• Title/Summary/Keyword: AlSiCu

Search Result 500, Processing Time 0.027 seconds

Fully Integrated Electromagnetic Noise Suppressors Incorporated with a Magnetic Thin Film on an Oxidized Si Substrate

  • Sohn, Jae-Cheon;Han, S.H.;Yamaguchi, Masahiro;Lim, S.H.
    • Journal of Magnetics
    • /
    • v.12 no.1
    • /
    • pp.21-26
    • /
    • 2007
  • Si-based electromagnetic noise suppressors on coplanar waveguide transmission lines incorporated with a $SiO_2$ dielectric layer and a nanogranular Co-Fe-Al-O magnetic thin film are reported. Unlike glass-based devices, large signal attenuation is observed even in the bare structure without coating the magnetic thin film. Much larger signal attenuation is achieved in fully integrated devices. The transmission scattering parameter ($S_{21}$) is as small as -90 dB at 20 GHz at the following device dimensions; the thicknesses of the $SiO_2$ and Co-Fe-Al-O thin films are 0.1 $\mu$m and 1 $\mu$m, respectively, the length of the transmission line is 15 mm, and the width of the magnetic thin film is 2000 $\mu$m. In all cases, the reflection scattering parameter ($S_{11}$) is below -10 dB over the whole frequency band. Additional distributed capacitance formed by the Cu transmission line/$SiO_2$/Si substrate is responsible for these characteristics. It is considered that the present noise suppressors based on the Si substrate are a first important step to the realization of MMIC noise suppressors.

Cu pad 위에 무전해 도금된 플립칩 UBM과 비솔더 범프에 관한 연구

  • 나재웅;백경욱
    • Proceedings of the International Microelectronics And Packaging Society Conference
    • /
    • 2001.07a
    • /
    • pp.95-99
    • /
    • 2001
  • Cu is considered as a promising alternative interconnection material to Al-based interconnection materials in Si-based integrated circuits due to its low resistivity and superior resistance to the electromigration. New humping and UBM material systems for solder flip chip interconnection of Cu pads were investigated using electroless-plated copper (E-Cu) and electroless-plated nickel (E-Ni) plating methods as low cost alternatives. Optimally designed E-Ni/E-Cu UBM bilayer material system can be used not only as UBMs for solder bumps but also as bump itself. Electroless-plated E-Ni/E-Cu bumps assembled using anisotropic conductive adhesives on an organic substrate is successfully demonstrated and characterized in this study

  • PDF

Effects of Base Metal on the Partial Oxidation of Methane Reaction (메탄의 부분산화반응에 미치는 Base metal의 영향)

  • 오영삼;장보혁;백영순;이재의;목영일
    • Journal of Energy Engineering
    • /
    • v.8 no.2
    • /
    • pp.256-264
    • /
    • 1999
  • The performance of the Pt-B/cordierite catalysts (2 wt%) Pt, 70 wt% Alumina, 28 wt%) Ceria and Zirconia, B: base metal) loaded with 6∼12 wt% Mn, Cu, V, Co, Cr and Ba, respectively was studied for partial oxidation of methane reaction and compared with that of Ni loaded catalyst. As a results, it was found that Ba, Co, Cr as well as Ni loaded catalysts showed higher activity for methane partial oxidation of methane than the Mn, Cu and V loaded catalyst. But it was known that catalysts having good activity for methane showed the good activity for coke formation, too. A XRD analysis of the catalyst before and after the reaction using 5 wt% Ni/Al$_2$O$_3$) showed that there were three Ni phases. In these results, it was found that methane oxidation reaction occulted at the front of the catalyst bed consisted of NiAl$_2$O$_4$and NiO and reforming reaction occurred at the rear part of the catalyst bed consisted of reduced Ni.

  • PDF

Pitting Characteristics and Electrochemical Polarization Behaviors in Al-Cu-Si-Mg-Ag-Zr Alloys with Ageing (Al-Cu-Li-Mg-Ag-Zr합금의 시효에 따른 전기화학적 분극 거동과 공식특성)

  • Min, B.C.;Chung, D.S.;Shon, T.W.;Cho, H.K.
    • Journal of the Korean Society for Heat Treatment
    • /
    • v.9 no.2
    • /
    • pp.103-111
    • /
    • 1996
  • In this paper, we studied on both electrochemical polarization behaviors and pitting characteristics of ultra high strength Al-Cu-Li-Mg-Ag-Zr alloys(named C1 and C2) and 2090 alloy according to their treatments in the deaerated 3.5% NaCl, using by the potentiodynamic and the potentiostatic method, SEM micrograph and surface roughness including depth of pitting attack. With the cyclic polarization curves, the hysteresis of the C1 and C2 alloys appeared more remarkably than that of the 2090 alloy, because of precipitation microstructural difference between C1, C2 alloys and 2090 alloy. In the pitting experiments, the correlations between pitting growth and aging conditions were analyzed with the SEM micrograph and measurement of the pit depth.

  • PDF

Impact Tensile Properties and Intergranular Fracture Behavior with Strain Rate Variations of Al-M g-X (X = Cr,Si) Alloy

  • Chang-Suk Han;Min-Gyu Chun;Sung-Soon Park;Seung-In Lim
    • Korean Journal of Materials Research
    • /
    • v.34 no.7
    • /
    • pp.330-340
    • /
    • 2024
  • Al-Mg-Si alloys are light weight and have excellent corrosion resistance, and are attracting attention as a liner material for high-pressure hydrogen containers in hydrogen fuel cell vehicles. Because it has excellent plastic hardening properties, it is also applied to car body panel materials, but it is moderate in strength, so research to improve the strength by adding Si-rich or Cu is in progress. So far, the authors have conducted research on the intergranular fracture of alloys with excessive Si addition from the macroscopic mechanical point of view, such as specimen shape. To evaluate their impact tensile properties, the split-Hopkinson bar impact test was performed using thin plate specimens of coarse and fine grain alloys of Al-Mg-X (X = Cr,Si) alloy. The effect of the shape of the specimen on the characteristics was studied through finite element method (FEM) analysis. As a result, it was found that the intergranular fracture of the alloy with excessive Si depended on the specimen width (W)/grain size (d), which can be expressed by the specimen size and grain size. As W/d decreases, the intergranular fracture transforms into a transgranular fracture. As the strain rate increases, the fracture elongation decreases, and the fracture surface of the intergranular fracture becomes more brittle. It was confirmed that intergranular fracture occurred in the high strain rate region even in materials with small grain sizes.

Formation of Sn-Cu Solder Bump by Electroplating for Flip Chip (플립칩용 Sn-Cu 전해도금 솔더 범프의 형성 연구)

  • 정석원;강경인;정재필;주운홍
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.10 no.4
    • /
    • pp.39-46
    • /
    • 2003
  • Sn-Cu eutectic solder bump was fabricated by electroplating for flip chip and its characteristics were studied. A Si-wafer was used as a substrate and the UBM(Under Bump Metallization) of Al(400 nm)/Cu(300 nm)/Ni(400 nm)/Au(20 nm) was coated sequentially from the substrate to the top by an electron beam evaporator. The experimental results showed that the plating ratio of the Sn-Cu increased from 0.25 to 2.7 $\mu\textrm{m}$/min with the current density of 1 to 8 A/d$\m^2$. In this range of current density the plated Sn-Cu maintains its composition nearly constant level as Sn-0.9∼1.4 wt%/Cu. The solder bump of typical mushroom shape with its stem diameter of 120 $\mu\textrm{m}$ was formed through plating at 5 A/d$\m^2$ for 2 hrs. The mushroom bump changed its shape to the spherical type of 140 $\mu\textrm{m}$ diameter by air reflow at $260^{\circ}C$. The homogeneity of chemical composition for the solder bump was examined, and Sn content in the mushroom bump appears to be uneven. However, the Sn distributed more uniformly through an air reflow.

  • PDF

Fabrication of High-Tc Superconducting $YBa_2Cu_3O_{7-x}$ Thin Films by Off-Axis RF Magnetron Sputtering (Off-Axis RF 마그네트론 스퍼터링에 의한 $YBa_2Cu_3O_{7-x}$ 고온 초전도 박막의 제조)

  • 성건용;서정대;강광용;장순호
    • Journal of the Korean Ceramic Society
    • /
    • v.28 no.3
    • /
    • pp.243-251
    • /
    • 1991
  • High-Tc YBa2Cu3O7-x superconducting thin films have been prepared by single-target off-axis RF magnetron sputtering. Optimal ratio of Y : Ba : Cu of the single-target was determined as 1 : 1.65 : 3.35 in order to obtain the stoichiometric films. Tc, crystalline phase, and microstructures of the surface and cross-section of the ex-situ YBa2Cu3O7-x thin films on MgO(100) had a Tc, zero of 80K, and the films on LaAlO3/Si had a Tc, on-set of 90 K and a Tc, zero of 70 K.

  • PDF