Browse > Article

Growth of AlN crystals by the sublimation process  

Kang, Seung-Min (Department of Advanced Materials Science and Engineering, Hanseo University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.18, no.2, 2008 , pp. 68-71 More about this Journal
Abstract
AlN crystals were grown by the sublimation process. As grown AlN crystals were the polycrystalline boule in the form of the agglomerate of small AlN single crystalline AlN. As-grown AlN boule has a length about 2${\sim}$3 mm long and a diameter of 1 inch. The carbon impurities were observed on the surface and inside of the grown AlN crystals and the growth behavior was investigated by optical microscopy and SEM observation.
Keywords
AlN; Growth; Single crystal; Sublimation process; Substrate;
Citations & Related Records
연도 인용수 순위
  • Reference
1 M. Bickermann, B.M. Epelbaum and A. Winnacker, "PVT growth of bulk AlN crystals with low oxygen contamination", Phys. Stat. Sol. (c) 0 (2003) 1993   DOI   ScienceOn
2 B.M. Epelbaum, C. Seitz, A. Magerl, M. Bickermann and A. Winnacker, "Characterization of bulk AlN with low oxygen content", J. of Crystal Growth 265 (2004) 577   DOI   ScienceOn
3 B. Liu, J.H. Edgar, Z. Gu, D. Zhuang, B. Raghothamachar, M. Dudley, A. Sarua, Martin Kuball and H.M. Meyer III, "The durability of various crucible materials for aluminum nitride crystal growth by sublimation", MRS Internet J. Nitride Semicond. Res. 9 (2004) 6   DOI
4 M. Bickermann, B.M. Epelbaum and A. Winnacker, "Characterization of bulk AlN with low oxygen content", J. of Crystal Growth 269 (2004) 432   DOI   ScienceOn
5 G.A. Slack and T.F. McNelly, "AlN single crystals", J. of Crystal Growth 42 (1977) 560   DOI   ScienceOn
6 G.A. Slack and T.F. McNelly, "Growth of high purity AlN crystals", J. of Crystal Growth 34 (1976) 263   DOI   ScienceOn
7 Y. Shi, B. Liu, Lianghong Liu, J.H. Edgar, E.A. Payzant, J. M. Hayes and M. Kuball, "New technique for sublimation growth of AlN single crystals", MRS Internet J. Nitride Semicond. Res. 6 (2001) 5   DOI