• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.192-192
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• 2014

TiN, Ti(C,N), TiAlSiN, TiZrAlN, TiAlCrSiN 박막을 제조한 후, 이 들의 고온산화 특성을 SEM, EPMA, TGA, TEM, AES 등을 이용하여 조사하고, 산화기구를 제안하였다. 산화속도, 생성되는 산화물의 종류와 분포는 박막의 조성, 산화온도, 산화시간에 따라 변하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.239-239
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• 2003

As a result of the recent miniaturization and enhancement in the performance of thin film inductors and thin film transformers, there are increased demands for the thin films with a high magnetic permeability in the high frequency range, a high saturation magnetization, a high electrical resistivity, and a low coercive force. In order to improve high frequency properties, we will investigate anisotropy field by shape and size of pattern. The Fe-Al-O thin films of 16mm diameter and 1$\mu\textrm{m}$ thickness were deposited on Si wafer, using RE magnetron reactive sputtering technique with the mixture of argon and oxygen gases. The fabricating conditions are obtained in the working partial pressure of 2m Torr, O$_2$ partial Pressure of 5%, Input power of 400w, and Al pellets on an Fe disk with purity of 99.9%. For continuous thin film is the 4Ms of 19.4kG, H$\sub$c/ of 0.6Oe, H$\sub$k/ of 6.0Oe and effective permeability of 2500 up to 100MHz. In this work, we expect to enhanced effect of magnetic anisotropy on patterned of Fe-Al-O thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.177-181
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• 2011

We have studied structural, optical, and electrical properties of the Al-doped ZnO (AZO) thin films being usable in transparent conducting oxides. The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of AZO for transparent conducting oxides, the RF power in sputtering process was varied as 40 W, 60 W, and 80 W, respectively. As RF power increased, the crystallinity of AZO thin film was decreased, the optical bandgap of AZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in RF power. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with increasing RF power. The structural, optical, and electrical properties of the AZO thin films were affected by Al dopant content in AZO thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.319-320
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• 2009

In this study, high-quality Al-N doped p-type ZnO thin films were deposited on n-type Si (100) wafer or Si coated with buffer layer by DC magnetron sputtering in the mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin film showed higher carrier concentration $2.93\times10^{17}cm^{-3}$, lower resistivity of $5.349\;{\Omega}cm$ and mobility of $3.99\;cm^2V^{-1}S^{-1}$, respectively. According to PL spectrum, the Al donor energy level depth ($E_d$) of Al-N codoped p-type ZnO film was reduced to about 51 meV, and the N acceptor energy level depth ($E_a$) was reduced to 63 meV, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.815-819
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• 2014

Aluminum nitride (AlN) thin film and TiN film as a buffer layer were deposited on INCONEL 600 substrate by reactive RF magnetron sputtering at room temperature(R.T.) under 25~75% $N_2/Ar$ atmosphere. The as-deposited AlN films at 25~50% $N_2/Ar$ showed a polycrystalline phase of hexagonal AlN, and an amorphous phase. The peak of AlN (002) plane, which was determinant on a performance of piezoelectric transducer, became strong with increasing the $N_2/Ar$ ratio. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. The piezoelectric sensing properties of AlN module were performed using pressure-voltage measurement system. The output signal voltage of AlN module showed a linear behavior between 20~80 mV in 1~10 MPa range, and the pressure-sensing sensitivity was calculated as 3.6 mV/MPa.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.141-149
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• 1998

The W thin films were deposited on Si3N4 by a PECVD technique. The effects of substrate temperature and gas flow ratio on the properties of the W films were investigated. The deposition of W films were limited by surface reaction at the temperature range of 150>~$250^{\circ}C$, W films had the deposition rate of 150~530 $\AA$/min and stress of 0.85~$14.35\times10 ^9 \textrm {dynes/cm}^2}$ at various substrate temperatures and $SiH_4/WF_6$ flow ratios. $SiH_4/WF_6$ flow ratio affected the deposition rate and stress of the W films, expecially, excessive flow of SiH4 abruptly changed the structure, chemical bonding, and stress of the W films. Among the deposited W films on TiN, Ti, Mo, NiCr and Al adhesion layer, the one on the Al had the best adhesion property.

• Journal of the Korean institute of surface engineering
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• v.52 no.5
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• pp.246-250
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• 2019

Nano-multilayered $Cr_{25.2}Al_{19.5}Si_{4.7}N_{50.5}$ films were deposited on the steel substrate by cathodic arc plasma deposition. They were corroded at $900^{\circ}C$ in $Ar/1%SO_2$ gas in order to study their corrosion behavior in sulfidizing/oxidizing environments. Despite the presence of sulfur in the gaseous environment, the corrosion was governed by oxidation, leading to formation of protective oxides such as $Cr_2O_3$ and ${\alpha}-Al_2O_3$, where Si was dissolved. Iron diffused outward from the substrate to the film surface, and oxidized to $Fe_2O_3$ and $Fe_3O_4$. The films were corrosion-resistant up to 150 h owing to the formation of thin ($Cr_2O_3$ and/or ${\alpha}-Al_2O_3$)-rich oxide layers. However, they failed when corroded at $900^{\circ}C$ for 300 h, resulting in the formation of layered oxide scales due to not only outward diffusion of Cr, Al, Si, Fe and N, but also inward movement of sulfur and oxygen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.463-467
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• 2008

Aluminum nitride (AlN) thin films have been deposited on Au electrodes by using reactive RF magnetron sputtering method in a gas mixture of Ar and $N_2$ at different substrate temperature. It was found that substrate temperature was varied in the range up to $400^{\circ}C$, highly c-axis oriented film can be obtained at $300^{\circ}C$ with full width at half maximum (FWHM) $3.1^{\circ}$. Increase in surface roughness from 3.8 nm to 5.9 nm found to be associated with increase in grain size, with substrate temperature; however, the AlN film fabricated at $400^{\circ}C$ exhibited a granular type of structure with non-uniform grains. The Al 2p and N 1s peak in the X-ray photoelectron spectroscopy (XPS) spectrum confirmed the formation of Al-N bonds. The XPS spectrum also indicated the presence of oxynitrides and oxides, resulting from the presence of residual oxygen in the vacuum chamber. It is concluded that the AlN film deposited at substrate temperature of $300^{\circ}C$ exhibited the most desirable properties for the application of high-frequency surface acoustic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.13-16
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• 2009

In this study, AlN thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a pulsed reactive magnetron sputtering system. AFM, XRD and FT-IR were used to analyze structural properties and preferred orientation of the AlN/3C-SiC thin film. Suitability of the film in SAW applications was investigated by comparing the SAW characteristics of an interdigital transducer (IDT)/AlN/3C-SiC structure with the IDT/AIN/Si structure at 160 MHz in the temperature range $30-150^{\circ}C$. These experimental results showed that AlN films on the poly 3C-SiC layer were highly (002) oriented. Furthermore, the film showed improved temperature stability for the SAW device, $TCF\;=\;-18\;ppm//^{\circ}C$. The change in resonance frequency according to temperature was nearly linear. The insertion loss decrease was about $0.033dB/^{\circ}C$. However, some defects existed in the film, which caused a slight reduction in SAW velocity.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1236-1238
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• 1994

TiAlN thin films were prepared by a multi target r.f magnetron sputtering system under different conditions. We have investigated the resistivity and T.C.R. (Temperature Coefficient of Resistance) characteristics of TiAlN films deposited on $Al_2O_3$ and glass substrates by sputtering in an $Ar:N_2$ gas mixture. We used Al and Ti metal as Target Material and $Ar:N_2$ gas as working gas. We varied the partial pressure ratio of $N_2/Ar$ from 0.2/7 to 1.0/6.2 (SCCM). And the R.F power of Ti and Al Target also were varied as 160/240, 200/200 and 240/160(W). In this experiment, we can get the precision thin film resistor with a very low T.C.R. (Temperature Coefficient of Resistance) below 25 ppm ${\Omega}/^{\circ}C$.