• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.389-395
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• 2000

In this paper, we propose the formation of an $Al_2O_3$ pre-layer using a protective Si-oxide layer and Al layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at $800^{\circ}C$ led to the growth of epitaxial $Al_2O_3$ layer on Si(111). And ${\gamma}-Al_2O_3$ layer was grown on the $Al_2O_3$ per-layer. Etching of the Si substrate by $N_2O$ gas could be avoided in the initial growth stage by the $Al_2O_3$ pre-layer. It was confirmed that the $Al_2O_3$ pre-layer was effective in improving the surface morphology of the very thin ${\gamma}-Al_2O_3$ films.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.7
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• pp.8-16
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• 2010

In this paper, we investigated the effects of $O_2$ fraction on the properties of Al-doped ZnO (AZO) thin films prepared by radio frequency (RF) magnetron sputtering. Hall, photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) measurements revealed that the p-type conductivity was exhibited for AZO films with an $O_2$ fraction of 0.9 while the n-type conductivity was observed for films with $O_2$ fractions in range of 0 - 0.6. PL and XPS also showed that the acceptor-like defects, such as zinc vacancies and oxygen interstitials, increased in films prepared by an $O_2$ fraction of 0.9, resulting in the p-type conductivity in the films. Hall results indicated that AZO films prepared by $O_2$ fractions in range of 0 - 0.6 can be used for electrode layers in the applications of transparent thin film transistor. We concluded from the X-ray diffraction analysis that worse crystallinity with a smaller grain size as well as higher tensile stress was observed in the films prepared by a higher $O_2$ fraction, which is related to incorporation of more oxygen atoms into the films during deposition. The study of atomic force microscope suggested that the smoother surface morphology was observed in films prepared by using $O_2$ fraction, which causes the higher resistivity in those films, as evidenced by Hall measurements.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.130-131
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• 2007

초고경도 박막을 얻기 위해 질화물을 이용한 CrN / CrAlN 초격자 박막을 CFUBM 시스템을 통해 합성하였다. 초격자 박막의 각층의 두께 (${\lambda}$)는 기판의 회전 속도를 이용하여 제어하여 4.4 에서 44.1 nm 까지 합성하였다. 박막의 결정구조 및 미세구조를 분석하기 위하여 고분해능 X선 회절 분석기 (HR-XRD)를 이용하였으며, 박막의 기계적 성질은 나노 인덴터와 ball on disk tester를 통해 분석하였다. CrN / CrAlN 초격자 박막은 각층의 두께 (${\lambda}$)에 따라 28.77 GPa에서 31.97 GPa의 경도 값을 나타내었으며, 미세구조와 기계적 특성이 변화를 관찰할 수 있었다.

• Transactions of the Korean hydrogen and new energy society
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• v.10 no.1
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• pp.59-69
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• 1999

AlN thin films were fabricated by reactive sputtering for the application of MIS devices with Al/AlN/Si structure. It has investigated the surface morphology change, I-V characteristics, C-V characteristics, and chemical composition of AlN films with the intriducing time of hydrogen on the fixed deposition condition(RF power: 150W, sputtering pressure: 5mTorr, flow rate ratio of $Ar/N_2=1$, hydrogen concentration: 5%). By addition of the hydrogen the deposition rate decreased drastically whereas the surface morphology changed little. It has been found from the analysis of I-V and C-V characteristics curves that the films deposited with hydrogen addition in initial stage had lower leakage current density, lower flat band voltage and hystersis profile when compared with those with hydrogen addition in last stage. The oxygen concentration in AlN films decreased with addition of hydrogen gas, which suggesting a profitable role in the insulation and C-V characteristics of AlN films.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.65-66
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• 2007

비대칭 마그네트론을 이용하여 사원계 CrTiAlN 나노 복합 박막을 합성하였고 합성된 박막의 특성을 분석하였다. CrTiAlN 나노복합 박막의 미세구조는 CrN (111)과 CrN (200)방향으로 성장하였고 기계적 특성은 $30\;{\sim}\;39\;GPa$의 경도 값을 얻었다. 질소 분압이 0.33 Pa에서 가장 높은 경도 값을 얻을 수 있었다.

• Korean Journal of Crystallography
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• v.5 no.2
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• pp.85-92
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• 1994

Ferroelectric Bi4Ti3012 thin films have been grown on LaAlO(001) by Pulsed-laser deposition. Phase formation and structural films prepared of the films prepared at varigus deposition temperatures are investigated using x-ray diffraction The film grown at 740℃ shows epitaxial growth behavior with c-akis normal to the substrate. N2tBmstiucCures of Bi4Ti3012/YBa2Cu307-x/LaAIO3(001) have been in-situ grown. Even though the a-and b-axes of the Yba2Cu307-x layer show epitaxial growth behavior.

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.41-46
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• 2013

Efficient and inexpensive solar cells are necessary for photo-voltaic to be widely adopted for mainstream electricity generation. For this to occur, the recombination losses of charge carriers (i.e. electrons or holes) must be minimized using a surface passivation technique suitable for manufacturing. Recently it has been shown that aluminum oxide thin films are negatively charged dielectrics that provide excellent surface passivation of silicon solar cells to attract positive-charged holes. Especially aluminum oxide thin film is a quite suitable passivation on the rear side of p-type silicon solar cells. This paper, it demonstrate the interfacial microstructure and electrical properties of mono-crystalline silicon surface passivated by $Al_2O_3$ films during firing process as applied for screen-printed solar cells. The first task is a comparison of the interfacial microstructure and chemical bonds of PECVD $Al_2O_3$ and of PEALD $Al_2O_3$ films for the surface passivation of silicon. The second is to study electrical properties of double-stacked layers of PEALD $Al_2O_3$/PECVD SiN films after firing process in the temperature range of $650{\sim}950^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.53-58
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• 1997

It is well known that the equiatomic FeAl alloy crystallizes in a paramagnetic CsCl structure and is very stable in a wide temperature range owing to a significant charge transfer from Al to Fe. A presence of structural defects normally enhances the magnetic and magneto-optical properties of this alloy. In this study spin-resolved photoemission and magnetic circular dichroism (MCD) were carried out on both ordered and disordered $Fe_{0.52}Al_{0.48}$ alloy films. The disordered state in the alloy films was obtained by a vapor quenching deposition on cooled substrates. It is shown that the order-disorder transition in the Fe0.52Al0.48 alloy films leads to a significant change in the spin polarization. Form the MCD results the orbital and spin magnetic moments of the constituent atoms are obtained. According to the sum rule the spin and orbital magnetic moments of Fe in the disordered FeAl film are $\mu\frac{SR}{spin}=0.8\mu_B$ and $\mu\frac{SR}{orb}=0.14\mu_B$ respectively. The spin magnetic moment is also evaluated to be $\mu\frac{BR}{spin}=0.77\mu_B$ by the branching ration method employing a photon polarization of 90%.