloy(alloy A), attributed to the fine and homogeneous distribution of $T_1$ and ${\theta}$'phases. The activation energies for the formation of ${\delta}$'phase in In-free and In-bearing alloys are 22.3kcal/mol and 18.6kcal/mol, respectively. Those for $T_1(+{\theta}^{\prime})$ phase of In-free and In-bearing alloys are 24.3 and 37.5kcal/mol, respectively. Quenched-in excess vacancies play an important role to the formation of precipitates.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.53-53
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• 2011

As the dimension of Cu interconnects has continued to reduce, its resistivity is expected to increase at the nanoscale due to increased surface and grain boundary scattering of electrons. To suppress increase of the resistivity in nanoscale interconnects, alloying Cu with other metal elements such as Al, Mn, and Ag is being considered to increase the mean free path of the drifting electrons. The formation of Al alloy with a slight amount of Cu broadly studied in the past. The study of Cu alloy including a very small Al fraction, by contrast, recently began. The formation of Cu-Al alloy is limited in wet chemical bath and was mainly conducted for fundamental studies by sputtering or evaporation system. However, these deposition methods have a limitation in production environment due to poor step coverage in nanoscale Cu metallization. In this work, gap-filling of Cu-Al alloy was conducted by cyclic MOCVD (metal organic chemical vapor deposition), followed by thermal annealing for alloying, which prevented an unwanted chemical reaction between Cu and Al precursors. To achieve filling the Cu-Al alloy into sub-100nm trench without overhang and void formation, furthermore, hydrogen plasma pretreatment of the trench pattern with Ru barrier layer was conducted in order to suppress of Cu nucleation and growth near the entrance area of the nano-scale trench by minimizing adsorption of metal precursors. As a result, superconformal gap-fill of Cu-Al alloy could be achieved successfully in the high aspect ration nanoscale trenches. Examined morphology, microstructure, chemical composition, and electrical properties of superfilled Cu-Al alloy will be discussed in detail.

• 한국재료학회지
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• 제17권9호
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.