• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.2
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• pp.68-71
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• 2008

AlN crystals were grown by the sublimation process. As grown AlN crystals were the polycrystalline boule in the form of the agglomerate of small AlN single crystalline AlN. As-grown AlN boule has a length about 2${\sim}$3 mm long and a diameter of 1 inch. The carbon impurities were observed on the surface and inside of the grown AlN crystals and the growth behavior was investigated by optical microscopy and SEM observation.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.658-659
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• 2006

Magnetron sputtered TiN, (Ti, Al)N and TiN/(Ti, Al)N multilayer coatings grown on cemented carbide substrates have been characterized by using electron probe microanalysis (EPMA), X-ray diffraction (XRD), scanning electron spectroscopy (SEM), nanoindentation, scratcher and cutting tests. Results show that TiN coating is bell mouth columnar structures, (Ti, Al)N coating is straight columnar structures and the modulation structure has been formed in the TiN/(Ti, Al)N multilayer coating. TiN/(Ti, Al)N multilayer coating exhibited higher hardness, better adhesion with substrate and excellent cutting performance compared with TiN and (Ti, Al)N coating.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.138-143
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• 2015

Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with $N_2$, NH3 and Ar. According to an increase in the partial pressures of $N_2$ and $NH_3$, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with $N_2$, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with $NH_3$, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, $NH_3$ pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high a-axis and c-axis orientations.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.207-215
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• 1997

Aluminum (Al) thin films were deposited on the Si(100) and TiN(60 nm)/Si (100) substrate by the ionized cluster beam deposition (ICBD) method. The characteristics of thin films were examined by the $\alpha$-step, four-point-probe, Scanning Electron Spectroscopy (SEM), Auger Electron Spectroscopy (AES). The growth rate of the Al thin film increased and the resistivity decreased as the crucible temperature increased. At the crucible temperature $1800^{\circ}C$, the microstructure of Al thin film deposited was smooth and continuous the resistivity decreased as the acceleration voltage increased. Also, the minimum resistivity in Si(100) substrate and TiN(60 nm)/Si(100) substrate were 3.4 $\mu \Omega \textrm {cm}$, 3.6 $\mu \Omega \textrm {cm}$ at the acceleration voltage 4 kV and 2 kV respectively. From the AES spectrumt 14 wasn't detected any impurities In the Al thin film. Therefore the resistivity of Al thin film was affected by the microstructure of film.

• Korean Journal of Metals and Materials
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• v.50 no.1
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• pp.78-85
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• 2012

Aluminum nitride(AlN) is a compound (III-V group) of hexagonal system with a crystal structure. Its Wurzite phase is a very wide band gap semiconductor material. It has not only a high thermal conductivity, a high electrical resistance, a high electrical insulating constant, a high breakdown voltage and an excellent mechanical strength but also stable thermal and chemical characteristics. This study is on the preferred orientation characteristics of AlN thin films by reactive evaporation using $NH_3$. We have manufactured an AlN thin film and then have checked the crystal structure and the preferred orientation by using an X-ray diffractometer and have also observed the microstructure with TEM and AlN chemical structure with FT-IR. We can manufacture an excellent AlN thin film by reactive evaporation using $NH_3$ under 873 K of substrate temperature. The AlN thin film growth is dependent on Al supplying and $NH_3$ has been found to be effective as a source of $N_2$. However, the nuclear structure of AlN did not occur randomly around the substrate a particle of the a-axis orientation in fast growth speed becomes an earlier crystal structure and is shown to have an a-axis preferred orientation. Therefore, reactive evaporation using $NH_3$ is not affected by provided $H_2$ amount and this can be an easy a-axis orientation method.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.153-157
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• 1999

The dependence of the absorption edge of wurtzite $Al_xGa_{1-x}N$ on alN mole fraction has been studied. The AlN mole fraction was varied from 0 to 1. The absorption coefficients at room temperature were determined by transmission and photothermal deflection spectroscopy. Photothermal deflection spectroscopy can be applied to determine the low absorbance values. From the results, the effective bandgaps of $Al_xGa_{1-x}N$ alloys were determined by choosing corresponding photon energies of the positions of the absorption coefficient of $6.3\times10^4\textrm{cm}^{-1}$ at the absorption curves of the $Al_xGa_{1-x}N$ alloys. From the energy position of the absorption coefficient versus AlN mole fraction, a bowing parameter of 1.3eV was determined. The bowing parameter agreed quite well with the measured effective bandgaps of AlGaN alloys.

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.10-10
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• 1995

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.05a
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• pp.38.2-38.2
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• 2008

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.116-117
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• 2006

I-D ZnO nanostructures were fabricated by thermal evaporation method on Si(100), GaN and $Al_2O_3$ substrates without a catalyst at the reaction temperature of $700^{\circ}C$. Only pure Zn powder was used as a source material and Ar was used as a carrier gas. The shape and growth direction of synthesized ZnO nanostructures is determined by the crystal structure and the lattice mismatch between ZnO and substrates. The ZnO nanostructure on Si substrate were inclined regardless of their substrate orientation. The origin of ZnO/Si interface is highly lattice-mismatched and the surface of the Si substrate inevitably has the $SiO_2$ layer. The ZnO nanostructure on the $Al_2O_3$ substrate was synthesized into the rod shape and grown into particular direction. For the GaN substrate, however, ZnO nanostructure with the honeycomb-like shape was vertically grown, owing to the similar lattice parameter with GaN substrate.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.170-170
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• 2003

We have implanted on sapphire substrate with various ions and investigated the properties of GaN epilayers grown on implanted sapphire substrate by metal organic chemical vapor deposition (MOCVD). Sapphire is typical substrate for GaN epilayers. However, there are many problems such as lattice mismatch and thermal coefficient difference between sapphire substrate and GaN. The ion implanted substrate's surface had decreased internal tree energies during the growth of the GaN epilayer, md the misfit strain was relieved through the formation of an AlN phase on the ions implanted sapphire(0001) substrates. [1] The crystal and optical properties of GaN epilayer grown in ions implanted sapphire(0001) substrate were improved.