Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Preparation of Precision Thin Film Resistor Sputtered by Magnetron Sputtering

IC용 초정밀 박막저항소자의 제조와 특성연구

  • Ha, H.J. (Dep. of Electrical Engineering Pusan National University) ;
  • Jang, D.J. (Dep. of Electrical Engineering Pusan National University) ;
  • Moon, S.R. (Dep. of Electrical Engineering Pusan National University) ;
  • Park, C.S. (KEPCO) ;
  • Cho, J.S. (Dep. of Electrical Engineering Pusan National University) ;
  • Park, C.H. (Dep. of Electrical Engineering Pusan National University)
  • 하흥주 (부산대학교 공과대학 전기공학과) ;
  • 장두진 (부산대학교 공과대학 전기공학과) ;
  • 문상용 (부산대학교 공과대학 전기공학과) ;
  • 박차수 (한국전력공사) ;
  • 조정수 (부산대학교 공과대학 전기공학과) ;
  • 박정후 (부산대학교 공과대학 전기공학과)
  • Published : 1994.07.21
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Abstract

TiAlN thin films were prepared by a multi target r.f magnetron sputtering system under different conditions. We have investigated the resistivity and T.C.R. (Temperature Coefficient of Resistance) characteristics of TiAlN films deposited on $Al_2O_3$ and glass substrates by sputtering in an $Ar:N_2$ gas mixture. We used Al and Ti metal as Target Material and $Ar:N_2$ gas as working gas. We varied the partial pressure ratio of $N_2/Ar$ from 0.2/7 to 1.0/6.2 (SCCM). And the R.F power of Ti and Al Target also were varied as 160/240, 200/200 and 240/160(W). In this experiment, we can get the precision thin film resistor with a very low T.C.R. (Temperature Coefficient of Resistance) below 25 ppm ${\Omega}/^{\circ}C$.

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